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Results: 1-12 |
Results: 12
LIGHT-EMISSION OF DENTAL ENAMEL AFTER INFRARED RESONANT EXCITATION
Authors: LOHNER A GANICHEV SD HUBER WM DIENER J PRETTL W
Citation: A. Lohner et al., LIGHT-EMISSION OF DENTAL ENAMEL AFTER INFRARED RESONANT EXCITATION, Infrared physics & technology, 39(1), 1998, pp. 23-28
SYMMETRY OF THE ELECTRONIC STATES OF SI NANOCRYSTALS - AN EXPERIMENTAL-STUDY
Authors: KOVALEV D BENCHORIN M DIENER J AVERBOUKH B POLISSKI G KOCH F
Citation: D. Kovalev et al., SYMMETRY OF THE ELECTRONIC STATES OF SI NANOCRYSTALS - AN EXPERIMENTAL-STUDY, Physical review letters, 79(1), 1997, pp. 119-122
EXCITON FINE-STRUCTURE IN UNDOPED GAN EPITAXIAL-FILMS
Authors: VOLM D OETTINGER K STREIBL T KOVALEV D BENCHORIN M DIENER J MEYER BK MAJEWSKI J ECKEY L HOFFMANN A AMANO H AKASAKI I HIRAMATSU K DETCHPROHM T
Citation: D. Volm et al., EXCITON FINE-STRUCTURE IN UNDOPED GAN EPITAXIAL-FILMS, Physical review. B, Condensed matter, 53(24), 1996, pp. 16543-16550
EXCITATION OF THE POROUS SILICON PHOTOLUMINESCENCE BY A MULTIPHOTON VIBRONIC PROCESS
Authors: DIENER J BENCHORIN M KOVALEV DI GANICHEV SD KOCH F
Citation: J. Diener et al., EXCITATION OF THE POROUS SILICON PHOTOLUMINESCENCE BY A MULTIPHOTON VIBRONIC PROCESS, Thin solid films, 276(1-2), 1996, pp. 116-119
POLARIZATION OF POROUS SILICON PHOTOLUMINESCENCE - ALIGNMENT AND BUILT-IN ANISOTROPY
Authors: KOVALEV D BENCHORIN M DIENER J KOCH F KUX A EFROS AL ROSEN M GIPPIUS NA TIKHODEEV SG
Citation: D. Kovalev et al., POLARIZATION OF POROUS SILICON PHOTOLUMINESCENCE - ALIGNMENT AND BUILT-IN ANISOTROPY, Thin solid films, 276(1-2), 1996, pp. 120-122
THE TEMPERATURE-DEPENDENCE OF THE ABSORPTION-COEFFICIENT OF POROUS SILICON
Authors: KOVALEV D POLISSKI G BENCHORIN M DIENER J KOCH F
Citation: D. Kovalev et al., THE TEMPERATURE-DEPENDENCE OF THE ABSORPTION-COEFFICIENT OF POROUS SILICON, Journal of applied physics, 80(10), 1996, pp. 5978-5983
POOLE-FRENKEL EFFECT IN TERAHERTZ ELECTROMAGNETIC-FIELDS
Authors: GANICHEV SD DIENER J YASSIEVICH IN PRETTL W
Citation: Sd. Ganichev et al., POOLE-FRENKEL EFFECT IN TERAHERTZ ELECTROMAGNETIC-FIELDS, Europhysics letters, 29(4), 1995, pp. 315-320
LIGHT FROM POROUS SILICON BY MULTIPHOTON VIBRONIC EXCITATION
Authors: DIENER J BENCHORIN M KOVALEV DI GANICHEV SD KOCH F
Citation: J. Diener et al., LIGHT FROM POROUS SILICON BY MULTIPHOTON VIBRONIC EXCITATION, Physical review. B, Condensed matter, 52(12), 1995, pp. 8617-8620
TUNNELING IONIZATION OF AUTOLOCALIZED DX(-) CENTERS IN TERAHERTZ FIELDS
Authors: GANICHEV SD YASSIEVICH IN PRETTL W DIENER J MEYER BK BENZ KW
Citation: Sd. Ganichev et al., TUNNELING IONIZATION OF AUTOLOCALIZED DX(-) CENTERS IN TERAHERTZ FIELDS, Physical review letters, 75(8), 1995, pp. 1590-1593
POROUS SI ANISOTROPY FROM PHOTOLUMINESCENCE POLARIZATION
Authors: KOVALEV D BENCHORIN M DIENER J KOCH F EFROS AL ROSEN M GIPPIUS NA TIKHODEEV SG
Citation: D. Kovalev et al., POROUS SI ANISOTROPY FROM PHOTOLUMINESCENCE POLARIZATION, Applied physics letters, 67(11), 1995, pp. 1585-1587
DIRECT TUNNEL IONIZATION OF DEEP IMPURITIES IN THE ELECTRIC-FIELD OF FAR-INFRARED RADIATION
Authors: GANICHEV SD DIENER J PRETTL W
Citation: Sd. Ganichev et al., DIRECT TUNNEL IONIZATION OF DEEP IMPURITIES IN THE ELECTRIC-FIELD OF FAR-INFRARED RADIATION, Solid state communications, 92(11), 1994, pp. 883-887
NONLINEAR FAR-INFRARED ABSORPTION IN INSB DUE TO LIGHT IMPACT IONIZATION
Authors: GANICHEV SD DIENER J PRETTL W
Citation: Sd. Ganichev et al., NONLINEAR FAR-INFRARED ABSORPTION IN INSB DUE TO LIGHT IMPACT IONIZATION, Applied physics letters, 64(15), 1994, pp. 1977-1979
Risultati: 1-12 |