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Results: 1-24 |
Results: 24
Systems administration
Authors: Skjellum, A Dimitrov, R Angaluri, SV Lifka, D Coulouris, G Uthayopas, P Scott, SL Eskicioglu, R
Citation: A. Skjellum et al., Systems administration, INT J HI PE, 15(2), 2001, pp. 143-161
Photoluminescence of Ga-face AlGaN/GaN single heterostructures
Authors: Martinez-Criado, G Cros, A Cantarero, A Miskys, CR Ambacher, O Dimitrov, R Stutzmann, M
Citation: G. Martinez-criado et al., Photoluminescence of Ga-face AlGaN/GaN single heterostructures, MAT SCI E B, 82(1-3), 2001, pp. 200-202
Mossbauer spectroscopy study on the oxidation of sulfide zinc concentrate rich in marmatite
Authors: Nikolov, S Boyanov, B Moldovanska, N Dimitrov, R
Citation: S. Nikolov et al., Mossbauer spectroscopy study on the oxidation of sulfide zinc concentrate rich in marmatite, THERMOC ACT, 380(1), 2001, pp. 37-41
Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
Authors: Martinez-Criado, G Cros, A Cantarero, A Ambacher, O Miskys, CR Dimitrov, R Stutzmann, M Smart, J Shealy, JR
Citation: G. Martinez-criado et al., Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures, J APPL PHYS, 90(9), 2001, pp. 4735-4740
Undoped AlGaN/GaN HEMTs for microwave power amplification
Authors: Eastman, LF Tilak, V Smart, J Green, BM Chumbes, EM Dimitrov, R Kim, H Ambacher, OS Weimann, N Prunty, T Murphy, M Schaff, WJ Shealy, JR
Citation: Lf. Eastman et al., Undoped AlGaN/GaN HEMTs for microwave power amplification, IEEE DEVICE, 48(3), 2001, pp. 479-485
Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures
Authors: Schuck, PJ Mason, MD Grober, RD Ambacher, O Lima, AP Miskys, C Dimitrov, R Stutzmann, M
Citation: Pj. Schuck et al., Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures, APPL PHYS L, 79(7), 2001, pp. 952-954
Electron affinity of AlxGa1-xN(0001) surfaces
Authors: Grabowski, SP Schneider, M Nienhaus, H Monch, W Dimitrov, R Ambacher, O Stutzmann, M
Citation: Sp. Grabowski et al., Electron affinity of AlxGa1-xN(0001) surfaces, APPL PHYS L, 78(17), 2001, pp. 2503-2505
Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors
Authors: Kaiser, S Jakob, M Zweck, J Gebhardt, W Ambacher, O Dimitrov, R Schremer, AT Smart, JA Shealy, JR
Citation: S. Kaiser et al., Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors, J VAC SCI B, 18(2), 2000, pp. 733-740
DX-behavior of Si in AlN
Authors: Zeisel, R Bayerl, MW Goennenwein, STB Dimitrov, R Ambacher, O Brandt, MS Stutzmann, M
Citation: R. Zeisel et al., DX-behavior of Si in AlN, PHYS REV B, 61(24), 2000, pp. R16283-R16286
Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors
Authors: Dimitrov, R Tilak, V Yeo, W Green, B Kim, H Smart, J Chumbes, E Shealy, JR Schaff, W Eastman, LF Miskys, C Ambacher, O Stutzmann, M
Citation: R. Dimitrov et al., Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors, SOL ST ELEC, 44(8), 2000, pp. 1361-1365
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
Authors: Martinez-Criado, G Cros, A Cantarero, A Dimitrov, R Ambacher, O Stutzmann, M
Citation: G. Martinez-criado et al., Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition, J APPL PHYS, 88(6), 2000, pp. 3470-3478
Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire
Authors: Dimitrov, R Murphy, M Smart, J Schaff, W Shealy, JR Eastman, LF Ambacher, O Stutzmann, M
Citation: R. Dimitrov et al., Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire, J APPL PHYS, 87(7), 2000, pp. 3375-3380
Effects of phase separation and decomposition on the minority carrier diffusion length in AlxGa1-xN films
Authors: Cremades, A Albrecht, M Krinke, J Dimitrov, R Stutzmann, M Strunk, HP
Citation: A. Cremades et al., Effects of phase separation and decomposition on the minority carrier diffusion length in AlxGa1-xN films, J APPL PHYS, 87(5), 2000, pp. 2357-2362
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Authors: Ambacher, O Foutz, B Smart, J Shealy, JR Weimann, NG Chu, K Murphy, M Sierakowski, AJ Schaff, WJ Eastman, LF Dimitrov, R Mitchell, A Stutzmann, M
Citation: O. Ambacher et al., Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, J APPL PHYS, 87(1), 2000, pp. 334-344
On the structure of poly-epsilon-caprolactams, obtained with bifunctional N-carbamyl derivatives of lactams
Authors: Mateva, R Petrov, P Rousseva, S Dimitrov, R Zolova, G
Citation: R. Mateva et al., On the structure of poly-epsilon-caprolactams, obtained with bifunctional N-carbamyl derivatives of lactams, EUR POLYM J, 36(4), 2000, pp. 813-821
Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1 degrees towards < 211 > InP substrates
Authors: Yeo, W Dimitrov, R Schaff, WJ Eastman, LF
Citation: W. Yeo et al., Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1 degrees towards < 211 > InP substrates, APPL PHYS L, 77(26), 2000, pp. 4292-4294
The effect of As-4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates
Authors: Yeo, W Dimitrov, R Schaff, WJ Eastman, LF
Citation: W. Yeo et al., The effect of As-4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates, APPL PHYS L, 77(17), 2000, pp. 2764-2766
Comparison of N-face and Ga-face AlGaN/GaN-based high electron mobility transistors grown by plasma-induced molecular beam epitaxy
Authors: Dimitrov, R Mitchell, A Wittmer, L Ambacher, O Stutzmann, M Hilsenbeck, J Rieger, W
Citation: R. Dimitrov et al., Comparison of N-face and Ga-face AlGaN/GaN-based high electron mobility transistors grown by plasma-induced molecular beam epitaxy, JPN J A P 1, 38(9A), 1999, pp. 4962-4968
Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices
Authors: Ambacher, O Dimitrov, R Stutzmann, M Foutz, BE Murphy, MJ Smart, JA Shealy, JR Weimann, NG Chu, K Chumbes, M Green, B Sierakowski, AJ Schaff, WJ Eastman, LF
Citation: O. Ambacher et al., Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices, PHYS ST S-B, 216(1), 1999, pp. 381-389
Composition analysis using elastic recoil detection
Authors: Gorgens, L Dollinger, G Bergmaier, A Ambacher, O Eastman, L Smart, JA Shealy, JF Dimitrov, R Stutzmann, M Mitchell, A
Citation: L. Gorgens et al., Composition analysis using elastic recoil detection, PHYS ST S-B, 216(1), 1999, pp. 679-682
Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN
Authors: Wieser, N Ambacher, O Angerer, H Dimitrov, R Stutzmann, M Stritzker, B Lindner, JKN
Citation: N. Wieser et al., Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN, PHYS ST S-B, 216(1), 1999, pp. 807-811
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Authors: Ambacher, O Smart, J Shealy, JR Weimann, NG Chu, K Murphy, M Schaff, WJ Eastman, LF Dimitrov, R Wittmer, L Stutzmann, M Rieger, W Hilsenbeck, J
Citation: O. Ambacher et al., Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, J APPL PHYS, 85(6), 1999, pp. 3222-3233
High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy
Authors: Murphy, MJ Chu, K Wu, H Yeo, W Schaff, WJ Ambacher, O Eastman, LF Eustis, TJ Silcox, J Dimitrov, R Stutzmann, M
Citation: Mj. Murphy et al., High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 75(23), 1999, pp. 3653-3655
DTA and TG study of PbSO4 dissociation in the presence of solid fuels
Authors: Boyanov, B Dimitrov, R
Citation: B. Boyanov et R. Dimitrov, DTA and TG study of PbSO4 dissociation in the presence of solid fuels, THERMOC ACT, 322(1), 1998, pp. 69-75
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