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Results: 1-13 |
Results: 13
X-ray spectroscopic study of electronic structure of amorphous silicon andsilicyne
Authors: Mashin, AI Khokhlov, AF Domashevskaya, EP Terekhov, VA Mashin, NI
Citation: Ai. Mashin et al., X-ray spectroscopic study of electronic structure of amorphous silicon andsilicyne, SEMICONDUCT, 35(8), 2001, pp. 956-961
Determination of the phase composition of surface layers of porous siliconby ultrasoft X-ray spectroscopy and X-ray photoelectron spectroscopy techniques
Authors: Terekhov, VA Kashkarov, VM",Manukovskii,"Schukarev, AV Domashevskaya, EP
Citation: Va. Terekhov et al., Determination of the phase composition of surface layers of porous siliconby ultrasoft X-ray spectroscopy and X-ray photoelectron spectroscopy techniques, J ELEC SPEC, 114, 2001, pp. 895-900
XPS and XES emission investigations of d-p resonance in some copper chalcogenides
Authors: Domashevskaya, EP Gorbachev, VV Terekhov, VA Kashkarov, VM Panfilova, EV Shchukarev, AV
Citation: Ep. Domashevskaya et al., XPS and XES emission investigations of d-p resonance in some copper chalcogenides, J ELEC SPEC, 114, 2001, pp. 901-908
Combined photoreflectance/photoluminescence studies of the electronic properties of semiconductor surfaces
Authors: Kuz'menko, RV Ganzha, AV Domashevskaya, EP Hildebrandt, S Schreiber, J
Citation: Rv. Kuz'Menko et al., Combined photoreflectance/photoluminescence studies of the electronic properties of semiconductor surfaces, PHYS SOL ST, 42(12), 2000, pp. 2200-2203
Generalized multilayer model for the quantitative analysis of the electromodulation components of the electroreflectance and photoreflectance spectraof semiconductors in the region of the E-0 fundamental transition
Authors: Kuz'menko, RV Ganzha, AV Domashevskaya, EP Kircher, V Hildebrandt, S
Citation: Rv. Kuz'Menko et al., Generalized multilayer model for the quantitative analysis of the electromodulation components of the electroreflectance and photoreflectance spectraof semiconductors in the region of the E-0 fundamental transition, SEMICONDUCT, 34(9), 2000, pp. 1045-1051
Temperature dependence of residual stress in epitaxial GaAs/Si(100) films determined from photoreflectance spectroscopy data
Authors: Kuz'menko, RV Ganzha, AV Bochurova, OV Domashevskaya, EP Schreiber, J Hildebrandt, S Mo, S Peiner, E Schlachetzki, A
Citation: Rv. Kuz'Menko et al., Temperature dependence of residual stress in epitaxial GaAs/Si(100) films determined from photoreflectance spectroscopy data, SEMICONDUCT, 34(1), 2000, pp. 73-80
Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ ions
Authors: Golikova, OA Kuznetsov, AN Kudoyarova, VK Petrov, IN Domashevskaya, EP Terekhov, VA
Citation: Oa. Golikova et al., Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ ions, SEMICONDUCT, 34(1), 2000, pp. 87-91
Fractal conception of the structures of amorphous alloy in Re-Ta system
Authors: Popova, IA Savrasova, NA Domashevskaya, EP
Citation: Ia. Popova et al., Fractal conception of the structures of amorphous alloy in Re-Ta system, IAN FIZ, 64(9), 2000, pp. 1738-1743
Low-energy oscillations in the E-0 photoreflectance spectra of homoepitaxial n-GaAs/n(+)-GaAs Samples with n=10(15)-10(16) cm(-3) and n+ approximate to 10(18) cm(-3)
Authors: Kuz'menko, RV Ganzha, AV Domashevskaya, EP
Citation: Rv. Kuz'Menko et al., Low-energy oscillations in the E-0 photoreflectance spectra of homoepitaxial n-GaAs/n(+)-GaAs Samples with n=10(15)-10(16) cm(-3) and n+ approximate to 10(18) cm(-3), OPT SPECTRO, 89(4), 2000, pp. 549-555
Strain-induced photoreflectance spectra in the vicinity of the E-0 transition in GaAs/Si and InP/Si heterostructures
Authors: Kuz'menko, RV Ganzha, AV Bochurova, OV Domashevskaya, EP Schreiber, J Hildebrandt, S Mo, S Peiner, E
Citation: Rv. Kuz'Menko et al., Strain-induced photoreflectance spectra in the vicinity of the E-0 transition in GaAs/Si and InP/Si heterostructures, PHYS SOL ST, 41(4), 1999, pp. 654-659
Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor
Authors: Bezryadin, NN Domashevskaya, EP Kotov, GI Kuz'menko, RV Sumets, MP Arsent'ev, IN
Citation: Nn. Bezryadin et al., Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor, SEMICONDUCT, 33(6), 1999, pp. 665-667
Application of semiconductor gas sensors for medical diagnostics
Authors: Ryabtsev, SV Shaposhnick, AV Lukin, AN Domashevskaya, EP
Citation: Sv. Ryabtsev et al., Application of semiconductor gas sensors for medical diagnostics, SENS ACTU-B, 59(1), 1999, pp. 26-29
Specific features of electron structures of some thin film d-silicides
Authors: Domashevskaya, EP Yurakov, YA
Citation: Ep. Domashevskaya et Ya. Yurakov, Specific features of electron structures of some thin film d-silicides, J ELEC SPEC, 96(1-3), 1998, pp. 195-208
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