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Results:
1-7
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Results: 7
Authors:
DONOVAL D
DROBNY V
LUZA M
Citation: D. Donoval et al., A CONTRIBUTION TO THE ANALYSIS OF THE I-V CHARACTERISTICS OF SCHOTTKYSTRUCTURES, Solid-state electronics, 42(2), 1998, pp. 235-241
Authors:
DONOVAL D
Citation: D. Donoval, ECS97, ELECTRONIC-CIRCUITS AND SYSTEMS CONFERENCE, IEEE design & test of computers, 14(4), 1997, pp. 5-6
Authors:
DONOVAL D
SNOWDEN CM
NAGL V
RACKO J
BARUS M
Citation: D. Donoval et al., MODELING OF CRSI2-SI AND MOSI2-SI SCHOTTKY-BARRIER CONTACTS, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1187-1189
Authors:
DONOVAL D
SNOWDEN CM
BARUS M
RACKO J
BEDLEK M
Citation: D. Donoval et al., CRITICAL ANALYSIS OF THE SCHOTTKY BOUNDARY-CONDITION FOR NUMERICAL-SIMULATION OF SCHOTTKY AND MESFET STRUCTURE, Physica scripta. T, 50(4), 1994, pp. 432-436
Authors:
HROMCOVA J
DONOVAL D
RACKO J
Citation: J. Hromcova et al., NUMERICAL-SIMULATION OF A METAL-SEMICONDUCTOR-METAL STRUCTURE WITH SCHOTTKY CONTACTS AT BOTH ENDS, Physica status solidi. a, Applied research, 142(1), 1994, pp. 167-175
Authors:
BARUS M
DONOVAL D
Citation: M. Barus et D. Donoval, ANALYSIS OF I-V-MEASUREMENTS ON CRSI2-SI SCHOTTKY STRUCTURES IN A WIDE TEMPERATURE-RANGE, Solid-state electronics, 36(7), 1993, pp. 969-974
Authors:
RACKO J
DONOVAL D
BEDLEK M
BARUS M
SATKA A
HROMCOVA J
Citation: J. Racko et al., NEW BOUNDARY-CONDITIONS FOR THE SIMULATION OF SCHOTTKY STRUCTURE CHARACTERISTICS, Solid-state electronics, 36(12), 1993, pp. 1790-1792
Risultati:
1-7
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