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Results: 26-50/68
Authors:
Edwards, NV
Bremser, MD
Batchelor, AD
Buyanova, IA
Madsen, LD
Yoo, SD
Welhkamp, T
Wilmers, K
Cobet, C
Esser, N
Davis, RF
Aspnes, DE
Monemar, B
Citation: Nv. Edwards et al., Optical characterization of wide bandgap semiconductors, THIN SOL FI, 364(1-2), 2000, pp. 98-106
Authors:
Liaw, HM
Doyle, R
Fejes, PL
Zollner, S
Konkar, A
Linthicum, KJ
Gehrke, T
Davis, RF
Citation: Hm. Liaw et al., Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates, SOL ST ELEC, 44(4), 2000, pp. 747-755
Authors:
Huot, Y
Jeffrey, WH
Davis, RF
Cullen, JJ
Citation: Y. Huot et al., Damage to DNA in bacterioplankton: A model of damage by ultraviolet radiation and its repair as influenced by vertical mixing, PHOTOCHEM P, 72(1), 2000, pp. 62-74
Authors:
Kuhn, PS
Browman, HI
Davis, RF
Cullen, JJ
McArthur, BL
Citation: Ps. Kuhn et al., Modeling the effects of ultraviolet radiation on embryos of Calanus finmarchicus and Atlantic cod (Gadus morhua) in a mixing environment, LIMN OCEAN, 45(8), 2000, pp. 1797-1806
Authors:
Davis, RF
Baird, RE
McNeill, RD
Citation: Rf. Davis et al., Efficacy of cotton root destruction and winter cover crops for suppressionof Hoplolaimus columbus, J NEMATOL, 32(4), 2000, pp. 550-555
Authors:
Davis, RF
Timper, P
Citation: Rf. Davis et P. Timper, Resistance in selected corn hybrids to Meloidogyne arenaria and M-incognita, J NEMATOL, 32(4), 2000, pp. 633-640
Authors:
Balkas, CM
Sitar, Z
Bergman, L
Shmagin, IK
Muth, JF
Kolbas, R
Nemanich, RJ
Davis, RF
Citation: Cm. Balkas et al., Growth and characterization of GaN single crystals, J CRYST GR, 208(1-4), 2000, pp. 100-106
Authors:
Collazo, R
Schlesser, R
Roskowski, A
Davis, RF
Sitar, Z
Citation: R. Collazo et al., Hot electron transport in AlN, J APPL PHYS, 88(10), 2000, pp. 5865-5869
Authors:
Ronning, C
Dalmer, M
Uhrmacher, M
Restle, M
Vetter, U
Ziegeler, L
Hofsass, H
Gehrke, T
Jarrendahl, K
Davis, RF
Citation: C. Ronning et al., Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery, J APPL PHYS, 87(5), 2000, pp. 2149-2157
Authors:
Hanser, AD
Nam, OH
Bremser, MD
Thomson, DB
Gehrke, T
Zheleva, TS
Davis, RF
Citation: Ad. Hanser et al., Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN, DIAM RELAT, 8(2-5), 1999, pp. 288-294
Authors:
Danielsson, E
Zetterling, CM
Ostling, M
Breitholtz, B
Linthicum, K
Thomson, DB
Nam, OH
Davis, RF
Citation: E. Danielsson et al., Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes, MAT SCI E B, 61-2, 1999, pp. 320-324
Authors:
Smith, LL
Davis, RF
Liu, RJ
Kim, MJ
Carpenter, RW
Citation: Ll. Smith et al., Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN, J MATER RES, 14(3), 1999, pp. 1032-1038
Authors:
Rossow, U
Aspnes, DE
Ambacher, O
Cimalla, V
Edwards, NV
Bremser, M
Davis, RF
Schaefer, JA
Stutzmann, M
Citation: U. Rossow et al., Reflectance difference spectroscopy characterization of AlxGa1-xN-compoundlayers, PHYS ST S-B, 216(1), 1999, pp. 215-220
Authors:
Zheleva, TS
Smith, SA
Thomson, DB
Linthicum, KJ
Rajagopal, P
Davis, RF
Citation: Ts. Zheleva et al., Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films, J ELEC MAT, 28(4), 1999, pp. L5-L8
Authors:
King, SW
Davis, RF
Ronning, C
Nemanich, RJ
Citation: Sw. King et al., Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface, J ELEC MAT, 28(12), 1999, pp. L34-L37
Authors:
Gruss, KA
Davis, RF
Citation: Ka. Gruss et Rf. Davis, Adhesion measurement of zirconium nitride and amorphous silicon carbide coatings to nickel and titanium alloys, SURF COAT, 114(2-3), 1999, pp. 156-168
Authors:
Nemanich, RJ
English, SL
Hartman, JD
Sowers, AT
Ward, BL
Ade, H
Davis, RF
Citation: Rj. Nemanich et al., Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy, APPL SURF S, 146(1-4), 1999, pp. 287-294
Authors:
Buyanova, IA
Wagner, M
Chen, WM
Edwards, NV
Monemar, B
Lindstrom, JL
Bremser, MD
Davis, RF
Amano, H
Akasaki, I
Citation: Ia. Buyanova et al., Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride, PHYS REV B, 60(3), 1999, pp. 1746-1751
Authors:
Chao, YC
Stagarescu, CB
Downes, JE
Ryan, P
Smith, KE
Hanser, D
Bremser, MD
Davis, RF
Citation: Yc. Chao et al., Observation of highly dispersive surface states on GaN(0001)1x1, PHYS REV B, 59(24), 1999, pp. R15586-R15589
Authors:
Bergman, L
Alexson, D
Murphy, PL
Nemanich, RJ
Dutta, M
Stroscio, MA
Balkas, C
Shin, H
Davis, RF
Citation: L. Bergman et al., Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure, PHYS REV B, 59(20), 1999, pp. 12977-12982
Authors:
Pavlovska, A
Torres, VM
Edwards, JL
Bauer, E
Smith, DJ
Doak, RB
Tsong, IST
Thomson, DB
Davis, RF
Citation: A. Pavlovska et al., Homoepitaxial GaN layers studied by low-energy electron microscopy, atomicforce microscopy and transmission electron microscopy, PHYS ST S-A, 176(1), 1999, pp. 469-473
Authors:
Therrien, R
Lucovsky, G
Davis, RF
Citation: R. Therrien et al., Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism forlow defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces, PHYS ST S-A, 176(1), 1999, pp. 793-796
Authors:
Kouwenberg, JHM
Browman, HI
Cullen, JJ
Davis, RF
St-Pierre, JF
Runge, JA
Citation: Jhm. Kouwenberg et al., Biological weighting of ultraviolet (280-400 nm) induced mortality in marine zooplankton and fish. I. Atlantic cod (Gadus morhua) eggs, MARINE BIOL, 134(2), 1999, pp. 269-284
Authors:
Kouwenberg, JHM
Browman, HI
Runge, JA
Cullen, JJ
Davis, RF
St-Pierre, JF
Citation: Jhm. Kouwenberg et al., Biological weighting of ultraviolet (280-400 nm) induced mortality in marine zooplankton and fish. II. Calanus finmarchicus (Copepoda) eggs, MARINE BIOL, 134(2), 1999, pp. 285-293
Authors:
King, SW
Davis, RF
Ronning, C
Benjamin, MC
Nemanich, RJ
Citation: Sw. King et al., Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces, J APPL PHYS, 86(8), 1999, pp. 4483-4490