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Results: 1-18 |
Results: 18
NONRADIATIVE RECOMBINATION AT GAAS HOMOINTERFACES FABRICATED USING ANAS CAP DEPOSITION REMOVAL PROCESS/
Authors: PASSLACK M DROOPAD R YU Z OVERGAARD C BOWERS B ABROKWAH J
Citation: M. Passlack et al., NONRADIATIVE RECOMBINATION AT GAAS HOMOINTERFACES FABRICATED USING ANAS CAP DEPOSITION REMOVAL PROCESS/, Applied physics letters, 72(24), 1998, pp. 3163-3165
A VERTICAL-CAVITY SURFACE-EMITTING LASER APPLIED TO A 0.8-MU-M NMOS DRIVER
Authors: MATHINE DL DROOPAD R MARACAS GN
Citation: Dl. Mathine et al., A VERTICAL-CAVITY SURFACE-EMITTING LASER APPLIED TO A 0.8-MU-M NMOS DRIVER, IEEE photonics technology letters, 9(7), 1997, pp. 869-871
CONTACTLESS ELECTROREFLECTANCE CHARACTERIZATION OF 3 INGAAS QUANTUM-WELLS PLACED IN A GAAS ALGAAS RESONANT-CAVITY/
Authors: MONEGER S QIANG H POLLAK FH MATHINE DL DROOPAD R MARACAS GN
Citation: S. Moneger et al., CONTACTLESS ELECTROREFLECTANCE CHARACTERIZATION OF 3 INGAAS QUANTUM-WELLS PLACED IN A GAAS ALGAAS RESONANT-CAVITY/, Solid-state electronics, 39(6), 1996, pp. 871-874
REDUCTION OF THE THERMAL IMPEDANCE OF VERTICAL-CAVITY SURFACE-EMITTING LASERS AFTER INTEGRATION WITH COPPER SUBSTRATES
Authors: MATHINE DL ALLEE DR DROOPAD R MARACAS GN
Citation: Dl. Mathine et al., REDUCTION OF THE THERMAL IMPEDANCE OF VERTICAL-CAVITY SURFACE-EMITTING LASERS AFTER INTEGRATION WITH COPPER SUBSTRATES, Applied physics letters, 69(4), 1996, pp. 463-464
MEASUREMENT OF ALXGA1-XAS TEMPERATURE-DEPENDENT OPTICAL-CONSTANTS BY SPECTROSCOPIC ELLIPSOMETRY
Authors: KUO CH ANAND S FATHOLLAHNEJAD H RAMAMURTI R DROOPAD R MARACAS GN
Citation: Ch. Kuo et al., MEASUREMENT OF ALXGA1-XAS TEMPERATURE-DEPENDENT OPTICAL-CONSTANTS BY SPECTROSCOPIC ELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 681-684
ELLIPSOMETRY FOR III-V EPITAXIAL-GROWTH DIAGNOSTICS
Authors: MARACAS GN KUO CH ANAND S DROOPAD R SOHIE GRL LEVOLA T
Citation: Gn. Maracas et al., ELLIPSOMETRY FOR III-V EPITAXIAL-GROWTH DIAGNOSTICS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 727-732
LOW-RESISTANCE PD GE OHMIC CONTACTS TO EPITAXIALLY LIFTED-OFF N-TYPE GAAS FILM/
Authors: FATHOLLAHNEJAD H RAJESH R LIU J DROOPAD R MARACAS GN CARPENTER RW
Citation: H. Fathollahnejad et al., LOW-RESISTANCE PD GE OHMIC CONTACTS TO EPITAXIALLY LIFTED-OFF N-TYPE GAAS FILM/, Journal of electronic materials, 24(1), 1995, pp. 35-38
TEMPERATURE-DEPENDENT PSEUDODIELECTRIC FUNCTIONS OF GAAS DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY
Authors: MARACAS GN KUO CH ANAND S DROOPAD R
Citation: Gn. Maracas et al., TEMPERATURE-DEPENDENT PSEUDODIELECTRIC FUNCTIONS OF GAAS DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY, Journal of applied physics, 77(4), 1995, pp. 1701-1704
INTEGRATION OF A SINGLE VERTICAL-CAVITY SURFACE-EMITTING LASER ONTO ACMOS INVERTER CHIP
Authors: DARYANANI S FATHOLLAHNEJAD H MATHINE DL DROOPAD R KUBES A MARACAS GN
Citation: S. Daryanani et al., INTEGRATION OF A SINGLE VERTICAL-CAVITY SURFACE-EMITTING LASER ONTO ACMOS INVERTER CHIP, Electronics Letters, 31(10), 1995, pp. 833-834
APPLICATION OF THE DIGITAL ALLOY COMPOSITION GRADING TECHNIQUE TO STRAINED INGAAS GAAS/ALGAAS DIODE-LASER ACTIVE REGIONS/
Authors: CODY JG MATHINE DL DROOPAD R MARACAS GN RAJESH R CARPENTER RW
Citation: Jg. Cody et al., APPLICATION OF THE DIGITAL ALLOY COMPOSITION GRADING TECHNIQUE TO STRAINED INGAAS GAAS/ALGAAS DIODE-LASER ACTIVE REGIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1075-1077
DETERMINATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH PARAMETERS BY ELLIPSOMETRY
Authors: DROOPAD R KUO CH ANAND S CHOI KY MARACAS GN
Citation: R. Droopad et al., DETERMINATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH PARAMETERS BY ELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1211-1213
MEASUREMENT OF GAAS TEMPERATURE-DEPENDENT OPTICAL-CONSTANTS BY SPECTROSCOPIC ELLIPSOMETRY
Authors: KUO CH ANAND S DROOPAD R CHOI KY MARACAS GN
Citation: Ch. Kuo et al., MEASUREMENT OF GAAS TEMPERATURE-DEPENDENT OPTICAL-CONSTANTS BY SPECTROSCOPIC ELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1214-1216
LATTICE-CONSTANT DEPENDENCE OF THE DYNAMICAL EFFECTIVE CHARGE IN ALASAND GAAS
Authors: SPENCER GS HO AC MENENDEZ J DROOPAD R FATHOLLAHNEJAD H MARACAS GN
Citation: Gs. Spencer et al., LATTICE-CONSTANT DEPENDENCE OF THE DYNAMICAL EFFECTIVE CHARGE IN ALASAND GAAS, Physical review. B, Condensed matter, 50(19), 1994, pp. 14125-14130
2ND-ORDER RAMAN-SPECTROSCOPY OF ALAS - A TEST OF LATTICE-DYNAMICAL MODELS
Authors: SPENCER GS GRANT J GRAY R ZOLMAN J MENENDEZ J DROOPAD R MARACAS GN
Citation: Gs. Spencer et al., 2ND-ORDER RAMAN-SPECTROSCOPY OF ALAS - A TEST OF LATTICE-DYNAMICAL MODELS, Physical review. B, Condensed matter, 49(8), 1994, pp. 5761-5764
CHARACTERIZATION OF AN ALGAAS GAAS ASYMMETRIC TRIANGULAR QUANTUM-WELLGROWN BY A DIGITAL ALLOY APPROXIMATION/
Authors: MATHINE DL MARACAS GN GERBER DS DROOPAD R GRAHAM RJ MCCARTNEY MR
Citation: Dl. Mathine et al., CHARACTERIZATION OF AN ALGAAS GAAS ASYMMETRIC TRIANGULAR QUANTUM-WELLGROWN BY A DIGITAL ALLOY APPROXIMATION/, Journal of applied physics, 75(9), 1994, pp. 4551-4556
VERTICAL-CAVITY SURFACE-EMITTING LASERS INTEGRATED ONTO SILICON SUBSTRATES BY PDGE CONTACTS
Authors: FATHOLLAHNEJAD H MATHINE DL DROOPAD R MARACAS GN DARYANANI S
Citation: H. Fathollahnejad et al., VERTICAL-CAVITY SURFACE-EMITTING LASERS INTEGRATED ONTO SILICON SUBSTRATES BY PDGE CONTACTS, Electronics Letters, 30(15), 1994, pp. 1235-1236
PICOSECOND RAMAN STUDIES OF ELECTRIC-FIELD-INDUCED NONEQUILIBRIUM CARRIER DISTRIBUTIONS IN GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTORS
Authors: GRANN ED SHEIH SJ CHIA C TSEN KT SANKEY OF GUNCER SE FERRY DK MARACAS G DROOPAD R SALVADOR A BOTCHAREV A MORKOC H
Citation: Ed. Grann et al., PICOSECOND RAMAN STUDIES OF ELECTRIC-FIELD-INDUCED NONEQUILIBRIUM CARRIER DISTRIBUTIONS IN GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTORS, Applied physics letters, 64(10), 1994, pp. 1230-1232
PSEUDOMORPHIC INGAAS GAAS AND GAAS/ALGAAS ASYMMETRIC TRIANGULAR QUANTUM-WELLS GROWN BY MBE FOR OPTOELECTRONIC DEVICE APPLICATIONS/
Authors: DROOPAD R GERBER DS CHOI C MARACAS GN
Citation: R. Droopad et al., PSEUDOMORPHIC INGAAS GAAS AND GAAS/ALGAAS ASYMMETRIC TRIANGULAR QUANTUM-WELLS GROWN BY MBE FOR OPTOELECTRONIC DEVICE APPLICATIONS/, Journal of crystal growth, 127(1-4), 1993, pp. 606-610
Risultati: 1-18 |