Authors: KHAN MA CHEN Q SHUR MS DERMOTT BT HIGGINS JA BURM J SCHAFF WJ EASTMAN LF

Citation: Ma. Khan et al., GAN BASED HETEROSTRUCTURE FOR HIGH-POWER DEVICES, Solid-state electronics, 41(10), 1997, pp. 1555-1559

Authors: KHAN MA CHEN Q YANG JW SHUR MS DERMOTT BT HIGGINS JA

Citation: Ma. Khan et al., MICROWAVE OPERATION OF GAN ALGAN-DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, IEEE electron device letters, 17(7), 1996, pp. 325-327

Authors: KHAN MA CHEN Q SHUR MS DERMOTT BT HIGGINS JA BURM J SCHAFF WJ EASTMAN LF

Citation: Ma. Khan et al., CW OPERATION OF SHORT-CHANNEL GAN ALGAN DOPED CHANNEL HETEROSTRUCTUREFIELD-EFFECT TRANSISTORS AT 10 GHZ AND 15 GHZ/, IEEE electron device letters, 17(12), 1996, pp. 584-585

Authors: KHAN MA CHEN Q SHUR MS DERMOTT BT HIGGINS JA BURM J SCHAFF W EASTMAN LF

Citation: Ma. Khan et al., SHORT-CHANNEL GAN ALGAN DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH 36.1 CUTOFF FREQUENCY/, Electronics Letters, 32(4), 1996, pp. 357-358