AAAAAA

   
Results: 1-11 |
Results: 11
Study of Zn diffusion in n-type GaSb by cathodoluminescence and scanning tunneling spectroscopy
Authors: Hidalgo, P Mendez, B Piqueras, J Dutta, PS
Citation: P. Hidalgo et al., Study of Zn diffusion in n-type GaSb by cathodoluminescence and scanning tunneling spectroscopy, MAT SCI E B, 80(1-3), 2001, pp. 125-129
Engineering phase formation thermo-chemistry for crystal growth of homogeneous ternary and quaternary III-V compound semiconductors from melts
Authors: Dutta, PS Miller, TR
Citation: Ps. Dutta et Tr. Miller, Engineering phase formation thermo-chemistry for crystal growth of homogeneous ternary and quaternary III-V compound semiconductors from melts, J ELEC MAT, 29(7), 2000, pp. 956-963
Segregation of Ga in Ge and InSb in GaSb
Authors: Dutta, PS Ostrogorsky, AG
Citation: Ps. Dutta et Ag. Ostrogorsky, Segregation of Ga in Ge and InSb in GaSb, J CRYST GR, 217(4), 2000, pp. 360-365
Effect of In doping in GaSb crystals studied by cathodoluminescence
Authors: Hidalgo, P Mendez, B Piqueras, J Dutta, PS Dieguez, E
Citation: P. Hidalgo et al., Effect of In doping in GaSb crystals studied by cathodoluminescence, SEMIC SCI T, 14(10), 1999, pp. 901-904
Scanning tunneling spectroscopy of transition-metal-doped GaSb
Authors: Hidalgo, P Mendez, B Piqueras, J Dutta, PS Dieguez, E
Citation: P. Hidalgo et al., Scanning tunneling spectroscopy of transition-metal-doped GaSb, PHYS REV B, 60(15), 1999, pp. 10613-10615
On the opposite domain nature of Er-doped lithium niobate crystals
Authors: Bermudez, V Serrano, MD Dutta, PS Dieguez, E
Citation: V. Bermudez et al., On the opposite domain nature of Er-doped lithium niobate crystals, SOL ST COMM, 109(9), 1999, pp. 605-609
Opposite domain formation in Er-doped LiNbO3 bulk crystals grown by the off-centered Czochralski technique
Authors: Bermudez, V Serrano, MD Dutta, PS Dieguez, E
Citation: V. Bermudez et al., Opposite domain formation in Er-doped LiNbO3 bulk crystals grown by the off-centered Czochralski technique, J CRYST GR, 203(1-2), 1999, pp. 179-185
Melt growth of quasi-binary (GaSb)(1-x)(InAs)(x) crystals
Authors: Dutta, PS Ostrogorsky, AG
Citation: Ps. Dutta et Ag. Ostrogorsky, Melt growth of quasi-binary (GaSb)(1-x)(InAs)(x) crystals, J CRYST GR, 199, 1999, pp. 384-389
Segregation of tellurium in GaSb single crystals and associated diffusion coefficient in the solute layer
Authors: Dutta, PS Ostrogorsky, AG
Citation: Ps. Dutta et Ag. Ostrogorsky, Segregation of tellurium in GaSb single crystals and associated diffusion coefficient in the solute layer, J CRYST GR, 197(4), 1999, pp. 749-754
Strong band gap narrowing in quasi-binary (GaSb)(1-x)(InAs)(x) crystals grown from melt
Authors: Dutta, PS Ostrogorsky, AG
Citation: Ps. Dutta et Ag. Ostrogorsky, Strong band gap narrowing in quasi-binary (GaSb)(1-x)(InAs)(x) crystals grown from melt, J CRYST GR, 197(1-2), 1999, pp. 1-6
Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies
Authors: Hidalgo, P Mendez, B Piqueras, J Dutta, PS Dieguez, E
Citation: P. Hidalgo et al., Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies, SOL ST COMM, 108(12), 1998, pp. 997-1000
Risultati: 1-11 |