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Results: 1-25/51
Authors:
CAMPBELL GH
FOILES SM
HUANG HC
HUGHES DA
KING WE
LASSILA DH
NIKKEL DJ
DELARUBIA TD
SHU JY
SMYSHLYAEV VP
Citation: Gh. Campbell et al., MULTISCALE MODELING OF POLYCRYSTAL PLASTICITY - A WORKSHOP REPORT, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 251(1-2), 1998, pp. 1-22
Authors:
WEBER WJ
EWING RC
CATLOW CRA
DELARUBIA TD
HOBBS LW
KINOSHITA C
MATZKE H
MOTTA AT
NASTASI M
SALJE EKH
VANCE ER
ZINKLE SJ
Citation: Wj. Weber et al., RADIATION EFFECTS IN CRYSTALLINE CERAMICS FOR THE IMMOBILIZATION OF HIGH-LEVEL NUCLEAR WASTE AND PLUTONIUM, Journal of materials research, 13(6), 1998, pp. 1434-1484
Authors:
BEDROSSIAN PJ
DELARUBIA TD
Citation: Pj. Bedrossian et Td. Delarubia, SURFACE SEGREGATION OF LOW-ENERGY ION-INDUCED DEFECTS IN SI, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1043-1046
Authors:
BONGIORNO A
COLOMBO L
DELARUBIA TD
Citation: A. Bongiorno et al., STRUCTURAL AND BINDING-PROPERTIES OF VACANCY CLUSTERS IN SILICON, Europhysics letters, 43(6), 1998, pp. 695-700
Authors:
DEVANATHAN R
WEBER WJ
DELARUBIA TD
Citation: R. Devanathan et al., COMPUTER-SIMULATION OF A 10 KEV SI DISPLACEMENT CASCADE IN SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 118-122
Authors:
NORDLUND K
GHALY M
AVERBACK RS
CATURLA M
DELARUBIA TD
TARUS J
Citation: K. Nordlund et al., DEFECT PRODUCTION IN COLLISION CASCADES IN ELEMENTAL SEMICONDUCTORS AND FCC METALS, Physical review. B, Condensed matter, 57(13), 1998, pp. 7556-7570
Authors:
SUGIO K
SHIMOMURA Y
DELARUBIA TD
Citation: K. Sugio et al., COMPUTER-SIMULATION OF DISPLACEMENT DAMAGE CASCADE FORMATION NEAR SIGMA-5 TWIST BOUNDARY IN SILVER, Journal of the Physical Society of Japan, 67(3), 1998, pp. 882-889
Authors:
DEVANATHAN R
DELARUBIA TD
WEBER WJ
Citation: R. Devanathan et al., DISPLACEMENT THRESHOLD ENERGIES IN BETA-SIC, Journal of nuclear materials, 253, 1998, pp. 47-52
Authors:
HUANG HC
GILMER GH
DELARUBIA TD
Citation: Hc. Huang et al., AN ATOMISTIC SIMULATOR FOR THIN-FILM DEPOSITION IN 3 DIMENSIONS, Journal of applied physics, 84(7), 1998, pp. 3636-3649
Authors:
JOHNSON MD
CATURLA MJ
DELARUBIA TD
Citation: Md. Johnson et al., A KINETIC MONTE-CARLO STUDY OF THE EFFECTIVE DIFFUSIVITY OF THE SILICON SELF-INTERSTITIAL IN THE PRESENCE OF CARBON AND BORON, Journal of applied physics, 84(4), 1998, pp. 1963-1967
Authors:
CATURLA MJ
JOHNSON MD
DELARUBIA TD
Citation: Mj. Caturla et al., THE FRACTION OF SUBSTITUTIONAL BORON IN SILICON DURING ION-IMPLANTATION AND THERMAL ANNEALING, Applied physics letters, 72(21), 1998, pp. 2736-2738
Authors:
PANKRATOV O
HUANG HC
DELARUBIA TD
MAILHIOT C
Citation: O. Pankratov et al., AS-VACANCY INTERACTION AND RING MECHANISM OF DIFFUSION IN SI, Physical review. B, Condensed matter, 56(20), 1997, pp. 13172-13176
Authors:
TANG MJ
COLOMBO L
ZHU J
DELARUBIA TD
Citation: Mj. Tang et al., INTRINSIC POINT-DEFECTS IN CRYSTALLINE SILICON - TIGHT-BINDING MOLECULAR-DYNAMICS STUDIES OF SELF-DIFFUSION, INTERSTITIAL-VACANCY RECOMBINATION, AND FORMATION VOLUMES, Physical review. B, Condensed matter, 55(21), 1997, pp. 14279-14289
Authors:
ALMAZOUZI A
VICTORIA M
SINGH BN
DELARUBIA TD
Citation: A. Almazouzi et al., PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON DEFECT PRODUCTION, ACCUMULATION AND MATERIALS PERFORMANCE IN AN IRRADIATION ENVIRONMENT - DAVOS, SWITZERLAND - OCTOBER 2-8, 1996 - PREFACE, Journal of nuclear materials, 251, 1997, pp. 7-7
Authors:
DELARUBIA TD
SONEDA N
CATURLA MJ
ALONSO EA
Citation: Td. Delarubia et al., DEFECT PRODUCTION AND ANNEALING KINETICS IN ELEMENTAL METALS AND SEMICONDUCTORS, Journal of nuclear materials, 251, 1997, pp. 13-33
Authors:
ALMAZOUZI A
DELARUBIA TD
ISHINO S
LAM NQ
SINGH BN
TRINKAUS H
VICTORIA M
ZINKLE S
Citation: A. Almazouzi et al., DEFECT PRODUCTION, ACCUMULATION, AND MATERIALS PERFORMANCE IN AN IRRADIATION ENVIRONMENT, Journal of nuclear materials, 251, 1997, pp. 291-294
Authors:
MORISHITA K
SEKIMURA N
DELARUBIA TD
Citation: K. Morishita et al., A MOLECULAR-DYNAMICS STUDY FOR ULTRAFAST PROCESS OF RADIATION-DAMAGE IN MATERIALS, Journal of nuclear materials, 248, 1997, pp. 400-404
Authors:
CHASON E
PICRAUX ST
POATE JM
BORLAND JO
CURRENT MI
DELARUBIA TD
EAGLESHAM DJ
HOLLAND OW
LAW ME
MAGEE CW
MAYER JW
MELNGAILIS J
TASCH AF
Citation: E. Chason et al., ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION, Journal of applied physics, 81(10), 1997, pp. 6513-6561
Authors:
BEDROSSIAN PJ
CATURLA MJ
DELARUBIA TD
Citation: Pj. Bedrossian et al., DAMAGE EVOLUTION AND SURFACE DEFECT SEGREGATION IN LOW-ENERGY ION-IMPLANTED SILICON, Applied physics letters, 70(2), 1997, pp. 176-178
Authors:
COLOMBO L
TANG M
DELARUBIA TD
CARGNONI F
Citation: L. Colombo et al., STRUCTURE, ENERGETICS, CLUSTERING AND MIGRATION OF POINT-DEFECTS IN SILICON, Physica scripta. T, T66, 1996, pp. 207-211
Authors:
DELARUBIA TD
Citation: Td. Delarubia, DEFECT PRODUCTION MECHANISMS IN METALS AND COVALENT SEMICONDUCTORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 19-26
Authors:
ZHU J
DELARUBIA TD
YANG LH
MAILHIOT C
GILMER GH
Citation: J. Zhu et al., AB-INITIO PSEUDOPOTENTIAL CALCULATIONS OF B DIFFUSION AND PAIRING IN SI, Physical review. B, Condensed matter, 54(7), 1996, pp. 4741-4747
Authors:
CATURLA MJ
DELARUBIA TD
MARQUES LA
GILMER GH
Citation: Mj. Caturla et al., ION-BEAM PROCESSING OF SILICON AT KEV ENERGIES - A MOLECULAR-DYNAMICSSTUDY, Physical review. B, Condensed matter, 54(23), 1996, pp. 16683-16695
Authors:
DELARUBIA TD
Citation: Td. Delarubia, IRRADIATION-INDUCED DEFECT PRODUCTION IN ELEMENTAL METALS AND SEMICONDUCTORS - A REVIEW OF RECENT MOLECULAR-DYNAMICS STUDIES, Annual review of materials science, 26, 1996, pp. 613-649
Authors:
DELARUBIA TD
PERLADO JM
TOBIN M
Citation: Td. Delarubia et al., RADIATION EFFECTS IN SILICON-CARBIDE - HIGH-ENERGY CASCADES AND DAMAGE ACCUMULATION AT HIGH-TEMPERATURE, Journal of nuclear materials, 237, 1996, pp. 1096-1101