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Results: 1-21 |
Results: 21
ABSORPTION-COEFFICIENT OF 4H SILICON-CARBIDE FROM 3900 TO 3250 ANGSTROM
Authors: SRIDHARA SG DEVATY RP CHOYKE WJ
Citation: Sg. Sridhara et al., ABSORPTION-COEFFICIENT OF 4H SILICON-CARBIDE FROM 3900 TO 3250 ANGSTROM, Journal of applied physics, 84(5), 1998, pp. 2963-2964
MEASUREMENT OF THE HALL SCATTERING FACTOR IN 4H AND 6H SIC EPILAYERS FROM 40 TO 290 K AND IN MAGNETIC-FIELDS UP TO 9 T
Authors: RUTSCH G DEVATY RP CHOYKE WJ LANGER DW ROWLAND LB
Citation: G. Rutsch et al., MEASUREMENT OF THE HALL SCATTERING FACTOR IN 4H AND 6H SIC EPILAYERS FROM 40 TO 290 K AND IN MAGNETIC-FIELDS UP TO 9 T, Journal of applied physics, 84(4), 1998, pp. 2062-2064
PHOTOLUMINESCENCE AND TRANSPORT STUDIES OF BORON IN 4H SIC
Authors: SRIDHARA SG CLEMEN LL DEVATY RP CHOYKE WJ LARKIN DJ KONG HS TROFFER T PENSL G
Citation: Sg. Sridhara et al., PHOTOLUMINESCENCE AND TRANSPORT STUDIES OF BORON IN 4H SIC, Journal of applied physics, 83(12), 1998, pp. 7909-7919
PROGRESS IN THE STUDY OF OPTICAL AND RELATED PROPERTIES OF SIC SINCE 1992
Authors: CHOYKE WJ DEVATY RP
Citation: Wj. Choyke et Rp. Devaty, PROGRESS IN THE STUDY OF OPTICAL AND RELATED PROPERTIES OF SIC SINCE 1992, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1243-1248
RADIATION-INDUCED DEFECT CENTERS IN 4H SILICON-CARBIDE
Authors: DALIBOR T PENSL G KIMOTO T MATSUNAMI H SRIDHARA S DEVATY RP CHOYKE WJ
Citation: T. Dalibor et al., RADIATION-INDUCED DEFECT CENTERS IN 4H SILICON-CARBIDE, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1333-1337
OPTICAL CHARACTERIZATION OF SILICON-CARBIDE POLYTYPES
Authors: DEVATY RP CHOYKE WJ
Citation: Rp. Devaty et Wj. Choyke, OPTICAL CHARACTERIZATION OF SILICON-CARBIDE POLYTYPES, Physica status solidi. a, Applied research, 162(1), 1997, pp. 5-38
EFFECT OF ANNEALING TEMPERATURE ON 1.5 MU-M PHOTOLUMINESCENCE FROM ER-IMPLANTED 6H-SIC
Authors: STECKL AJ DEVRAJAN J CHOYKE WJ DEVATY RP YOGANATHAN M NOVAK SW
Citation: Aj. Steckl et al., EFFECT OF ANNEALING TEMPERATURE ON 1.5 MU-M PHOTOLUMINESCENCE FROM ER-IMPLANTED 6H-SIC, Journal of electronic materials, 25(5), 1996, pp. 869-873
INFRARED REFLECTANCE OF ALN-GAN SHORT-PERIOD SUPERLATTICE FILMS
Authors: MACMILLAN MF DEVATY RP CHOYKE WJ KHAN MA KUZNIA J
Citation: Mf. Macmillan et al., INFRARED REFLECTANCE OF ALN-GAN SHORT-PERIOD SUPERLATTICE FILMS, Journal of applied physics, 80(4), 1996, pp. 2372-2377
CATHODOLUMINESCENCE OF ALN-GAN SHORT-PERIOD SUPERLATTICES
Authors: MACMILLAN MF CLEMEN LL DEVATY RP CHOYKE WJ KHAN MA KUZNIA JN KRISHNANKUTTY S
Citation: Mf. Macmillan et al., CATHODOLUMINESCENCE OF ALN-GAN SHORT-PERIOD SUPERLATTICES, Journal of applied physics, 80(4), 1996, pp. 2378-2382
INFRARED REFLECTANCE OF THICK P-TYPE POROUS SIC LAYERS
Authors: MACMILLAN MF DEVATY RP CHOYKE WJ GOLDSTEIN DR SPANIER JE KURTZ AD
Citation: Mf. Macmillan et al., INFRARED REFLECTANCE OF THICK P-TYPE POROUS SIC LAYERS, Journal of applied physics, 80(4), 1996, pp. 2412-2419
FREE TO BOUND TRANSITION-RELATED ELECTROLUMINESCENCE IN 3C AND 6H SICP(-N JUNCTIONS AT ROOM-TEMPERATURE())
Authors: YOGANATHAN M CHOYKE WJ DEVATY RP NEUDECK PG
Citation: M. Yoganathan et al., FREE TO BOUND TRANSITION-RELATED ELECTROLUMINESCENCE IN 3C AND 6H SICP(-N JUNCTIONS AT ROOM-TEMPERATURE()), Journal of applied physics, 80(3), 1996, pp. 1763-1767
HYDROGEN INCORPORATION IN BORON-DOPED 6H-SIC CVD EPILAYERS PRODUCED USING SITE-COMPETITION EPITAXY
Authors: LARKIN DJ SRIDHARA SG DEVATY RP CHOYKE WJ
Citation: Dj. Larkin et al., HYDROGEN INCORPORATION IN BORON-DOPED 6H-SIC CVD EPILAYERS PRODUCED USING SITE-COMPETITION EPITAXY, Journal of electronic materials, 24(4), 1995, pp. 289-294
NITROGEN DONORS AND DEEP LEVELS IN HIGH-QUALITY 4H-SIC EPILAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION
Authors: KIMOTO T ITOH A MATSUNAMI H SRIDHARA S CLEMEN LL DEVATY RP CHOYKE WJ DALIBOR T PEPPERMULLER C PENSL G
Citation: T. Kimoto et al., NITROGEN DONORS AND DEEP LEVELS IN HIGH-QUALITY 4H-SIC EPILAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 67(19), 1995, pp. 2833-2835
CALCULATED AND MEASURED UV REFLECTIVITY OF SIC POLYTYPES
Authors: LAMBRECHT WRL SEGALL B YOGANATHAN M SUTTROP W DEVATY RP CHOYKE WJ
Citation: Wrl. Lambrecht et al., CALCULATED AND MEASURED UV REFLECTIVITY OF SIC POLYTYPES, Physical review. B, Condensed matter, 50(15), 1994, pp. 10722-10726
CALCULATED AND MEASURED UV REFLECTIVITY OF SIC POLYTYPES
Authors: LAMBRECHT WRL SEGALL B YOGANATHAN M SUTTROP W DEVATY RP CHOYKE WJ
Citation: Wrl. Lambrecht et al., CALCULATED AND MEASURED UV REFLECTIVITY OF SIC POLYTYPES, Physical review. B, Condensed matter, 50(15), 1994, pp. 10722-10726
IDENTIFICATION OF (2110) AND (1010) LAUE PATTERNS OF HEXAGONAL AND RHOMBOHEDRAL SILICON-CARBIDE POLYTYPES
Authors: YOGANATHAN M SUTTROP W DEVATY RP CHOYKE WJ
Citation: M. Yoganathan et al., IDENTIFICATION OF (2110) AND (1010) LAUE PATTERNS OF HEXAGONAL AND RHOMBOHEDRAL SILICON-CARBIDE POLYTYPES, Journal of applied crystallography, 27, 1994, pp. 497-503
ANISOTROPY OF THE ELECTRON HALL-MOBILITY IN 4H, 6H, AND 15R SILICON-CARBIDE
Authors: SCHADT M PENSL G DEVATY RP CHOYKE WJ STEIN R STEPHANI D
Citation: M. Schadt et al., ANISOTROPY OF THE ELECTRON HALL-MOBILITY IN 4H, 6H, AND 15R SILICON-CARBIDE, Applied physics letters, 65(24), 1994, pp. 3120-3122
INTENSE ERBIUM-1.54-MU-M PHOTOLUMINESCENCE FROM 2 TO 525 K IN ION-IMPLANTED 4H, 6H, 15R, AND 3C SIC
Authors: CHOYKE WJ DEVATY RP CLEMEN LL YOGANATHAN M PENSL G HASSLER C
Citation: Wj. Choyke et al., INTENSE ERBIUM-1.54-MU-M PHOTOLUMINESCENCE FROM 2 TO 525 K IN ION-IMPLANTED 4H, 6H, 15R, AND 3C SIC, Applied physics letters, 65(13), 1994, pp. 1668-1670
FAR-INFRARED DETECTION WITH A SI P-I INTERFACE AND MULTILAYER STRUCTURES
Authors: PERERA AGU CHOE JW FRANCOMBE MH SHERRIFF RE DEVATY RP
Citation: Agu. Perera et al., FAR-INFRARED DETECTION WITH A SI P-I INTERFACE AND MULTILAYER STRUCTURES, Superlattices and microstructures, 14(1), 1993, pp. 123-128
OPTICAL REFLECTIVITY OF 3C AND 4H-SIC POLYTYPES - THEORY AND EXPERIMENT
Authors: LAMBRECHT WRL SEGALL B SUTTROP W YOGANATHAN M DEVATY RP CHOYKE WJ EDMOND JA POWELL JA ALOUANI M
Citation: Wrl. Lambrecht et al., OPTICAL REFLECTIVITY OF 3C AND 4H-SIC POLYTYPES - THEORY AND EXPERIMENT, Applied physics letters, 63(20), 1993, pp. 2747-2749
ALUMINUM ACCEPTOR 4 PARTICLE BOUND EXCITON COMPLEX IN 4H, 6H, AND 3C SIC
Authors: CLEMEN LL DEVATY RP MACMILLAN MF YOGANATHAN M CHOYKE WJ LARKIN DJ POWELL JA EDMOND JA KONG HS
Citation: Ll. Clemen et al., ALUMINUM ACCEPTOR 4 PARTICLE BOUND EXCITON COMPLEX IN 4H, 6H, AND 3C SIC, Applied physics letters, 62(23), 1993, pp. 2953-2955
Risultati: 1-21 |