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Results: 1-25 | 26-50 | 51-61
Results: 1-25/61
Annealing behavior of luminescence from erbium-implanted GaN films
Authors: Zavada, JM Ellis, CJ Lin, JY Jiang, HX Seo, JT Hommerich, U Thaik, M Wilson, RG Grudowski, PA Dupuis, RD
Citation: Jm. Zavada et al., Annealing behavior of luminescence from erbium-implanted GaN films, MAT SCI E B, 81(1-3), 2001, pp. 127-131
Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors
Authors: Huang, JJ Hattendorf, M Feng, M Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Zhu, TG Kwon, HK Dupuis, RD
Citation: Jj. Huang et al., Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors, IEEE ELEC D, 22(4), 2001, pp. 157-159
Low-noise solar-blind AlxGa1-xN-based metal semiconductor-metal ultraviolet photodetectors
Authors: Li, T Lambert, DJH Beck, AL Collins, CJ Yang, B Wong, MM Chowdhury, U Dupuis, RD Campbell, JC
Citation: T. Li et al., Low-noise solar-blind AlxGa1-xN-based metal semiconductor-metal ultraviolet photodetectors, J ELEC MAT, 30(7), 2001, pp. 872-877
Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates
Authors: Ryou, JH Dupuis, RD Reddy, CV Narayanamurti, V Mathes, DT Hull, R Mintairov, A Merz, JL
Citation: Jh. Ryou et al., Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates, J ELEC MAT, 30(5), 2001, pp. 471-476
Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1-xN photodetector
Authors: Li, T Carrano, JC Eiting, CJ Grudowski, PA Lambert, DJH Kwon, HK Dupuis, RD Campbell, JC
Citation: T. Li et al., Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1-xN photodetector, FIBER IN OP, 20(2), 2001, pp. 125-131
Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition
Authors: Kwon, HK Eiting, CJ Lambert, DJH Shelton, BS Wong, MM Zhu, TG Dupuis, RD
Citation: Hk. Kwon et al., Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition, J APPL PHYS, 90(4), 2001, pp. 1817-1822
Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers
Authors: Shelton, BS Zhu, TG Lambert, DJH Dupuis, RD
Citation: Bs. Shelton et al., Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers, IEEE DEVICE, 48(8), 2001, pp. 1498-1502
Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition
Authors: Shelton, BS Lambert, DJH Huang, JJ Wong, MM Chowdhury, U Zhu, TG Kwon, HK Liliental-Weber, Z Benarama, M Feng, M Dupuis, RD
Citation: Bs. Shelton et al., Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition, IEEE DEVICE, 48(3), 2001, pp. 490-494
Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors
Authors: Li, T Lambert, DJH Wong, MM Collins, CJ Yang, B Beck, AL Chowdhury, U Dupuis, RD Campbell, JC
Citation: T. Li et al., Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors, IEEE J Q EL, 37(4), 2001, pp. 538-545
Room and low temperature study of common emitter current gain in AlGaN/GaNheterojunction bipolar transistors
Authors: Huang, JJ Caruth, D Feng, M Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Zhu, TG Kwon, HK Dupuis, RD
Citation: Jj. Huang et al., Room and low temperature study of common emitter current gain in AlGaN/GaNheterojunction bipolar transistors, ELECTR LETT, 37(6), 2001, pp. 393-395
AlGaN/AlGaN double-heterojunction ultraviolet light-emitting diodes grown by metal organic chemical vapour deposition
Authors: Wong, MM Denyszyn, JC Collins, CJ Chowdhury, U Zhu, TG Kim, KS Dupuis, RD
Citation: Mm. Wong et al., AlGaN/AlGaN double-heterojunction ultraviolet light-emitting diodes grown by metal organic chemical vapour deposition, ELECTR LETT, 37(19), 2001, pp. 1188-1190
Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN
Authors: Wraback, M Shen, H Carrano, JC Collins, CJ Campbell, JC Dupuis, RD Schurman, MJ Ferguson, IT
Citation: M. Wraback et al., Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN, APPL PHYS L, 79(9), 2001, pp. 1303-1305
Coupled InP quantum-dot InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructure diode laser operation
Authors: Walter, G Holonyak, N Ryou, JH Dupuis, RD
Citation: G. Walter et al., Coupled InP quantum-dot InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructure diode laser operation, APPL PHYS L, 79(20), 2001, pp. 3215-3217
Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructures
Authors: Walter, G Holonyak, N Ryou, JH Dupuis, RD
Citation: G. Walter et al., Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructures, APPL PHYS L, 79(13), 2001, pp. 1956-1958
Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition
Authors: Ryou, JH Dupuis, RD Walter, G Kellogg, DA Holonyak, N Mathes, DT Hull, R Reddy, CV Narayanamurti, V
Citation: Jh. Ryou et al., Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(26), 2001, pp. 4091-4093
High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grownby metalorganic chemical vapor deposition
Authors: Ryou, JH Dupuis, RD Mathes, DT Hull, R Reddy, CV Narayanamurti, V
Citation: Jh. Ryou et al., High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grownby metalorganic chemical vapor deposition, APPL PHYS L, 78(22), 2001, pp. 3526-3528
Low-noise photodetectors based on heterojunctions of AlGaN-GaN
Authors: Kuryatkov, VV Temkin, H Campbell, JC Dupuis, RD
Citation: Vv. Kuryatkov et al., Low-noise photodetectors based on heterojunctions of AlGaN-GaN, APPL PHYS L, 78(21), 2001, pp. 3340-3342
Ultrasmooth GaN etched surfaces using photoelectrochemical wet etching andan ultrasonic treatment
Authors: Shelton, BS Zhu, TG Wong, MM Kwon, HK Eiting, CJ Lambert, DJH Turini, SP Dupuis, RD
Citation: Bs. Shelton et al., Ultrasmooth GaN etched surfaces using photoelectrochemical wet etching andan ultrasonic treatment, EL SOLID ST, 3(2), 2000, pp. 87-89
Effect of the doping and the Al content on the microstructure and morphology of thin AlxGa1-xN layers grown by MOCVD.
Authors: Mazur, JH Benamara, M Liliental-Weber, Z Swider, W Washburn, J Eiting, CJ Dupuis, RD
Citation: Jh. Mazur et al., Effect of the doping and the Al content on the microstructure and morphology of thin AlxGa1-xN layers grown by MOCVD., MRS I J N S, 5, 2000, pp. NIL_252-NIL_257
Mg segregation, difficulties of P-doping in GaN
Authors: Liliental-Weber, Z Benamara, M Swider, W Washburn, J Grzegory, I Porowski, S Dupuis, RD Eiting, CJ
Citation: Z. Liliental-weber et al., Mg segregation, difficulties of P-doping in GaN, MRS I J N S, 5, 2000, pp. NIL_430-NIL_435
Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth
Authors: Wraback, M Shen, H Eiting, CJ Carrano, JC Dupuis, RD
Citation: M. Wraback et al., Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth, MRS I J N S, 5, 2000, pp. NIL_673-NIL_678
III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition
Authors: Dupuis, RD
Citation: Rd. Dupuis, III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition, IEEE S T QU, 6(6), 2000, pp. 1040-1050
Simulation of the electrical characteristics of AlGaN/GaN heterojunction bipolar transistors
Authors: Lambert, DJH Lin, DE Dupuis, RD
Citation: Djh. Lambert et al., Simulation of the electrical characteristics of AlGaN/GaN heterojunction bipolar transistors, SOL ST ELEC, 44(2), 2000, pp. 253-257
Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition
Authors: Kwon, HK Eiting, CJ Lambert, DJH Wong, MM Shelton, BS Zhu, TG Liliental-Weber, Z Benamura, M Dupuis, RD
Citation: Hk. Kwon et al., Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition, J CRYST GR, 221, 2000, pp. 240-245
Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition
Authors: Kwon, HK Eiting, CJ Lambert, DJH Shelton, BS Wong, MM Zhu, TG Dupuis, RD
Citation: Hk. Kwon et al., Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition, J CRYST GR, 221, 2000, pp. 362-367
Risultati: 1-25 | 26-50 | 51-61