Authors: Jouan, S Baudry, H Dutartre, D Fellous, C Laurens, M Lenoble, D Marty, M Monroy, A Perrotin, A Ribot, P Vincent, G Chantre, A

Citation: S. Jouan et al., Suppression of boron transient-enhanced diffusion in SiGeHBTs by a buried carbon layer, IEEE DEVICE, 48(8), 2001, pp. 1765-1769

Authors: Jurczak, M Skotnicki, T Gwoziecki, R Paoli, M Tormen, B Ribot, P Dutartre, D Monfray, S Galvier, J

Citation: M. Jurczak et al., Dielectric pockets - A new concept of the junctions for deca-nanometric CMOS devices, IEEE DEVICE, 48(8), 2001, pp. 1770-1775

Authors: Jurczak, M Skotnicki, T Paoli, M Tormen, B Martins, J Regolini, JL Dutartre, D Ribot, P Lenoble, D Pantel, R Monfray, S

Citation: M. Jurczak et al., Silicon-on-nothing (SON) - an innovative process for advanced CMOS, IEEE DEVICE, 47(11), 2000, pp. 2179-2187

Authors: Jouan, S Planche, R Baudry, H Ribot, P Chroboczek, JA Dutartre, D Gloria, D Laurens, M Llinares, P Marty, M Monroy, A Morin, C Pantel, R Perrotin, A de Pontcharra, J Regolini, JL Vincent, G Chantre, A

Citation: S. Jouan et al., A high-speed low 1/f noise SiGeHBT technology using epitaxially-aligned polysilicon emitters, IEEE DEVICE, 46(7), 1999, pp. 1525-1531

Authors: Jerier, P Dutartre, D

Citation: P. Jerier et D. Dutartre, Boron autodoping in single-wafer epitaxy of silicon at reduced pressure, J ELCHEM SO, 146(1), 1999, pp. 331-335