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Results:
1-7
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Results: 7
Authors:
Zouhou, A
Vergnes, H
Duverneuil, P
Citation: A. Zouhou et al., Determination of electroless kinetic: a QCM study, MICROEL ENG, 56(1-2), 2001, pp. 177-180
Authors:
Vergnes, H
Duverneuil, P
Couderc, JP
Citation: H. Vergnes et al., A new technology for chemical vapor deposition reactors. Part One: Presentation and analysis of experimental results, CAN J CH EN, 78(4), 2000, pp. 793-802
Authors:
Vergnes, H
Duverneuil, P
Couderc, JP
Citation: H. Vergnes et al., new equipment technology for chemical vapor deposition - .2. Modelling of pure silicon desposition from silane and insitu phosphorus doped silicon, CAN J CH EN, 78(4), 2000, pp. 803-814
Authors:
Bertrand, N
Duverneuil, P
Amjoud, M
Maury, F
Citation: N. Bertrand et al., Chemical vapor deposition of tin oxide from SnEt4, J PHYS IV, 9(P8), 1999, pp. 651-657
Authors:
Foucher, L
Naudin, F
Duverneuil, P
Tixier, C
Desmaison, J
Citation: L. Foucher et al., Study of the precursor injection in a remote microwave PECVD reactor, J PHYS IV, 9(P8), 1999, pp. 141-148
Authors:
de Paola, E
Duverneuil, P
Langlais, A
Nguyen, M
Citation: E. De Paola et al., Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure, J PHYS IV, 9(P8), 1999, pp. 221-228
Authors:
Briand, D
Sarret, M
Kis-Sion, K
Mohammed-Brahim, T
Duverneuil, P
Citation: D. Briand et al., In situ doping of silicon deposited by LPCVD: pressure influence on dopantincorporation mechanisms, SEMIC SCI T, 14(2), 1999, pp. 173-180
Risultati:
1-7
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