AAAAAA

   
Results: 1-14 |
Results: 14
ELECTRICAL CHARACTERIZATION OF DEEP LEVELS EXISTING IN MG-SI-IMPLANTED AND MG-P-SI-IMPLANTED P(+)N INP JUNCTIONS
Authors: QUINTANILLA L DUENAS S CASTAN E PINACHO R PELAEZ R BARBOLLA J MARTIN JM GONZALEZDIAZ G
Citation: L. Quintanilla et al., ELECTRICAL CHARACTERIZATION OF DEEP LEVELS EXISTING IN MG-SI-IMPLANTED AND MG-P-SI-IMPLANTED P(+)N INP JUNCTIONS, Semiconductor science and technology, 13(4), 1998, pp. 389-393
DEPOSITION OF SINX-H THIN-FILMS BY THE ELECTRON-CYCLOTRON-RESONANCE AND ITS APPLICATION TO AL SINX-H/SI STRUCTURES/
Authors: GARCIA S MARTIL I DIAZ GG CASTAN E DUENAS S FERNANDEZ M
Citation: S. Garcia et al., DEPOSITION OF SINX-H THIN-FILMS BY THE ELECTRON-CYCLOTRON-RESONANCE AND ITS APPLICATION TO AL SINX-H/SI STRUCTURES/, Journal of applied physics, 83(1), 1998, pp. 332-338
GOOD QUALITY AL SINX-H/INP METAL-INSULATOR-SEMICONDUCTOR DEVICES OBTAINED WITH ELECTRON-CYCLOTRON-RESONANCE PLASMA METHOD/
Authors: GARCIA S MARTIL I DIAZ GG CASTAN E DUENAS S FERNANDEZ M
Citation: S. Garcia et al., GOOD QUALITY AL SINX-H/INP METAL-INSULATOR-SEMICONDUCTOR DEVICES OBTAINED WITH ELECTRON-CYCLOTRON-RESONANCE PLASMA METHOD/, Journal of applied physics, 83(1), 1998, pp. 600-603
THERMAL EMISSION PROCESSES OF DX CENTERS IN ALXGA1-XAS-SI
Authors: ENRIQUEZ L DUENAS S CASTAN E QUINTANILLA L PINACHO R BARBOLLA J
Citation: L. Enriquez et al., THERMAL EMISSION PROCESSES OF DX CENTERS IN ALXGA1-XAS-SI, Solid-state electronics, 41(1), 1997, pp. 103-109
DETAILED ELECTRICAL CHARACTERIZATION OF DX CENTERS IN SE-DOPED ALXGA1-XAS
Authors: DUENAS S PINACHO R CASTAN E QUINTANILLA L PELAEZ R BARBOLLA J
Citation: S. Duenas et al., DETAILED ELECTRICAL CHARACTERIZATION OF DX CENTERS IN SE-DOPED ALXGA1-XAS, Journal of applied physics, 82(9), 1997, pp. 4338-4345
DEEP LEVELS IN P(-N JUNCTIONS FABRICATED BY RAPID THERMAL ANNEALING OF MG OR MG())P IMPLANTED INP/
Authors: QUINTANILLA L DUENAS S CASTAN E PINACHO R BARBOLLA J MARTIN JM GONZALEZDIAZ G
Citation: L. Quintanilla et al., DEEP LEVELS IN P(-N JUNCTIONS FABRICATED BY RAPID THERMAL ANNEALING OF MG OR MG())P IMPLANTED INP/, Journal of applied physics, 81(7), 1997, pp. 3143-3150
EXPERIMENTAL-OBSERVATION OF CONDUCTANCE TRANSIENTS IN AL SINX-H/SI METAL-INSULATOR-SEMICONDUCTOR STRUCTURES/
Authors: DUENAS S PELAEZ R CASTAN E PINACHO R QUINTANILLA L BARBOLLA J MARTIL I GONZALEZDIAZ G
Citation: S. Duenas et al., EXPERIMENTAL-OBSERVATION OF CONDUCTANCE TRANSIENTS IN AL SINX-H/SI METAL-INSULATOR-SEMICONDUCTOR STRUCTURES/, Applied physics letters, 71(6), 1997, pp. 826-828
NOSOCOMIAL INFECTIONS IN SPAIN - RESULTS OF 5 NATIONWIDE SERIAL PREVALENCE SURVEYS (EPINE PROJECT, 1990 TO 1994)
Authors: VAQUE J ROSSELLO J TRILLA A MONGE V GARCIACABALLERO J ARRIBAS JL BLASCO P SAENZDOMINGUEZ JR ALBERO I CALBO F BARRIO J HERRUZO R SAENZGONZALEZ C AREVALO JM TORRES M TORRES MA FERNANDEZ I RODRIGUEZ F BAUTISTA JM ONA S ROMAN D RODRIGUEZCONTRERAS R OLIVER S RUIZ JLM LOPEZ E LORENTE J ALAMILLOS P DECUETO M FERNANDEZ R MARTIN JL BAJO J DAVILA J DUENAS S CREAGH R MUNIESA P PRIETO P PASTOR S TORGA AG FERNANDEZ T PRENDES P TORREBLANCA A NEBREDA T GONZALEZ M HIDALGO O LOPEZ G SANCHEZ JA ALAMO J RODRIGUEZ C SANZ JA MARTINEZ J BIURRUN K SANCHEZ I RUIZ E MEDRANO F HITA AF PARRAS L BLAZQUEZ M MUNOZ E DELALAMA J COLADAS N BENITO F CACERES C MORO J MENDO M SACRISTAN A FERNANDEZ G GALLEGOS N GUTIERREZ P HITA A MUNOZ JM VICENTE P ROBLES E BLANCO J CAMPINS M OLONA M ARMADANS L LLOBET E BAYAS JM GURGUI M DROBNIC L GARCES JM PLASS E SANJUAN N MISERACHS N DURAN M ESTEVE M BROTONS C ROSSELL F BELLORBI I GARCIA I CASAGRAN A MARTINEZ MT DOMENECH E MONER L PRIU R VERDAGUER A GURGUI L ALIJOTAS J PUJOL R PASCAL B SANCHEZ JM JAVALOYAS M GASOS MA PUIG X MARCOS JM BRAU J FLORES AG RIBAS F ANGLADA A VILARO J ORTA C VILAMALA K BAUCELLS J CLEMENTE C HERNANDEZ A ROMANS F PUIG T BISBE J GUARDIOLA JJ BALLESTER F PUIG MT MANONELLES A ROMEU V GALVANY J SARDA N LUNA J JIMENEZ J CERRILLO A VICIOLA M GESTAL JJ ARROJO F CAL ML SOUTO V LOPEZ JL URIEL B BLANCO A CUETO M PEREIRA MJ CERDA T QUINTAS JC BELIO C ASENSIO A LIZAN M COELLO R PAEZ JMG GOMEZ P BLANCO MA GOMEZ J VICENTE JA GORRICHO BP JIMENEZ ML SUAREZ JJ SANCHEZ S CHAVES F VALLS V GUTIERREZ ML BOTIA F PIQUERAS J MAS A DEJALON JG FERRERES L VARO J NOGUEIRA JM SANTOS M ASENSI F PAYA JS CERVELLO S ZANON VC MONTE CG OLTRA C NAVARRO JF NOVALES JL ELOSEGUI ME SAENZ JR MARTIN G CARRANDI B ELORDUY L GOMEZ H
Citation: J. Vaque et al., NOSOCOMIAL INFECTIONS IN SPAIN - RESULTS OF 5 NATIONWIDE SERIAL PREVALENCE SURVEYS (EPINE PROJECT, 1990 TO 1994), Infection control and hospital epidemiology, 17(5), 1996, pp. 293-297
DOPANT LEVEL FREEZE-OUT AND NONIDEAL EFFECTS IN 6H-SIC EPILAYER JUNCTIONS
Authors: QUINTANILA L DUENAS S CASTAN E PINACHO R PELAZ L BAILON L BARBOLLA J
Citation: L. Quintanila et al., DOPANT LEVEL FREEZE-OUT AND NONIDEAL EFFECTS IN 6H-SIC EPILAYER JUNCTIONS, Journal of applied physics, 79(1), 1996, pp. 310-315
ABILITY OF CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE TO STUDY SPATIAL-DISTRIBUTION AND ELECTRIC-FIELD DEPENDENCE OF EMISSION PROPERTIES OF DEEP LEVELS IN SEMICONDUCTORS
Authors: DUENAS S CASTAN E QUINTANILLA L ENRIQUEZ L BARBOLLA J LORATAMAYO E MONTSERRAT J
Citation: S. Duenas et al., ABILITY OF CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE TO STUDY SPATIAL-DISTRIBUTION AND ELECTRIC-FIELD DEPENDENCE OF EMISSION PROPERTIES OF DEEP LEVELS IN SEMICONDUCTORS, Materials science and technology, 11(10), 1995, pp. 1074-1078
THE PREVALENCE OF THE USE OF URINARY CATH ETERIZATION SYSTEMS IN SPANISH HOSPITALS
Authors: ROSSELLO J CAMPINS M VAQUE J LLOBET E ALBERO I PAHISSA A ARRIBAS JL ASENSIO A BARRIO J BLASCO P CALBO F COELLO R DOMINGUEZ V CABALLERO JG TORLA AG HERNANDEZ A HERRUZO R ENCINAR PL HIDALGO O MONGE V SAENZ MC SAENZ JR VAQUERO JL TORRES M GALVEZ R TORRES MA FERNANDEZ I RODRIGUEZ F BAUTISTA JM ONA S ROMAN D RODRIGUEZCONTRERAS R OLIVER S RUIZ JLM LOPEZ F LORENTE J ALAMILLOS P DECUETO M FERNANDEZ R MARTIN JL BAJO J DAVILA J DUENAS S CREAGH R SUREDA MC MUNIESA P PRIETO P PASTOR S TORGA AG FERNANDEZ T PRENDES P TORREBLANCA A NEBREDA T GONZALEZ M LOPEZ G SANCHEZ JA ALAMO J RODRIGUEZ C SANZ JA MARTINEZ J BIURRUN A SANCHEZ I RUIZ E MEDRANO F HITA AF PARRAS L PARRAS L BLAZQUEZ M MUNOZ E DELALAMA J COLADAS N MORO J BENITO F CACERES C MORO J MENDO M SACRISTAN A FERNANDEZ G GALLEGOS N GUTIERREZ P HITA A MUNOZ JM VICENTE P ROBLES E BLANCO J OLONA M ARMADANS L BAYAS JM GURGUI M DROBNIC L GARCES JM PLASS E SANJUAN N MISERACHS N DURAN M ESTEVE M BROTONS C ROSSELL F BELLORBI I GARCIA I CASAGRAN A MARTINEZ MT DOMENECH E MONER L PRIU R VERDAGUER A GURGUI L ALIJOTAS J PUJOL R PASCAL B SANCHEZ JM JAVALOYAS M GASOS MA PUIG X MARCOS JM BRAU J FLORES AG RIBAS F ANGLADA A VILARO J ORTA C VILAMALA A BAUCELLS J CLEMENTE C ROMANS F PUIG T BISBE J GUARDIOLA JJ BALLESTER F PUIG MT MANONELLES A ROMEU V GALVANY J SARDA N LUNA J JIMENEZ J CERRILLO A VICIOLA M GESTAL JJ ARROJO F CAL ML SOUTO V LOPEZ JL URIEL B BLANCO A CUETO M PEREIRA MJ CERDA T QUINTAS JC BELIO C LIZAN M PAEZ JMG GOMEZ P BLANCO MA GOMEZ J VICENTE JA GORRICHO BP JIMENEZ JL",SUAREZ,"SANCHEZ S CHAVES F VALLS V GUTIERREZ ML BOTIA F PIQUERAS J MAS A DEJALON JG FERRERES L VARO J NOGUEIRA JM SANTOS M ASENSI F PAYA JS CERVELLO S ZANON VC MONTE CG OLTRA C NAVARRO JF AREVALO JM NOVALES JL ELOSEGUI ME MARTIN G CARRANDI B ELORDUY L GOMEZ H
Citation: J. Rossello et al., THE PREVALENCE OF THE USE OF URINARY CATH ETERIZATION SYSTEMS IN SPANISH HOSPITALS, Medicina Clinica, 105(3), 1995, pp. 81-84
DEEP-LEVEL TRANSIENT SPECTROSCOPY AND ELECTRICAL CHARACTERIZATION OF ION-IMPLANTED P-N-JUNCTIONS INTO UNDOPED INP
Authors: MARTIN JM GARCIA S MARTIL I GONZALEZDIAZ G CASTAN E DUENAS S
Citation: Jm. Martin et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY AND ELECTRICAL CHARACTERIZATION OF ION-IMPLANTED P-N-JUNCTIONS INTO UNDOPED INP, Journal of applied physics, 78(9), 1995, pp. 5325-5330
CHARACTERIZATION OF THE DAMAGE-INDUCED IN BORON-IMPLANTED AND RTA ANNEALED SILICON BY THE CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE
Authors: DUENAS S CASTAN E ENRIQUEZ L BARBOLLA J MONTSERRAT J LORATAMAYO E
Citation: S. Duenas et al., CHARACTERIZATION OF THE DAMAGE-INDUCED IN BORON-IMPLANTED AND RTA ANNEALED SILICON BY THE CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE, Semiconductor science and technology, 9(9), 1994, pp. 1637-1648
GRANULOCYTE-MACROPHAGE COLONY-STIMULATING FACTOR (GM-CSF) TO ATTENUATE THE HEMATOLOGICAL TOXICITY OF PHASE-II INDUCTION OF ADULT ACUTE LYMPHOBLASTIC-LEUKEMIA (ALL)
Authors: REYNOSO EE DUENAS S TEXCOCANO J ESCOBAR MC SOBREVILLA PJ
Citation: Ee. Reynoso et al., GRANULOCYTE-MACROPHAGE COLONY-STIMULATING FACTOR (GM-CSF) TO ATTENUATE THE HEMATOLOGICAL TOXICITY OF PHASE-II INDUCTION OF ADULT ACUTE LYMPHOBLASTIC-LEUKEMIA (ALL), Blood, 82(10), 1993, pp. 10000546-10000546
Risultati: 1-14 |