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Results: 1-8 |
Results: 8

Authors: DiMaria, DJ Stathis, JH
Citation: Dj. Dimaria et Jh. Stathis, Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films, J APPL PHYS, 89(9), 2001, pp. 5015-5024

Authors: Ielmini, D Spinelli, AS Lacaita, AL DiMaria, DJ Ghidini, G
Citation: D. Ielmini et al., A detailed investigation of the quantum yield experiment, IEEE DEVICE, 48(8), 2001, pp. 1696-1702

Authors: DiMaria, DJ
Citation: Dj. Dimaria, Defect generation in field-effect transistors under channel-hot-electron stress, J APPL PHYS, 87(12), 2000, pp. 8707-8715

Authors: DiMaria, DJ
Citation: Dj. Dimaria, Defect generation in ultrathin silicon dioxide films produced by anode hole injection, APPL PHYS L, 77(17), 2000, pp. 2716-2718

Authors: Stathis, JH DiMaria, DJ
Citation: Jh. Stathis et Dj. Dimaria, Oxide scaling limit for future logic and memory technology, MICROEL ENG, 48(1-4), 1999, pp. 395-401

Authors: DiMaria, DJ
Citation: Dj. Dimaria, Defect generation under substrate-hot-electron injection into ultrathin silicon dioxide layers, J APPL PHYS, 86(4), 1999, pp. 2100-2109

Authors: DiMaria, DJ
Citation: Dj. Dimaria, Electron energy dependence of metal-oxide-semiconductor degradation, APPL PHYS L, 75(16), 1999, pp. 2427-2428

Authors: DiMaria, DJ Stathis, JH
Citation: Dj. Dimaria et Jh. Stathis, Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films, APPL PHYS L, 74(12), 1999, pp. 1752-1754
Risultati: 1-8 |