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Results: 1-16 |
Results: 16
ALSB INAS HEMTS FOR LOW-VOLTAGE, HIGH-SPEED APPLICATIONS/
Authors: BOOS JB KRUPPA W BENNETT BR PARK D KIRCHOEFER SW BASS R DIETRICH HB
Citation: Jb. Boos et al., ALSB INAS HEMTS FOR LOW-VOLTAGE, HIGH-SPEED APPLICATIONS/, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1869-1875
GAN FETS FOR MICROWAVE AND HIGH-TEMPERATURE APPLICATIONS
Authors: BINARI SC DOVERSPIKE K KELNER G DIETRICH HB WICKENDEN AE
Citation: Sc. Binari et al., GAN FETS FOR MICROWAVE AND HIGH-TEMPERATURE APPLICATIONS, Solid-state electronics, 41(2), 1997, pp. 177-180
FABRICATION AND CHARACTERIZATION OF GAN FETS
Authors: BINARI SC KRUPPA W DIETRICH HB KELNER G WICKENDEN AE FREITAS JA
Citation: Sc. Binari et al., FABRICATION AND CHARACTERIZATION OF GAN FETS, Solid-state electronics, 41(10), 1997, pp. 1549-1554
CHARACTERISTICS OF FULLY IMPLANTED GAAS VERTICAL PIN DIODES
Authors: RAO MV STACEY W DIETRICH HB
Citation: Mv. Rao et al., CHARACTERISTICS OF FULLY IMPLANTED GAAS VERTICAL PIN DIODES, Solid-state electronics, 41(1), 1997, pp. 47-50
NANOSCALE PATTERNING USING NANOCHANNEL GLASS REPLICA FILMS
Authors: TONUCCI RJ PEARSON DH KATZER DS ROSENBERG A DIETRICH HB
Citation: Rj. Tonucci et al., NANOSCALE PATTERNING USING NANOCHANNEL GLASS REPLICA FILMS, Superlattices and microstructures, 20(4), 1996, pp. 627-632
DEVELOPMENT AND CHARACTERIZATION OF ZONE MELT GROWTH GAAS FOR GAMMA-RAY DETECTORS
Authors: KING SE DIETRICH HB HENRY RL KATZER DS MOORE WJ PHILLIPS GW MANIA RC
Citation: Se. King et al., DEVELOPMENT AND CHARACTERIZATION OF ZONE MELT GROWTH GAAS FOR GAMMA-RAY DETECTORS, IEEE transactions on nuclear science, 43(3), 1996, pp. 1376-1380
B IMPLANTS IN SI1-XGEX SI
Authors: BERRY AK THOMPSON PE RAO MV FATEMI M DIETRICH HB
Citation: Ak. Berry et al., B IMPLANTS IN SI1-XGEX SI, Applied physics letters, 68(3), 1996, pp. 391-393
H, HE, AND N IMPLANT ISOLATION OF N-TYPE GAN
Authors: BINARI SC DIETRICH HB KELNER G ROWLAND LB DOVERSPIKE K WICKENDEN DK
Citation: Sc. Binari et al., H, HE, AND N IMPLANT ISOLATION OF N-TYPE GAN, Journal of applied physics, 78(5), 1995, pp. 3008-3011
DETECTION OF SIMULTANEOUS LATTICE EXPANSION AND CONTRACTION IN LOW-ENERGY, H-IMPLANTED INP
Authors: FATEMI M MOLNAR B DIETRICH HB ANDERSON WT
Citation: M. Fatemi et al., DETECTION OF SIMULTANEOUS LATTICE EXPANSION AND CONTRACTION IN LOW-ENERGY, H-IMPLANTED INP, Applied physics letters, 66(7), 1995, pp. 825-826
ION-IMPLANTATION INTO (X11)A-ORIENTED INP AND GAAS (X-LESS-THAN-OR-EQUAL-TO-4)
Authors: RAO MV DIETRICH HB KLEIN PB FATHIMULLA A SIMONS DS CHI PH
Citation: Mv. Rao et al., ION-IMPLANTATION INTO (X11)A-ORIENTED INP AND GAAS (X-LESS-THAN-OR-EQUAL-TO-4), Journal of applied physics, 75(12), 1994, pp. 7774-7778
ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN
Authors: BINARI SC DIETRICH HB KELNER G ROWLAND LB DOVERSPIKE K GASKILL DK
Citation: Sc. Binari et al., ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN, Electronics Letters, 30(11), 1994, pp. 909-911
MEV ENERGY SULFUR IMPLANTATION IN GAAS AND INP
Authors: VELLANKI J NADELLA RK RAO MV DIETRICH HB SIMONS DS CHI PH
Citation: J. Vellanki et al., MEV ENERGY SULFUR IMPLANTATION IN GAAS AND INP, Journal of electronic materials, 22(5), 1993, pp. 559-560
HIGH-RESOLUTION X-RAY-ANALYSIS OF STRAIN IN LOW-TEMPERATURE GAAS
Authors: FATEMI M TADAYON B TWIGG ME DIETRICH HB
Citation: M. Fatemi et al., HIGH-RESOLUTION X-RAY-ANALYSIS OF STRAIN IN LOW-TEMPERATURE GAAS, Physical review. B, Condensed matter, 48(12), 1993, pp. 8911-8917
OBSERVATION OF ION-IMPLANTATION-DAMAGE-CREATED N-TYPE CONDUCTIVITY ININP AFTER HIGH-TEMPERATURE ANNEALING
Authors: MOLNAR B KENNEDY TA GLASER ER DIETRICH HB
Citation: B. Molnar et al., OBSERVATION OF ION-IMPLANTATION-DAMAGE-CREATED N-TYPE CONDUCTIVITY ININP AFTER HIGH-TEMPERATURE ANNEALING, Journal of applied physics, 74(5), 1993, pp. 3091-3098
IMPACT IONIZATION IN HIGH-OUTPUT-CONDUCTANCE REGION OF 0.5-MU-M ALSB INAS HEMTS (VOL 29, PG 1888, 1993)/
Authors: BOOS JB KRUPPA W SHANABROOK BV PARK D DAVIS JL DIETRICH HB
Citation: Jb. Boos et al., IMPACT IONIZATION IN HIGH-OUTPUT-CONDUCTANCE REGION OF 0.5-MU-M ALSB INAS HEMTS (VOL 29, PG 1888, 1993)/, Electronics Letters, 29(25), 1993, pp. 2231-2231
IMPACT IONIZATION IN HIGH-OUTPUT-CONDUCTANCE REGION OF 0.5 MU-M ALSB INAS HEMTS/
Authors: BOOS JB SHANABROOK BV PARK D DAVIS JL DIETRICH HB
Citation: Jb. Boos et al., IMPACT IONIZATION IN HIGH-OUTPUT-CONDUCTANCE REGION OF 0.5 MU-M ALSB INAS HEMTS/, Electronics Letters, 29(21), 1993, pp. 1888-1890
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