Authors: DIZAJI HR DHANASEKARAN R

Citation: Hr. Dizaji et R. Dhanasekaran, CONCENTRATION PROFILE AND GROWTH-RATE STUDIES OF IN1-XGAXP LPE BY COMPUTER-SIMULATION TECHNIQUE, Journal of materials science. Materials in electronics, 7(3), 1996, pp. 181-185

Authors: DIZAJI HR DHANASEKARAN R

Citation: Hr. Dizaji et R. Dhanasekaran, STUDIES ON THE CONCENTRATION PROFILES AND GROWTH-RATE OF GAP BY LIQUID-PHASE EPITAXY, Journal of materials science. Materials in electronics, 7(2), 1996, pp. 107-110

Authors: DIZAJI HR DHANASEKARAN R

Citation: Hr. Dizaji et R. Dhanasekaran, SIMULATION STUDIES OF LIQUID-PHASE EPITAXIAL-GROWTH OF IN1-XGAXAS, Materials science & engineering. B, Solid-state materials for advanced technology, 39(2), 1996, pp. 117-122

Authors: DIZAJI HR DHANASEKARAN R

Citation: Hr. Dizaji et R. Dhanasekaran, A THEORETICAL APPROACH TO THE IN1-XGAXP LPE GROWTH BY COMPUTER-SIMULATION TECHNIQUE, Physica status solidi. a, Applied research, 156(1), 1996, pp. 71-79

Authors: DIZAJI HR DHANASEKARAN R

Citation: Hr. Dizaji et R. Dhanasekaran, INVESTIGATION OF CONCENTRATION PROFILES AND GROWTH-RATE OF INAS LPE BY COMPUTER-SIMULATION TECHNIQUE, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(6), 1995, pp. 601-607