Authors: Kogler, R Eichhorn, F Mucklich, A Danilin, AB Skorupa, W

Citation: R. Kogler et al., Distribution of gettering centres at a buried amorphous layer in silicon, NUCL INST B, 148(1-4), 1999, pp. 334-339

Authors: Kogler, R Yankov, RA Posselt, M Danilin, AB Skorupa, W

Citation: R. Kogler et al., Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile, NUCL INST B, 147(1-4), 1999, pp. 96-100

Authors: Smirnov, VK Kibalov, DS Krivelevich, SA Lepshin, PA Potapov, EV Yankov, RA Skorupa, W Makarov, VV Danilin, AB

Citation: Vk. Smirnov et al., Wave-ordered structures formed on SOI wafers by reactive ion beams, NUCL INST B, 147(1-4), 1999, pp. 310-315

Authors: Bachurin, VI Churilov, AB Potapov, EV Smirnov, VK Makarov, VV Danilin, AB

Citation: Vi. Bachurin et al., Formation of thin silicon nitride layers on Si by low energy N-2(+) ion bombardment, NUCL INST B, 147(1-4), 1999, pp. 316-319

Authors: Belogorokhov, AI Bublik, VT Scherbachev, KD Parkhomenko, YN Makarov, VV Danilin, AB

Citation: Ai. Belogorokhov et al., Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon, NUCL INST B, 147(1-4), 1999, pp. 320-326