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Results:
1-10
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Results: 10
Authors:
Mereuta, A
Saint-Girons, G
Bouchoule, S
Sagnes, I
Alexandre, F
Le Roux, G
Decobert, J
Ougazzaden, A
Citation: A. Mereuta et al., (InGa)(NAs)/GaAs structures emitting in 1-1.6 mu m wavelength range, OPT MATER, 17(1-2), 2001, pp. 185-188
Authors:
Demiguel, S
Giraudet, L
Pagnod-Rossiaux, P
Boucherez, E
Jany, C
Carpentier, L
Coupe, V
Fock-Yee, S
Decobert, J
Devaux, F
Citation: S. Demiguel et al., Low-cost, polarisation independent, tapered photodiodes with bandwidth over 50GHz, ELECTR LETT, 37(8), 2001, pp. 516-518
Authors:
Giraudet, L
Harari, J
Magnin, V
Pagnod, P
Boucherez, E
Decobert, J
Bonnet-Gamard, J
Carpentier, D
Jany, C
Blache, F
Decoster, D
Citation: L. Giraudet et al., High speed evanescently coupled PIN photodiodes for hybridisation on silicon platform optimised with genetic algorithm, ELECTR LETT, 37(15), 2001, pp. 973-975
Authors:
Cavassilas, N
Aniel, F
Boucaud, P
Adde, R
Maher, H
Decobert, J
Scavennec, A
Citation: N. Cavassilas et al., Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor, J APPL PHYS, 87(5), 2000, pp. 2548-2552
Authors:
Mereuta, A
Bouchoule, S
Alexandre, F
Sagnes, I
Decobert, J
Ougazzaden, A
Citation: A. Mereuta et al., Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE, ELECTR LETT, 36(5), 2000, pp. 436-437
Authors:
Gautier-Levine, A
Teissier, R
Nezzari, A
Rao, E
Decobert, J
Pelouard, JL
Scavennec, A
Citation: A. Gautier-levine et al., Impact ionization in InAlAs/InP single channel heterojunction field effecttransistors, JPN J A P 2, 38(5B), 1999, pp. L560-L562
Authors:
Legay, P
Caillet, F
Decobert, J
Leprince, L
Le Roux, G
Quillec, M
Citation: P. Legay et al., Oxide confining layer on an InP substrate, J APPL PHYS, 85(4), 1999, pp. 2428-2430
Authors:
Maher, H
Decobert, J
Falcou, A
Le Pallec, M
Post, G
Nissim, YI
Scavennec, A
Citation: H. Maher et al., A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications, IEEE DEVICE, 46(1), 1999, pp. 32-37
Authors:
Ougazzaden, A
Bouchoule, S
Mereuta, A
Rao, EVK
Decobert, J
Citation: A. Ougazzaden et al., Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N-2 as carrier gas, ELECTR LETT, 35(6), 1999, pp. 474-475
Authors:
Decobert, J
Rondeau, G
Maher, H
Ladner, C
Falcou, A
Biblemont, S
Post, G
Citation: J. Decobert et al., Doping optimizations for InGaAs/InP composite channel HEMTs, J CRYST GR, 195(1-4), 1998, pp. 681-686
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