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Results: 1-13 |
Results: 13
On transition temperatures in the plasticity and fracture of semiconductors
Authors: Pirouz, P Demenet, JL Hong, MH
Citation: P. Pirouz et al., On transition temperatures in the plasticity and fracture of semiconductors, PHIL MAG A, 81(5), 2001, pp. 1207-1227
Characterization of room-temperature plastic deformation Of beta-Si3N4 by atomic force microscopy and transmission electron microscopy
Authors: Milhet, X Girard, JC Demenet, JL Rabier, J
Citation: X. Milhet et al., Characterization of room-temperature plastic deformation Of beta-Si3N4 by atomic force microscopy and transmission electron microscopy, PHIL MAG L, 81(9), 2001, pp. 623-629
Deformation-induced dislocations in 15R-SiC grown by sublimation
Authors: Hong, MH Pirouz, P Chung, J Yoon, SY Demenet, JL Nishiguchi, T Nishino, S
Citation: Mh. Hong et al., Deformation-induced dislocations in 15R-SiC grown by sublimation, PHIL MAG L, 81(12), 2001, pp. 823-831
Plastic deformation of Si at low temperature under high confining pressure
Authors: Rabier, J Cordier, P Demenet, JL Garem, H
Citation: J. Rabier et al., Plastic deformation of Si at low temperature under high confining pressure, MAT SCI E A, 309, 2001, pp. 74-77
Plastic behavior of 4H-SiC single crystals deformed at low strain rates
Authors: Demenet, JL Hong, MH Pirouz, P
Citation: Jl. Demenet et al., Plastic behavior of 4H-SiC single crystals deformed at low strain rates, SCR MATER, 43(9), 2000, pp. 865-870
Intragranular plasticity of beta Si3N4 between 20 degrees C and 700 degrees C
Authors: Milhet, X Demenet, JL Rabier, J
Citation: X. Milhet et al., Intragranular plasticity of beta Si3N4 between 20 degrees C and 700 degrees C, J PHYS IV, 10(P6), 2000, pp. 165-169
Dislocation microstructures in Si plastically deformed at RT
Authors: Rabier, J Cordier, P Tondellier, T Demenet, JL Garem, H
Citation: J. Rabier et al., Dislocation microstructures in Si plastically deformed at RT, J PHYS-COND, 12(49), 2000, pp. 10059-10064
Low temperature, high stress plastic deformation of semiconductors: The silicon case
Authors: Rabier, J Demenet, JL
Citation: J. Rabier et Jl. Demenet, Low temperature, high stress plastic deformation of semiconductors: The silicon case, PHYS ST S-B, 222(1), 2000, pp. 63-74
Influence of dislocations on I-V characteristics of Schottky diodes prepared on n-type 6H-SiC
Authors: Barbot, JF Blanchard, C Demenet, JL
Citation: Jf. Barbot et al., Influence of dislocations on I-V characteristics of Schottky diodes prepared on n-type 6H-SiC, PHYS ST S-B, 222(1), 2000, pp. 159-167
Glide dislocations in beta silicon nitride
Authors: Milhet, X Demenet, JL Rabier, J
Citation: X. Milhet et al., Glide dislocations in beta silicon nitride, PHIL MAG L, 79(1), 1999, pp. 19-24
Partial dislocation source in InSb: A new mechanism
Authors: Branchu, S Pailloux, F Garem, H Rabier, J Demenet, JL
Citation: S. Branchu et al., Partial dislocation source in InSb: A new mechanism, PHYS ST S-A, 171(1), 1999, pp. 59-65
Electrical study of dislocated Si- and C-faces of n-type 6H-SiC
Authors: Demenet, JL Tillay, V Barbot, JF
Citation: Jl. Demenet et al., Electrical study of dislocated Si- and C-faces of n-type 6H-SiC, PHYS ST S-A, 171(1), 1999, pp. 319-324
Stacking faults and phase transformations in silicon nitride
Authors: Milhet, X Demenet, JL Rabier, J
Citation: X. Milhet et al., Stacking faults and phase transformations in silicon nitride, EPJ-APPL PH, 4(2), 1998, pp. 149-156
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