AAAAAA
Results:
1-15
|
Results: 15
Authors:
Vamvakas, VE
Berjoan, R
Schamm, S
Davazoglou, D
Vahlas, C
Citation: Ve. Vamvakas et al., Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures, J PHYS IV, 11(PR3), 2001, pp. 231-238
Authors:
Davazoglou, D
Kouvatsos, DN
Valamontes, E
Citation: D. Davazoglou et al., Influence of texture on the absorption threshold of LPCVD silicon films, J PHYS IV, 11(PR3), 2001, pp. 1029-1036
Authors:
Kouvatsos, DN
Vamvakas, VE
Davazoglou, D
Citation: Dn. Kouvatsos et al., Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOS, J PHYS IV, 11(PR3), 2001, pp. 1037-1044
Authors:
Magoulianti, E
Beltsios, K
Davazoglou, D
Kanellopoulos, N
Citation: E. Magoulianti et al., CVD modifications of porous Vycor silica for gas separation and sensor applications, J PHYS IV, 11(PR3), 2001, pp. 1191-1196
Authors:
Gleizes, AN
Vidal, S
Davazoglou, D
Citation: An. Gleizes et al., Fabrication of fine copper lines on AZ 5214 (TM) patterned silicon substrates by selective chemical vapor deposition, J PHYS IV, 11(PR3), 2001, pp. 1197-1201
Authors:
Davazoglou, D
Vahlas, C
Citation: D. Davazoglou et C. Vahlas, EUROCVD 13 - Thirteenth European Conference on Chemical Vapor Deposition -Glyfada, Athens, Greece - August 26-31, 2001, J PHYS IV, 11(PR3), 2001, pp. V-VII
Authors:
Davazoglou, D
Vidal, S
Gleizes, A
Citation: D. Davazoglou et al., Selective chemical vapor deposition of copper on AZ 5214 (TM)-patterned silicon substrates, J VAC SCI B, 19(3), 2001, pp. 759-761
Authors:
Davazoglou, D
Dritsas, T
Citation: D. Davazoglou et T. Dritsas, Fabrication and calibration of a gas sensor based on chemically vapor deposited WO3 films on silicon substrates Application to H-2 sensing, SENS ACTU-B, 77(1-2), 2001, pp. 359-362
Authors:
Vidal, S
Gleizes, A
Davazoglou, D
Citation: S. Vidal et al., Fabrication of fine copper lines by selective chemical vapor deposition onsilicon substrates, MICROEL ENG, 55(1-4), 2001, pp. 285-290
Authors:
Davazoglou, D
Citation: D. Davazoglou, Initial stages of growth of LPCVD polysilicon films. Effect of the surface"ageing", J PHYS IV, 9(P8), 1999, pp. 893-900
Authors:
Davazoglou, D
Citation: D. Davazoglou, Optical properties of ultra-thin low pressure chemically vapor deposited silicon films, J PHYS IV, 9(P8), 1999, pp. 1075-1082
Authors:
Davazoglou, D
Citation: D. Davazoglou, CVD activities in Greece, CHEM VAPOR, 5(3), 1999, pp. 99
Authors:
Davazoglou, D
Vamvakas, VE
Citation: D. Davazoglou et Ve. Vamvakas, Optical dispersion analysis within the IR range of thermally grown and TEOS deposited SiO2 films, MICROEL REL, 39(2), 1999, pp. 285-289
Authors:
Vahlas, C
Vamvakas, VE
Davazoglou, D
Citation: C. Vahlas et al., Low pressure chemical vapor deposition from TEOS-NH3 mixtures: thermochemical study of the process considering kinetic data, MICROEL REL, 39(2), 1999, pp. 303-309
Authors:
Davazoglou, D
Citation: D. Davazoglou, Dielectric properties of very thin low pressure chemically vapor depositedsilicon films, J APPL PHYS, 85(7), 1999, pp. 3819-3823
Risultati:
1-15
|