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Results: 1-14 |
Results: 14
THEORETICAL-ANALYSIS OF THE BREAKDOWN VOLTAGE IN PSEUDOMORPHIC HFETS
Authors: EISENBEISER KW EAST JR HADDAD GI
Citation: Kw. Eisenbeiser et al., THEORETICAL-ANALYSIS OF THE BREAKDOWN VOLTAGE IN PSEUDOMORPHIC HFETS, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1778-1787
THEORETICAL AND EXPERIMENTAL DC CHARACTERIZATION OF INGAAS-BASED ABRUPT EMITTER HBTS
Authors: YANG K COWLES JC EAST JR HADDAD GI
Citation: K. Yang et al., THEORETICAL AND EXPERIMENTAL DC CHARACTERIZATION OF INGAAS-BASED ABRUPT EMITTER HBTS, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1047-1058
RECESSED-GATE INGAAS MESFETS WITH AN ALAS ETCH-STOP LAYER
Authors: LIAO MP EAST JR HADDAD GI
Citation: Mp. Liao et al., RECESSED-GATE INGAAS MESFETS WITH AN ALAS ETCH-STOP LAYER, Electronics Letters, 31(8), 1995, pp. 684-685
A NOVEL BIASED ANTI-PARALLEL SCHOTTKY DIODE STRUCTURE FOR SUBHARMONICMIXING
Authors: LEE TH CHI CY EAST JR REBEIZ GM HADDAD GI
Citation: Th. Lee et al., A NOVEL BIASED ANTI-PARALLEL SCHOTTKY DIODE STRUCTURE FOR SUBHARMONICMIXING, IEEE microwave and guided wave letters, 4(10), 1994, pp. 341-343
BUILT-IN BIAXIAL STRAIN DEPENDENCE OF GAMMA-X TRANSPORT IN GAAS INXAL1-XAS/GAAS PSEUDOMORPHIC HETEROJUNCTION BARRIERS (X=0, 0.03, AND 0.06)/
Authors: YANG K EAST JR HADDAD GI DRUMMOND TJ BRENNAN TM HAMMONS BE
Citation: K. Yang et al., BUILT-IN BIAXIAL STRAIN DEPENDENCE OF GAMMA-X TRANSPORT IN GAAS INXAL1-XAS/GAAS PSEUDOMORPHIC HETEROJUNCTION BARRIERS (X=0, 0.03, AND 0.06)/, Journal of applied physics, 76(12), 1994, pp. 7907-7914
THE FABRICATION AND PERFORMANCE OF PLANAR-DOPED BARRIER DIODES AS 200GHZ SUBHARMONICALLY PUMPED MIXERS
Authors: LEE TH EAST JR CHI CY REBEIZ GM DENGLER RJ MEHDI I SIEGEL PH HADDAD GI
Citation: Th. Lee et al., THE FABRICATION AND PERFORMANCE OF PLANAR-DOPED BARRIER DIODES AS 200GHZ SUBHARMONICALLY PUMPED MIXERS, IEEE transactions on microwave theory and techniques, 42(4), 1994, pp. 742-749
NUMERICAL STUDY ON THE INJECTION PERFORMANCE OF ALGAAS GAAS ABRUPT EMITTER HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: YANG KH EAST JR HADDAD GI
Citation: Kh. Yang et al., NUMERICAL STUDY ON THE INJECTION PERFORMANCE OF ALGAAS GAAS ABRUPT EMITTER HETEROJUNCTION BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 138-147
INGAAS ALAS INGAASP RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS GROWNBY CHEMICAL BEAM EPITAXY
Authors: CHEN WL MUNNS GO EAST JR HADDAD GI
Citation: Wl. Chen et al., INGAAS ALAS INGAASP RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS GROWNBY CHEMICAL BEAM EPITAXY, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 155-161
A DIRECT OPTICALLY INJECTION-LOCKED 2.6-GHZ HBT OSCILLATOR
Authors: KARAKUCUK M LI WQ FREEMAN PN EAST JR HADDAD GI BHATTACHARYA PK
Citation: M. Karakucuk et al., A DIRECT OPTICALLY INJECTION-LOCKED 2.6-GHZ HBT OSCILLATOR, Microwave and optical technology letters, 6(10), 1993, pp. 609-611
HIGH-SPEED AL0.2GA0.8AS GAAS MULTI-QUANTUM-WELL PHOTOTRANSISTORS WITHTUNABLE SPECTRAL RESPONSE/
Authors: LI WQ KARAKUCUK M FREEMAN PN EAST JR HADDAD GI BHATTACHARYA PK
Citation: Wq. Li et al., HIGH-SPEED AL0.2GA0.8AS GAAS MULTI-QUANTUM-WELL PHOTOTRANSISTORS WITHTUNABLE SPECTRAL RESPONSE/, IEEE electron device letters, 14(7), 1993, pp. 335-337
LARGE-SIGNAL HBT CHARACTERIZATION AND MODELING AT MILLIMETER-WAVE FREQUENCIES
Authors: TEETER DA EAST JR HADDAD GI
Citation: Da. Teeter et al., LARGE-SIGNAL HBT CHARACTERIZATION AND MODELING AT MILLIMETER-WAVE FREQUENCIES, IEEE transactions on microwave theory and techniques, 41(6-7), 1993, pp. 1087-1093
LARGE-SIGNAL NUMERICAL AND ANALYTICAL HBT MODELS
Authors: TEETER DA EAST JR MAINS RK HADDAD GI
Citation: Da. Teeter et al., LARGE-SIGNAL NUMERICAL AND ANALYTICAL HBT MODELS, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 837-845
EXPERIMENTAL REALIZATION OF THE BOUND-STATE RESONANT-TUNNELING TRANSISTOR
Authors: CHEN WL HADDAD GI MUNNS GO EAST JR
Citation: Wl. Chen et al., EXPERIMENTAL REALIZATION OF THE BOUND-STATE RESONANT-TUNNELING TRANSISTOR, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2133-2134
HIGH-FREQUENCY GAAS AL0.25GA0.75AS HETEROJUNCTION BIPOLAR-TRANSISTORSWITH TRANSPARENT INDIUM-TIN-OXIDE EMITTER CONTACTS/
Authors: LI WQ KARAKUCUK M KULMAN J EAST JR HADDAD GI BHATTACHARYA PK
Citation: Wq. Li et al., HIGH-FREQUENCY GAAS AL0.25GA0.75AS HETEROJUNCTION BIPOLAR-TRANSISTORSWITH TRANSPARENT INDIUM-TIN-OXIDE EMITTER CONTACTS/, Electronics Letters, 29(25), 1993, pp. 2223-2225
Risultati: 1-14 |