Authors: Degoli, E Ossicini, S

Citation: E. Degoli et S. Ossicini, Role of defects in Si/SiO2 quantum wells, OPT MATER, 17(1-2), 2001, pp. 95-98

Authors: Degoli, E Ossicini, S Barbato, D Luppi, M Pettenati, E

Citation: E. Degoli et al., Symmetry and passivation dependence of the optical properties of nanocrystalline silicon structures, MAT SCI E B, 69, 2000, pp. 444-448

Authors: Degoli, E Ossicini, S

Citation: E. Degoli et S. Ossicini, The electronic and optical properties of Si/SiO2 superlattices: role of confined and defect states, SURF SCI, 470(1-2), 2000, pp. 32-42

Authors: Degoli, E Luppi, M Ossicini, S

Citation: E. Degoli et al., From undulating Si quantum wires to Si quantum dots: A model for porous silicon, PHYS ST S-A, 182(1), 2000, pp. 301-306

Authors: Degoli, E Ossicini, S

Citation: E. Degoli et S. Ossicini, Optical properties of Si/CaF2 superlattices, J LUMINESC, 80(1-4), 1998, pp. 411-415