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Results: 1-16 |
Results: 16
Preparation and properties of dc-sputtered IrO2 and Ir thin films for oxygen barrier applications in advanced memory technology
Authors: Pinnow, CU Kasko, I Dehm, C Jobst, B Seibt, M Geyer, U
Citation: Cu. Pinnow et al., Preparation and properties of dc-sputtered IrO2 and Ir thin films for oxygen barrier applications in advanced memory technology, J VAC SCI B, 19(5), 2001, pp. 1857-1865
Relaxation effects and steady-state conduction in non-stoichiometric SBT films
Authors: Bachhofer, H Reisinger, H Schroeder, H Haneder, T Dehm, C Von Philipsborn, H Waser, R
Citation: H. Bachhofer et al., Relaxation effects and steady-state conduction in non-stoichiometric SBT films, INTEGR FERR, 33(1-4), 2001, pp. 245-252
Phase formation and crystal growth of Sr-Bi-Ta-O thin films grown by metalorganic chemical vapor deposition
Authors: Bachhofer, H von Philipsborn, H Hartner, W Dehm, C Jobst, B Kiendl, A Schroeder, H Waser, R
Citation: H. Bachhofer et al., Phase formation and crystal growth of Sr-Bi-Ta-O thin films grown by metalorganic chemical vapor deposition, J MATER RES, 16(10), 2001, pp. 2966-2973
Domain structure of (100) strontium bismuth tantalate (SBT) SrBi2Ta2O2 films
Authors: Zybill, CE Boubekeur, H Li, B Koch, F Schindler, G Dehm, C
Citation: Ce. Zybill et al., Domain structure of (100) strontium bismuth tantalate (SBT) SrBi2Ta2O2 films, THIN SOL FI, 386(1), 2001, pp. 59-67
FeRAM technology for high density applications
Authors: Mikolajick, T Dehm, C Hartner, W Kasko, I Kastner, MJ Nagel, N Moert, M Mazure, C
Citation: T. Mikolajick et al., FeRAM technology for high density applications, MICROEL REL, 41(7), 2001, pp. 947-950
Chemical mechanical polishing of iridium and iridium oxide for damascene processes
Authors: Mainka, G Beitel, G Schnabel, RF Saenger, A Dehm, C
Citation: G. Mainka et al., Chemical mechanical polishing of iridium and iridium oxide for damascene processes, J ELCHEM SO, 148(10), 2001, pp. G552-G558
Patterning of noble metal electrodes and oxygen barriers by CMP
Authors: Schnabel, RF Beitel, G Mainka, G Sanger, A Bosk, P Chen, Z Small, R Dehm, C
Citation: Rf. Schnabel et al., Patterning of noble metal electrodes and oxygen barriers by CMP, INTEGR FERR, 31(1-4), 2000, pp. 233-240
Integration of H-2 barriers for ferroelectric memories based on SrBi2Ta2O9(SBT)
Authors: Hartner, W Schindler, G Bosk, P Gabric, Z Kastner, M Beitel, G Mikolajick, T Dehm, C Mazure, C
Citation: W. Hartner et al., Integration of H-2 barriers for ferroelectric memories based on SrBi2Ta2O9(SBT), INTEGR FERR, 31(1-4), 2000, pp. 273-284
Degradation mechanisms of SrBi2Ta2O9 ferroelectric thin film capacitors during forming gas annealing
Authors: Hartner, W Bosk, P Schindler, G Schroeder, H Waser, R Dehm, C Mazure, C
Citation: W. Hartner et al., Degradation mechanisms of SrBi2Ta2O9 ferroelectric thin film capacitors during forming gas annealing, INTEGR FERR, 31(1-4), 2000, pp. 341-350
Low temperature process and thin SBT films for ferroelectric memory devices
Authors: Mort, M Schindler, G Hartner, W Kasko, I Kastner, MJ Mikolajick, T Dehm, C Waser, R
Citation: M. Mort et al., Low temperature process and thin SBT films for ferroelectric memory devices, INTEGR FERR, 30(1-4), 2000, pp. 235-244
Scanning probe microscopy - a tool for the investigation of high-k materials
Authors: Landau, SA Junghans, N Weiss, PA Kolbesen, BO Olbrich, A Schindler, G Hartner, W Hintermaier, F Dehm, C Mazure, C
Citation: Sa. Landau et al., Scanning probe microscopy - a tool for the investigation of high-k materials, APPL SURF S, 157(4), 2000, pp. 387-392
Aspects of barium contamination in high dielectric dynamic random access memories
Authors: Boubekeur, H Hopfner, J Mikolajick, T Dehm, C Frey, L Ryssel, H
Citation: H. Boubekeur et al., Aspects of barium contamination in high dielectric dynamic random access memories, J ELCHEM SO, 147(11), 2000, pp. 4297-4300
Influence of dry etching using argon on structural and electrical properties of crystalline and non-crystalline SrBi2Ta2O9 thin films
Authors: Hartner, W Schindler, G Weinrich, V Ahlstedt, M Schroeder, H Waser, R Dehm, C Mazure, C
Citation: W. Hartner et al., Influence of dry etching using argon on structural and electrical properties of crystalline and non-crystalline SrBi2Ta2O9 thin films, INTEGR FERR, 27(1-4), 1999, pp. 1257-1269
Review of SrBi2Ta2O9 thin films capacitor processing
Authors: Dehm, C Hartner, W Schindler, G Bergmann, R Hasler, B Kasko, I Kastner, M Schiele, M Weinrich, V Mazure, C
Citation: C. Dehm et al., Review of SrBi2Ta2O9 thin films capacitor processing, INTEGR FERR, 26(1-4), 1999, pp. 899-915
Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD)
Authors: Roeder, JF Hendrix, BC Hintermaier, F Desrochers, DA Baum, TH Bhandari, G Chappuis, M Van Buskirk, PC Dehm, C Fritsch, E Nagel, N Wendt, H Cerva, H Honlein, W Mazure, C
Citation: Jf. Roeder et al., Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD), J EUR CERAM, 19(6-7), 1999, pp. 1463-1466
A novel low-temperature (Ba,Sr)TiO3 (BST) process with Ti/TiN barrier for Gbit DRAM applications
Authors: Beitel, G Wendt, H Fritsch, E Weinrich, V Engelhardt, M Hasler, B Rohr, T Bergmann, R Scheler, U Malek, KH Nagel, N Gschwandtner, A Pamler, W Honlein, W Dehm, C Mazure, C
Citation: G. Beitel et al., A novel low-temperature (Ba,Sr)TiO3 (BST) process with Ti/TiN barrier for Gbit DRAM applications, MICROEL ENG, 48(1-4), 1999, pp. 299-302
Risultati: 1-16 |