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Results:
1-25
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Results: 25
Authors:
Lin, CK
Dapkus, PD
Citation: Ck. Lin et Pd. Dapkus, Uniform wafer-bonded oxide-confined bottom-emitting 850-nm VCSEL arrays onsapphire substrates, IEEE PHOTON, 13(4), 2001, pp. 263-265
Authors:
Burger, JP
Steier, WH
Dubovitsky, S
Tishinin, D
Uppal, K
Dapkus, PD
Citation: Jp. Burger et al., An optical filter based on carrier nonlinearities for optical RF channelizing and spectrum analysis, IEEE PHOTON, 13(3), 2001, pp. 224-226
Authors:
Ryu, SW
Dapkus, PD
Citation: Sw. Ryu et Pd. Dapkus, Highly strained InGaAs QW VCSEL with lasing wavelength at 1.22 mu m, ELECTR LETT, 37(3), 2001, pp. 177-178
Authors:
Jeong, WG
Dapkus, PD
Lee, UH
Yim, JS
Lee, D
Lee, BT
Citation: Wg. Jeong et al., Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots, APPL PHYS L, 78(9), 2001, pp. 1171-1173
Authors:
Painter, O
Husain, A
Scherer, A
Lee, PT
Kim, I
O'Brien, JD
Dapkus, PD
Citation: O. Painter et al., Lithographic tuning of a two-dimensional photonic crystal laser array, IEEE PHOTON, 12(9), 2000, pp. 1126-1128
Authors:
Zhang, X
Dapkus, PD
Rich, DH
Kim, I
Kobayashi, JT
Kobayashi, NP
Citation: X. Zhang et al., InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN, J ELEC MAT, 29(1), 2000, pp. 10-14
Authors:
Ryu, SW
Dapkus, PD
Citation: Sw. Ryu et Pd. Dapkus, Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates, ELECTR LETT, 36(16), 2000, pp. 1387-1388
Authors:
Zhang, X
Li, RR
Dapkus, PD
Rich, DH
Citation: X. Zhang et al., Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on asparse GaN nucleation technique, APPL PHYS L, 77(14), 2000, pp. 2213-2215
Authors:
Zhang, X
Dapkus, PD
Rich, DH
Citation: X. Zhang et al., Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation, APPL PHYS L, 77(10), 2000, pp. 1496-1498
Authors:
Li, RR
Dapkus, PD
Thompson, ME
Jeong, WG
Harrison, C
Chaikin, PM
Register, RA
Adamson, DH
Citation: Rr. Li et al., Dense arrays of ordered GaAs nanostructures by selective area growth on substrates patterned by block copolymer lithography, APPL PHYS L, 76(13), 2000, pp. 1689-1691
Authors:
Bond, AE
Dapkus, PD
O'Brien, JD
Citation: Ae. Bond et al., Design of low-loss single-mode vertical-cavity surface-emitting lasers, IEEE S T QU, 5(3), 1999, pp. 574-581
Authors:
Lin, CK
Ryu, SW
Choi, WJ
Dapkus, PD
Citation: Ck. Lin et al., Wafer-bonded bottom-emitting 850-nm VCSEL's on GaP substrates, IEEE PHOTON, 11(8), 1999, pp. 937-939
Authors:
Tishinin, DV
Dapkus, PD
Bond, AE
Kim, I
Lin, CK
O'Brien, J
Citation: Dv. Tishinin et al., Vertical resonant couplers with precise coupling efficiency control fabricated by wafer bonding, IEEE PHOTON, 11(8), 1999, pp. 1003-1005
Authors:
Choi, WJ
Dapkus, PD
Citation: Wj. Choi et Pd. Dapkus, Self-defined AlAs oxide-current-aperture buried-heterostructure ridge waveguide InGaAs single-quantum-well diode laser, IEEE PHOTON, 11(7), 1999, pp. 773-775
Authors:
Bond, AE
Dapkus, PD
O'Brien, JD
Citation: Ae. Bond et al., Aperture dependent loss analysis in vertical-cavity surface-emitting lasers, IEEE PHOTON, 11(4), 1999, pp. 397-399
Authors:
Lin, CK
Ryu, SW
Dapkus, PD
Citation: Ck. Lin et al., High-performance wafer-bonded bottom-emitting 850-nm VCSEL's on undoped GaP and sapphire substrates, IEEE PHOTON, 11(12), 1999, pp. 1542-1544
Authors:
Painter, OJ
Husain, A
Scherer, A
O'Brien, JD
Kim, I
Dapkus, PD
Citation: Oj. Painter et al., Room temperature photonic crystal defect lasers at near-infrared wavelengths in InGaAsP, J LIGHTW T, 17(11), 1999, pp. 2082-2088
Authors:
Painter, O
Lee, RK
Scherer, A
Yariv, A
O'Brien, JD
Dapkus, PD
Kim, I
Citation: O. Painter et al., Two-dimensional photonic band-gap defect mode laser, SCIENCE, 284(5421), 1999, pp. 1819-1821
Authors:
Thiyagarajan, SMK
Cohen, DA
Levi, AFJ
Ryu, S
Li, R
Dapkus, PD
Citation: Smk. Thiyagarajan et al., Continuous room-temperature operation of microdisk laser diodes, ELECTR LETT, 35(15), 1999, pp. 1252-1254
Authors:
Kobayashi, NP
Kobayashi, JT
Zhang, XG
Dapkus, PD
Rich, DH
Citation: Np. Kobayashi et al., Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate, APPL PHYS L, 74(19), 1999, pp. 2836-2838
Authors:
Hoanca, B
Dubovitsky, S
Zhu, DXX
Sawchuk, AA
Steier, WH
Dapkus, PD
Citation: B. Hoanca et al., All-optical routing using wavelength recognizing switches, J LIGHTW T, 16(12), 1998, pp. 2243-2254
Authors:
Kim, I
Chang, DG
Dapkus, PD
Citation: I. Kim et al., Growth of InGaAsP in a stagnation flow vertical reactor using TBP and TBA, J CRYST GR, 195(1-4), 1998, pp. 138-143
Authors:
Kobayashi, JT
Kobayashi, NP
Zhang, X
Dapkus, PD
Rich, DH
Citation: Jt. Kobayashi et al., Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD, J CRYST GR, 195(1-4), 1998, pp. 252-257
Authors:
Choi, WJ
Dapkus, PD
Citation: Wj. Choi et Pd. Dapkus, Selective growth and regrowth of high Al content AlGaAs for use in BH lasers, J CRYST GR, 195(1-4), 1998, pp. 495-502
Authors:
Thiyagarajan, SMK
Levi, AFJ
Lin, CK
Kim, I
Dapkus, PD
Pearton, SJ
Citation: Smk. Thiyagarajan et al., Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers, ELECTR LETT, 34(24), 1998, pp. 2333-2334
Risultati:
1-25
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