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Results:
1-7
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Results: 7
Authors:
SCHMIDT DC
BARBOT JF
BLANCHARD C
DESGARDIN P
NTSOENZOK E
BLONDIAUX G
Citation: Dc. Schmidt et al., STUDIES OF DEEP LEVELS IN HE-IRRADIATED SILICON(), Applied physics A: Materials science & processing, 65(4-5), 1997, pp. 403-406
Authors:
DESGARDIN P
HENRY L
NTSOENZOK E
BLONDIAUX G
BARBOT JF
BLANCHARD C
Citation: P. Desgardin et al., THE EFFECT OF PARTICLE-FLUENCE AND FLUX IN ALPHA-IRRADIATED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 59-62
Authors:
KAUPPINEN H
CORBEL C
SKOG K
SAARINEN K
LAINE T
HAUTOJARVI P
DESGARDIN P
NTSOENZOK E
Citation: H. Kauppinen et al., DIVACANCY AND RESISTIVITY PROFILES IN N-TYPE SI IMPLANTED WITH 1.15-MEV PROTONS, Physical review. B, Condensed matter, 55(15), 1997, pp. 9598-9608
Authors:
NTSOENZOK E
DESGARDIN P
BARBOT JF
VERNOIS J
ISABELLE DB
Citation: E. Ntsoenzok et al., COMPARISON OF N-TYPE AND P-TYPE SILICON IRRADIATED BY MEV PROTONS ANDPOSTANNEALED AT DIFFERENT TEMPERATURES, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 154-157
Authors:
DESGARDIN P
NTSOENZOK E
BARBOT JF
BRIAUD J
VERNOIS J
ISABELLE DB
Citation: P. Desgardin et al., BEAM SCANNING SYSTEM FOR THE UNIFORMITY OF IMPLANTED DOSES IN A LARGE-AREA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 267-269
Authors:
NTSOENZOK E
DESGARDIN P
SAILLARD M
VERNOIS J
BARBOT JF
Citation: E. Ntsoenzok et al., EVOLUTION OF SHALLOW DONORS WITH PROTON FLUENCE IN N-TYPE SILICON, Journal of applied physics, 79(11), 1996, pp. 8274-8277
Authors:
NTSOENZOK E
BARBOT JF
DESGARDIN P
VERNOIS J
BLANCHARD C
ISABELLE DB
Citation: E. Ntsoenzok et al., STUDY OF THE DEFECTS INDUCED IN N-TYPE SILICON IRRADIATED BY 1-3-MEV PROTONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1932-1936
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1-7
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