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Results:
1-7
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Results: 7
Authors:
PAILLARD V
PUECH P
LAGUNA MA
TEMPLEBOYER P
CAUSSAT B
COUDERC JP
DEMAUDUIT B
Citation: V. Paillard et al., RESONANT RAMAN-SCATTERING IN POLYCRYSTALLINE SILICON THIN-FILMS, Applied physics letters, 73(12), 1998, pp. 1718-1720
Authors:
BONAFOS C
OMRI M
DEMAUDUIT B
BENASSAYAG G
CLAVERIE A
ALQUIER D
MARTINEZ A
MATHIOT D
Citation: C. Bonafos et al., TRANSIENT ENHANCED DIFFUSION OF BORON IN PRESENCE OF END-OF-RANGE DEFECTS, Journal of applied physics, 82(6), 1997, pp. 2855-2861
Authors:
CRISTIANO F
NEJIM A
DEMAUDUIT B
CLAVERIE A
HEMMENT PLF
Citation: F. Cristiano et al., CHARACTERIZATION OF EXTENDED DEFECTS IN SIGE ALLOYS FORMED BY HIGH-DOSE GE+ IMPLANTATION INTO SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 156-160
Authors:
DEMAUDUIT B
LAANAB L
BERGAUD C
FAYE MM
MARTINEZ A
CLAVERIE A
Citation: B. Demauduit et al., IDENTIFICATION OF EOR DEFECTS DUE TO THE REGROWTH OF AMORPHOUS LAYERSCREATED BY ION-BOMBARDMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 190-194
Authors:
BANDET J
FRANDON J
FABRE F
DEMAUDUIT B
Citation: J. Bandet et al., SELECTIVELY DISORDER ACTIVATED RAMAN-SCATTERING IN SILICON FILMS, JPN J A P 1, 32(4), 1993, pp. 1518-1522
Authors:
GUILLEMET JP
DEMAUDUIT B
PIERAGGI B
BIELLEDASPET D
SCHEID E
Citation: Jp. Guillemet et al., CRYSTALLIZATION OF AMORPHOUS THIN LPCVD SI FILMS - IN-SITU TEM MEASUREMENT OF NUCLEATION AND GRAIN-GROWTH RATES, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 173(1-2), 1993, pp. 377-380
Authors:
GUILLEMET JP
DEMAUDUIT B
PIERAGGI B
CAMPO E
SCHEID E
Citation: Jp. Guillemet et al., CRYSTALLIZATION OF AMORPHOUS THIN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION SILICON FILMS - IN-SITU TEM MEASUREMENT OF GRAIN-GROWTH RATES, Journal of materials science letters, 12(12), 1993, pp. 910-912
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1-7
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