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Results: 15
EFFECTS OF NITROGEN SUPPLY ON GROWTH AND NITROGEN UPTAKE BY MISCANTHUS-SINENSIS DURING ESTABLISHMENT
Authors:
WIESLER F
DICKMANN J
HORST WJ
Citation: F. Wiesler et al., EFFECTS OF NITROGEN SUPPLY ON GROWTH AND NITROGEN UPTAKE BY MISCANTHUS-SINENSIS DURING ESTABLISHMENT, Zeitschrift fur Pflanzenernahrung und Bodenkunde, 160(1), 1997, pp. 25-31
Authors:
DICKMANN J
RIEPE K
GEYER A
MAILE BE
SCHURR A
BERG M
DAEMBKES H
Citation: J. Dickmann et al., IN(0.52)A(0.48)AS INXGA1-XAS (0.53-LESS-THAN-X-LESS-THAN-1.0) PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES- DESIGN AND PERFORMANCES/, JPN J A P 1, 35(1A), 1996, pp. 10-15
Authors:
STRAHLE S
HENLE B
LEE L
KUNZEL H
HACKBARTH T
DICKMANN J
KOHN E
Citation: S. Strahle et al., MICROWAVE PERFORMANCE OF INP-BASED HEMTS FOR LOW-VOLTAGE APPLICATION, Microwave and optical technology letters, 11(3), 1996, pp. 131-135
Authors:
BERG M
DICKMANN J
GUEHL R
BISCHOF W
Citation: M. Berg et al., 60- AND 77-GHZ MONOLITHIC AMPLIFIERS UTILIZING INP-BASED HEMTS AND COPLANAR WAVE-GUIDES, Microwave and optical technology letters, 11(3), 1996, pp. 139-145
Authors:
DICKMANN J
SCHILDBERG S
RIEPE K
MAILE BE
SCHURR A
GEYER A
NAROZNY P
Citation: J. Dickmann et al., BREAKDOWN MECHANISMS IN PSEUDOMORPHIC INALAS INXGA1-XAS HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP .2. ON-STATE/, JPN J A P 1, 34(4A), 1995, pp. 1805-1808
Authors:
DICKMANN J
SCHILDBERG S
RIEPE K
MAILE BE
SCHURR A
GEYER A
NAROZNY P
Citation: J. Dickmann et al., BREAKDOWN MECHANISMS IN PSEUDOMORPHIC INALAS INXGA1-X HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP .1. OFF-STATE/, JPN J A P 1, 34(1), 1995, pp. 66-71
Authors:
GEIGER D
MITTERMEIER E
DICKMANN J
GENG C
WINTERHOF R
SCHOLZ F
KOHN E
Citation: D. Geiger et al., INGAP INGAAS HFET WITH HIGH-CURRENT DENSITY AND HIGH CUTOFF FREQUENCIES/, IEEE electron device letters, 16(6), 1995, pp. 259-261
Authors:
GEIGER D
DICKMANN J
WOLK C
KOHN E
Citation: D. Geiger et al., RECESS DEPENDENT BREAKDOWN BEHAVIOR OF GAAS-HFETS, IEEE electron device letters, 16(1), 1995, pp. 30-32
Authors:
SHITARA T
EBERL K
DICKMANN J
WOLK C
Citation: T. Shitara et al., GROWTH OF HIGH-QUALITY INGAP AND APPLICATION FOR MODULATION-DOPED STRUCTURE BY MOLECULAR-BEAM EPITAXY WITH A GAP SOURCE, Journal of crystal growth, 150(1-4), 1995, pp. 1261-1265
Authors:
DICKMANN J
BERG M
GEYER A
DAEMBKES H
SCHOLZ F
MOSER M
Citation: J. Dickmann et al., (AL0.7GA0.3)(0.5)IN0.5P IN0.15GA0.85AS/GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH VERY THIN HIGHLY P-DOPED SURFACE-LAYER/, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 2-7
Authors:
BAHL SR
DELALAMO JA
DICKMANN J
SCHILDBERG S
Citation: Sr. Bahl et al., OFF-STATE BREAKDOWN IN INALAS INGAAS MODFETS, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 15-22
Authors:
GEIGER D
MITTERMEIER E
DICKMANN J
GENG C
SCHOLZ F
KOHN E
Citation: D. Geiger et al., NOISE IN CHANNEL DOPED GAINP INGAAS HFET DEVICES/, Electronics Letters, 31(15), 1995, pp. 1295-1297
Authors:
DICKMANN J
DAEMBKES H
SCHILDBERG S
FITTNG HJ
ELLROD P
TEGUDE FJ
Citation: J. Dickmann et al., ANALYTICAL MODEL TO DETERMINE THE GATE LEAKAGE CURRENT IN IN0.52AL0.48AS INXGA1-XAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORSCAUSED BY THERMIONIC FIELD-EMISSION/, JPN J A P 1, 33(4A), 1994, pp. 1735-1739
Authors:
BAHL SR
DELALAMO JA
DICKMANN J
SCHILDBERG S
Citation: Sr. Bahl et al., IIIA-1 PHYSICS OF BREAKDOWN IN INALAS INGAAS MODFETS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2110-2111
Authors:
DICKMANN J
KOSSLOWSKI S
MAILE BE
HASPEKLO H
HEUTHE S
GEYER A
RIEPE K
SCHURR A
DAEMBKES H
KUNZEL H
BOTTCHER J
Citation: J. Dickmann et al., HIGH-GAIN 28 GHZ COPLANAR WAVE-GUIDE MONOLITHIC AMPLIFIER ON INP SUBSTRATE, Electronics Letters, 29(5), 1993, pp. 493-495
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