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Results: 1-12 |
Results: 12
THE LOCAL ORDER OF AS SITES IN INCREASINGLY AMORPHOUS SI
Authors: DENT AJ DERST G GREAVES GN KALBITZER S KLATT C
Citation: Aj. Dent et al., THE LOCAL ORDER OF AS SITES IN INCREASINGLY AMORPHOUS SI, Journal de physique. IV, 7(C2), 1997, pp. 1207-1208
STUDYING THE ENVIRONMENTS OF ION-IMPLANTED ARSENIC DEFECTS IN AMORPHOUS AND RECRYSTALLIZED SILICON WITH IMPURITY EXAFS
Authors: GREAVES GN DENT AJ DERST G KALBITZER S MULLER G
Citation: Gn. Greaves et al., STUDYING THE ENVIRONMENTS OF ION-IMPLANTED ARSENIC DEFECTS IN AMORPHOUS AND RECRYSTALLIZED SILICON WITH IMPURITY EXAFS, Berichte der Bunsengesellschaft fur Physikalische Chemie, 101(9), 1997, pp. 1258-1264
DOPANT DEFECT INTERACTIONS IN HYDROGEN-FREE AMORPHOUS-SILICON
Authors: MULLER G HELLMICH W KROTZ G KALBITZER S GREAVES GN DERST G DENT AJ DOBSON BR
Citation: G. Muller et al., DOPANT DEFECT INTERACTIONS IN HYDROGEN-FREE AMORPHOUS-SILICON, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(2), 1996, pp. 245-259
OPTICAL-ABSORPTION AND ELECTRONIC TRANSPORT IN ION-IMPLANTATION-DOPEDPOLYCRYSTALLINE SIC FILMS
Authors: HELLMICH W MULLER G KROTZ G DERST G KALBITZER S
Citation: W. Hellmich et al., OPTICAL-ABSORPTION AND ELECTRONIC TRANSPORT IN ION-IMPLANTATION-DOPEDPOLYCRYSTALLINE SIC FILMS, Applied physics A: Materials science & processing, 61(2), 1995, pp. 193-201
ELECTRONIC TRANSPORT IN THERMALLY CRYSTALLIZED SIC FILMS ON SAPPHIRE
Authors: HELLMICH W MULLER G KROTZ G DERST G KALBITZER S
Citation: W. Hellmich et al., ELECTRONIC TRANSPORT IN THERMALLY CRYSTALLIZED SIC FILMS ON SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 147-150
TRACING THE CHANGING ENVIRONMENT OF LATTICE SITES IN THE RECRYSTALLIZATION OF AMORPHISED SILICON
Authors: DENT AJ GREAVES GN DERST G KALBITZER S MULLER G
Citation: Aj. Dent et al., TRACING THE CHANGING ENVIRONMENT OF LATTICE SITES IN THE RECRYSTALLIZATION OF AMORPHISED SILICON, Physica. B, Condensed matter, 209(1-4), 1995, pp. 503-505
THE ENVIRONMENT OF LATTICE SITES DURING THERMAL EPITAXIAL REGROWTH OFION-BEAM AMORPHIZED SILICON
Authors: KALBITZER S GREAVES GN DENT AJ DERST G MULLER G
Citation: S. Kalbitzer et al., THE ENVIRONMENT OF LATTICE SITES DURING THERMAL EPITAXIAL REGROWTH OFION-BEAM AMORPHIZED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 97(1-4), 1995, pp. 312-315
SILICON-OXIDE STRUCTURES MEASURED AT THE SURFACES OF SILICON AND SILICATE GLASS - A REFLECTIVITY STUDY
Authors: VANDORSSEN GE DERST G GREAVES GN SMITH AD ROPER M
Citation: Ge. Vandorssen et al., SILICON-OXIDE STRUCTURES MEASURED AT THE SURFACES OF SILICON AND SILICATE GLASS - A REFLECTIVITY STUDY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 97(1-4), 1995, pp. 426-429
EFFECT OF ION-BEAM-INDUCED DISORDER ON OPTICAL INTERBAND-TRANSITIONS IN SI AND GAAS
Authors: BHATIA KL WILBERTZ C DERST G KALBITZER S
Citation: Kl. Bhatia et al., EFFECT OF ION-BEAM-INDUCED DISORDER ON OPTICAL INTERBAND-TRANSITIONS IN SI AND GAAS, Radiation effects and defects in solids, 128(4), 1994, pp. 341-355
THIN-FILM SIC AS AN OPTICAL AND OPTOELECTRONIC MATERIAL
Authors: KROTZ G MULLER G DERST G WILBERTZ C KALBITZER S
Citation: G. Krotz et al., THIN-FILM SIC AS AN OPTICAL AND OPTOELECTRONIC MATERIAL, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 917-921
INFLUENCE OF AL AND P DOPING ON OPTICAL AND ELECTRICAL-PROPERTIES OF ION-BEAM SYNTHESIZED SIC
Authors: BATTAGLIA A DERST G KALBITZER S
Citation: A. Battaglia et al., INFLUENCE OF AL AND P DOPING ON OPTICAL AND ELECTRICAL-PROPERTIES OF ION-BEAM SYNTHESIZED SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 915-918
ION-IMPLANTATION DOPING OF POLYCRYSTALLINE SIC THIN-FILMS PREPARED BYPECVD
Authors: KROTZ G HELLMICH W MULLER G DERST G KALBITZER S
Citation: G. Krotz et al., ION-IMPLANTATION DOPING OF POLYCRYSTALLINE SIC THIN-FILMS PREPARED BYPECVD, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 927-930
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