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Results: 1-18 |
Results: 18
Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy
Authors: Droopad, R Yu, Z Ramdani, J Hilt, L Curless, J Overgaard, C Edwards, JL Finder, J Eisenbeiser, K Ooms, W
Citation: R. Droopad et al., Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy, MAT SCI E B, 87(3), 2001, pp. 292-296
Band offset and structure of SrTiO3/Si(001) heterojunctions
Authors: Chambers, SA Liang, Y Yu, Z Droopad, R Ramdani, J
Citation: Sa. Chambers et al., Band offset and structure of SrTiO3/Si(001) heterojunctions, J VAC SCI A, 19(3), 2001, pp. 934-939
Comparative study of Sr and Ba adsorption on Si(100)
Authors: Hu, XM Yu, Z Curless, JA Droopad, R Eisenbeiser, K Edwards, JL Ooms, WJ Sarid, D
Citation: Xm. Hu et al., Comparative study of Sr and Ba adsorption on Si(100), APPL SURF S, 181(1-2), 2001, pp. 103-110
Epitaxial oxides on silicon grown by molecular beam epitaxy
Authors: Droopad, R Yu, ZY Ramdani, J Hilt, L Curless, J Overgaard, C Edwards, JL Finder, J Eisenbeiser, K Wang, J Kaushik, V Ngyuen, BY Ooms, B
Citation: R. Droopad et al., Epitaxial oxides on silicon grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 936-943
Photoemission from the Sr/Si(001) interface
Authors: Herrera-Gomez, A Aguirre-Tostado, FS Sun, Y Pianetta, P Yu, Z Marshall, D Droopad, R Spicer, WE
Citation: A. Herrera-gomez et al., Photoemission from the Sr/Si(001) interface, J APPL PHYS, 90(12), 2001, pp. 6070-6072
Epitaxial oxide thin films on Si(001)
Authors: Yu, Z Ramdani, J Curless, JA Overgaard, CD Finder, JM Droopad, R Eisenbeiser, KW Hallmark, JA Ooms, WJ Kaushik, VS
Citation: Z. Yu et al., Epitaxial oxide thin films on Si(001), J VAC SCI B, 18(4), 2000, pp. 2139-2145
Optical properties of bulk and thin-film SrTiO3 on Si and Pt
Authors: Zollner, S Demkov, AA Liu, R Fejes, PL Gregory, RB Alluri, P Curless, JA Yu, Z Ramdani, J Droopad, R Tiwald, TE Hilfiker, JN Woollam, JA
Citation: S. Zollner et al., Optical properties of bulk and thin-film SrTiO3 on Si and Pt, J VAC SCI B, 18(4), 2000, pp. 2242-2254
Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy
Authors: Yu, Z Ramdani, J Curless, JA Finder, JM Overgaard, CD Droopad, R Eisenbeiser, KW Hallmark, JA Ooms, WJ Conner, JR Kaushik, VS
Citation: Z. Yu et al., Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1653-1657
Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy
Authors: Ramdani, J Droopad, R Yu, Z Curless, JA Overgaard, CD Finder, J Eisenbeiser, K Hallmark, JA Ooms, WJ Kaushik, V Alluri, P Pietambaram, S
Citation: J. Ramdani et al., Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy, APPL SURF S, 159, 2000, pp. 127-133
Barium adsorption on Si(100)-(2 x 1) at room temperature: a bi-polar scanning tunneling microscopy study
Authors: Hu, X Yao, X Peterson, CA Sarid, D Yu, Z Wang, J Marshall, DS Curless, JA Ramdani, J Droopad, R Hallmark, JA Ooms, WJ
Citation: X. Hu et al., Barium adsorption on Si(100)-(2 x 1) at room temperature: a bi-polar scanning tunneling microscopy study, SURF SCI, 457(1-2), 2000, pp. L391-L396
The (3 x 2) phase of Ba adsorption on Si(001)-2 x 1
Authors: Hu, X Yao, X Peterson, CA Sarid, D Yu, Z Wang, J Marshall, DS Droopad, R Hallmark, JA Ooms, WJ
Citation: X. Hu et al., The (3 x 2) phase of Ba adsorption on Si(001)-2 x 1, SURF SCI, 445(2-3), 2000, pp. 256-266
Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions
Authors: Chambers, SA Liang, Y Yu, Z Droopad, R Ramdani, J Eisenbeiser, K
Citation: Sa. Chambers et al., Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions, APPL PHYS L, 77(11), 2000, pp. 1662-1664
Field effect transistors with SrTiO3 gate dielectric on Si
Authors: Eisenbeiser, K Finder, JM Yu, Z Ramdani, J Curless, JA Hallmark, JA Droopad, R Ooms, WJ Salem, L Bradshaw, S Overgaard, CD
Citation: K. Eisenbeiser et al., Field effect transistors with SrTiO3 gate dielectric on Si, APPL PHYS L, 76(10), 2000, pp. 1324-1326
Interface charge and nonradiative carrier recombination in Ga2O3-GaAs interface structures
Authors: Passlack, M Yu, Z Droopad, R Bowers, B Overgaard, C Abrokwah, J Kummel, AC
Citation: M. Passlack et al., Interface charge and nonradiative carrier recombination in Ga2O3-GaAs interface structures, J VAC SCI B, 17(1), 1999, pp. 49-52
Epitaxial BaTiO3 films on silicon for MFSFET applications
Authors: Hallmark, J Yu, ZY Droopad, R Ramdani, J Curless, J Overgaard, C Finder, J Marshall, D Wang, J Ooms, B
Citation: J. Hallmark et al., Epitaxial BaTiO3 films on silicon for MFSFET applications, INTEGR FERR, 27(1-4), 1999, pp. 1085-1094
Metamorphic InAlAs/InGaAs enhancement mode HEMT's on GaAs substrates
Authors: Eisenbeiser, K Droopad, R Huang, JH
Citation: K. Eisenbeiser et al., Metamorphic InAlAs/InGaAs enhancement mode HEMT's on GaAs substrates, IEEE ELEC D, 20(10), 1999, pp. 507-509
Initial stages of Ba adsorption on the Si(100)-(2x1) surface at room temperature
Authors: Yao, X Hu, XM Sarid, D Yu, Z Wang, J Marshall, DS Droopad, R Abrokwah, JK Hallmark, JA Ooms, WJ
Citation: X. Yao et al., Initial stages of Ba adsorption on the Si(100)-(2x1) surface at room temperature, PHYS REV B, 59(7), 1999, pp. 5115-5119
Phases of Ba adsorption on Si(100)-(2 x 1) studied by LEED and AES
Authors: Hu, XM Peterson, CA Sarid, D Yu, Z Wang, J Marshall, DS Droopad, R Hallmark, JA Ooms, WJ
Citation: Xm. Hu et al., Phases of Ba adsorption on Si(100)-(2 x 1) studied by LEED and AES, SURF SCI, 426(1), 1999, pp. 69-74
Risultati: 1-18 |