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Results: 1-18 |
Results: 18
ULTRALOW ENERGY SECONDARY-ION MASS-SPECTROMETRY AND TRANSIENT YIELDS AT THE SILICON SURFACE
Authors: DOWSETT MG ORMSBY TJ COOKE GA CHU DP
Citation: Mg. Dowsett et al., ULTRALOW ENERGY SECONDARY-ION MASS-SPECTROMETRY AND TRANSIENT YIELDS AT THE SILICON SURFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 302-305
QUANTIFICATION OF SECONDARY-ION-MASS SPECTROSCOPY DEPTH PROFILES USING MAXIMUM-ENTROPY DECONVOLUTION WITH A SAMPLE INDEPENDENT RESPONSE FUNCTION
Authors: DOWSETT MG CHU DP
Citation: Mg. Dowsett et Dp. Chu, QUANTIFICATION OF SECONDARY-ION-MASS SPECTROSCOPY DEPTH PROFILES USING MAXIMUM-ENTROPY DECONVOLUTION WITH A SAMPLE INDEPENDENT RESPONSE FUNCTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 377-381
MC3D - A 3-DIMENSIONAL MONTE-CARLO SYSTEM SIMULATING IMAGE-CONTRAST IN SURFACE ANALYTICAL SCANNING ELECTRON-MICROSCOPY - I - OBJECT-ORIENTED SOFTWARE-DESIGN AND TESTS
Authors: YAN H ELGOMATI MM PRUTTON M WILKINSON DK CHU DP DOWSETT MG
Citation: H. Yan et al., MC3D - A 3-DIMENSIONAL MONTE-CARLO SYSTEM SIMULATING IMAGE-CONTRAST IN SURFACE ANALYTICAL SCANNING ELECTRON-MICROSCOPY - I - OBJECT-ORIENTED SOFTWARE-DESIGN AND TESTS, Scanning, 20(6), 1998, pp. 465-484
DOPANT SPATIAL DISTRIBUTIONS - SAMPLE-INDEPENDENT RESPONSE FUNCTION AND MAXIMUM-ENTROPY RECONSTRUCTION
Authors: CHU DP DOWSETT MG
Citation: Dp. Chu et Mg. Dowsett, DOPANT SPATIAL DISTRIBUTIONS - SAMPLE-INDEPENDENT RESPONSE FUNCTION AND MAXIMUM-ENTROPY RECONSTRUCTION, Physical review. B, Condensed matter, 56(23), 1997, pp. 15167-15170
STRUCTURAL AND OPTICAL CHARACTERIZATION OF UNDOPED SI-SI0.78GE0.22 SI(001) SUPERLATTICES GROWN BY MBE/
Authors: MIRONOV OA PHILLIPS PJ PARKER EHC DOWSETT MG BARRADAS NP JEYNES C MIRONOV M GNEZDILOV VP USHAKOV V EREMENKO VV
Citation: Oa. Mironov et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF UNDOPED SI-SI0.78GE0.22 SI(001) SUPERLATTICES GROWN BY MBE/, Thin solid films, 306(2), 1997, pp. 307-312
USE OF MAXIMUM-ENTROPY DECONVOLUTION FOR THE STUDY OF SILICON DELTA-LAYERS IN GAAS
Authors: COOKE GA DOWSETT MG ALLEN PN COLLINS R MIETHE K
Citation: Ga. Cooke et al., USE OF MAXIMUM-ENTROPY DECONVOLUTION FOR THE STUDY OF SILICON DELTA-LAYERS IN GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 132-135
EXPERIMENTAL INVESTIGATION OF THE INCREASE IN-DEPTH RESOLUTION OBTAINED THROUGH THE USE OF MAXIMUM-ENTROPY DECONVOLUTION OF SECONDARY-ION MASS-SPECTROMETRY DEPTH PROFILES
Authors: COOKE GA DOWSETT MG PHILLIPS P
Citation: Ga. Cooke et al., EXPERIMENTAL INVESTIGATION OF THE INCREASE IN-DEPTH RESOLUTION OBTAINED THROUGH THE USE OF MAXIMUM-ENTROPY DECONVOLUTION OF SECONDARY-ION MASS-SPECTROMETRY DEPTH PROFILES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 283-286
2-DIMENSIONAL PROFILING OF LARGE TILT ANGLE, LOW-ENERGY BORON-IMPLANTED STRUCTURE USING SECONDARY-ION MASS-SPECTROMETRY
Authors: COOKE GA PEARSON P GIBBONS R DOWSETT MG HILL C
Citation: Ga. Cooke et al., 2-DIMENSIONAL PROFILING OF LARGE TILT ANGLE, LOW-ENERGY BORON-IMPLANTED STRUCTURE USING SECONDARY-ION MASS-SPECTROMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 348-352
NOISE, RESOLUTION AND ENTROPY IN SPUTTER PROFILING
Authors: DOWSETT MG COLLINS R
Citation: Mg. Dowsett et R. Collins, NOISE, RESOLUTION AND ENTROPY IN SPUTTER PROFILING, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 354(1719), 1996, pp. 2713-2729
SECONDARY-ION MASS-SPECTROSCOPY RESOLUTION WITH ULTRA-LOW BEAM ENERGIES
Authors: CLEGG JB SMITH NS DOWSETT MG THEUNISSEN MJJ DEBOER WB
Citation: Jb. Clegg et al., SECONDARY-ION MASS-SPECTROSCOPY RESOLUTION WITH ULTRA-LOW BEAM ENERGIES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2645-2650
CHARACTERIZATION OF THE NOISE IN SECONDARY-ION MASS-SPECTROMETRY DEPTH PROFILES
Authors: CHU DP DOWSETT MG COOKE GA
Citation: Dp. Chu et al., CHARACTERIZATION OF THE NOISE IN SECONDARY-ION MASS-SPECTROMETRY DEPTH PROFILES, Journal of applied physics, 80(12), 1996, pp. 7104-7107
COMMENT ON THE POSSIBILITY OF PARTIAL DECONVOLUTION OF SIMS DEPTH PROFILES IN AN ANALYTIC FORM FOR THE SIMS RESPONSE FUNCTION MEASURED FROMULTRA-THIN IMPURITY LAYERS - REPLY
Authors: DOWSETT MG
Citation: Mg. Dowsett, COMMENT ON THE POSSIBILITY OF PARTIAL DECONVOLUTION OF SIMS DEPTH PROFILES IN AN ANALYTIC FORM FOR THE SIMS RESPONSE FUNCTION MEASURED FROMULTRA-THIN IMPURITY LAYERS - REPLY, Surface and interface analysis, 23(13), 1995, pp. 900-901
SECONDARY-ION MASS-SPECTROMETRY ANALYSIS OF ULTRATHIN IMPURITY LAYERSIN SEMICONDUCTORS AND THEIR USE IN QUANTIFICATION, INSTRUMENTAL ASSESSMENT, AND FUNDAMENTAL MEASUREMENTS
Authors: DOWSETT MG BARLOW RD ALLEN PN
Citation: Mg. Dowsett et al., SECONDARY-ION MASS-SPECTROMETRY ANALYSIS OF ULTRATHIN IMPURITY LAYERSIN SEMICONDUCTORS AND THEIR USE IN QUANTIFICATION, INSTRUMENTAL ASSESSMENT, AND FUNDAMENTAL MEASUREMENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 186-198
COMPARISON BETWEEN COMPUTER-SIMULATION AND DIRECT SECONDARY-ION MASS-SPECTROMETRY MEASUREMENT OF LATERAL DOPANT DISTRIBUTIONS
Authors: COOKE GA DOWSETT MG HILL C PEARSON PJ WALTON AJ
Citation: Ga. Cooke et al., COMPARISON BETWEEN COMPUTER-SIMULATION AND DIRECT SECONDARY-ION MASS-SPECTROMETRY MEASUREMENT OF LATERAL DOPANT DISTRIBUTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 243-246
AN ANALYTIC FORM FOR THE SIMS RESPONSE FUNCTION MEASURED FROM ULTRA-THIN IMPURITY LAYERS
Authors: DOWSETT MG ROWLANDS G ALLEN PN BARLOW RD
Citation: Mg. Dowsett et al., AN ANALYTIC FORM FOR THE SIMS RESPONSE FUNCTION MEASURED FROM ULTRA-THIN IMPURITY LAYERS, Surface and interface analysis, 21(5), 1994, pp. 310-315
MAXIMUM-ENTROPY QUANTIFICATION OF SIMS DEPTH PROFILES - BEHAVIOR AS AFUNCTION OF PRIMARY ION ENERGY
Authors: ALLEN PN DOWSETT MG
Citation: Pn. Allen et Mg. Dowsett, MAXIMUM-ENTROPY QUANTIFICATION OF SIMS DEPTH PROFILES - BEHAVIOR AS AFUNCTION OF PRIMARY ION ENERGY, Surface and interface analysis, 21(3), 1994, pp. 206-209
CHARACTERIZATION OF SHARP INTERFACES AND DELTA-DOPED LAYERS IN SEMICONDUCTORS USING SECONDARY-ION MASS-SPECTROMETRY
Authors: DOWSETT MG BARLOW RD
Citation: Mg. Dowsett et Rd. Barlow, CHARACTERIZATION OF SHARP INTERFACES AND DELTA-DOPED LAYERS IN SEMICONDUCTORS USING SECONDARY-ION MASS-SPECTROMETRY, Analytica chimica acta, 297(1-2), 1994, pp. 253-275
SIMS PROFILE QUANTIFICATION BY MAXIMUM-ENTROPY DECONVOLUTION
Authors: ALLEN PN DOWSETT MG COLLINS R
Citation: Pn. Allen et al., SIMS PROFILE QUANTIFICATION BY MAXIMUM-ENTROPY DECONVOLUTION, Surface and interface analysis, 20(8), 1993, pp. 696-702
Risultati: 1-18 |