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Results:
1-16
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Results: 16
Authors:
ABAY B
GUDER HS
EFEOGLU H
YOGURTCU YK
Citation: B. Abay et al., URBACH-MARTIENSSEN TAILS IN ER-DOPED AND UNDOPED N-TYPE INSE, Physica. B, Condensed matter, 254(1-2), 1998, pp. 148-155
Authors:
TURUT A
GUMUS A
SAGLAM M
TUZEMEN S
EFEOGLU H
YALCIN N
MISSOUS M
Citation: A. Turut et al., THERMAL-STABILITY OF CR-NI-CO ALLOY SCHOTTKY CONTACTS ON MBE N-GAAS, Semiconductor science and technology, 13(7), 1998, pp. 776-780
Authors:
ABAY B
EFEOGLU H
YOGURTCU YK
Citation: B. Abay et al., LOW-TEMPERATURE PHOTOLUMINESCENCE OF N-INSE LAYER SEMICONDUCTOR CRYSTALS, Materials research bulletin, 33(9), 1998, pp. 1401-1410
Authors:
ABAY B
GUDER HS
EFEOGLU H
YOGURTCU YK
Citation: B. Abay et al., INFLUENCE OF TEMPERATURE AND PHASE-TRANSITIONS ON THE URBACHS TAILS OF ABSORPTION-SPECTRA FOR TLINS2 SINGLE-CRYSTALS, Journal of applied physics, 84(7), 1998, pp. 3872-3879
Authors:
GURBULAK B
YILDIRIM M
TUZEMEN S
EFEOGLU H
YOGURTCU YK
Citation: B. Gurbulak et al., TEMPERATURE-DEPENDENCE OF GALVANOMAGNETIC PROPERTIES FOR GD DOPED ANDUNDOPED P-TYPE GASE, Journal of applied physics, 83(4), 1998, pp. 2030-2034
Authors:
SAGLAM M
TURUT A
NUHOGLU C
EFEOGLU H
KILICOGLU T
EBEOGLU MA
Citation: M. Saglam et al., INFLUENCES OF THERMAL ANNEALING, THE ELECTROLYTE PH, AND CURRENT-DENSITY ON THE INTERFACE STATE DENSITY DISTRIBUTION OF ANODIC MOS STRUCTURES, Applied physics A: Materials science & processing, 65(1), 1997, pp. 33-37
Authors:
ABAY B
ONGANER Y
SAGLAM M
EFEOGLU H
TURUT A
YOGURTCU YK
Citation: B. Abay et al., CHARACTERISTICS OF METALLIC POLYMER AND AU SCHOTTKY CONTACTS ON CLEAVED SURFACES OF INSE(ER), Solid-state electronics, 41(6), 1997, pp. 924-926
Authors:
SAGLAM M
AYYILDIZ E
GUMUS A
TURUT A
EFEOGLU H
TUZEMEN S
Citation: M. Saglam et al., SERIES RESISTANCE CALCULATION FOR THE METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY-BARRIER DIODES, Applied physics A: Materials science & processing, 62(3), 1996, pp. 269-273
Authors:
ABAY B
GURBULAK B
YILDIRIM M
EFEOGLU H
TUZEMEN S
YOGURTCU YK
Citation: B. Abay et al., ELECTROTHERMAL INVESTIGATION OF THE SWITCHING EFFECT IN P-TYPE TLINSE2, TLINTE2, AND TLGATE2, CHAIN CHALCOGENIDE SEMICONDUCTORS, Journal of electronic materials, 25(7), 1996, pp. 1054-1059
Authors:
ONGANER Y
SAGLAM M
TURUT A
EFEOGLU H
TUZEMEN S
Citation: Y. Onganer et al., HIGH BARRIER METALLIC POLYMER P-TYPE SILICON SCHOTTKY DIODES, Solid-state electronics, 39(5), 1996, pp. 677-680
Authors:
AYYILDIZ E
TURUT A
EFEOGLU H
TUZEMEN S
SAGLAM M
YOGURTCU YK
Citation: E. Ayyildiz et al., EFFECT OF SERIES RESISTANCE ON THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY DIODES IN THE PRESENCE OF INTERFACIAL LAYER, Solid-state electronics, 39(1), 1996, pp. 83-87
Authors:
YILDIRIM M
EFEOGLU H
ABAY B
YOGURTCU YK
Citation: M. Yildirim et al., TEMPERATURE-DEPENDENCE OF MAGNETORESISTANCE IN NEUTRON-IRRADIATED ANDUNIRRADIATED HIGH-RESISTIVITY P-TYPE SILICON, Physica status solidi. a, Applied research, 153(2), 1996, pp. 473-480
Authors:
ABAY B
GURBULAK B
YILDIRIM M
EFEOGLU H
YOGURTCU YK
Citation: B. Abay et al., ELECTROTHERMAL INVESTIGATION OF THE SWITCHING PHENOMENA IN P-TYPE TLINSE2 SINGLE-CRYSTALS, Physica status solidi. a, Applied research, 153(1), 1996, pp. 145-151
Authors:
YILDIRIM M
GURBULAK B
ABAY B
EFEOGLU H
TUZEMEN S
YOGURTCU YK
Citation: M. Yildirim et al., TEMPERATURE-DEPENDENCE OF GALVANOMAGNETIC PROPERTIES FOR ER-DOPED ANDUNDOPED N-TYPE INSE, Journal of applied physics, 80(8), 1996, pp. 4437-4441
Authors:
TURUT A
SAGLAM M
EFEOGLU H
YALCIN N
YILDIRIM M
ABAY B
Citation: A. Turut et al., INTERPRETING THE NONIDEAL REVERSE BIAS C-V CHARACTERISTICS AND IMPORTANCE OF THE DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT ON APPLIED VOLTAGE, Physica. B, Condensed matter, 205(1), 1995, pp. 41-50
Authors:
POOLE I
EFEOGLU H
SINGER KE
PEAKER AR
Citation: I. Poole et al., THE IMPACT OF LATTICE DILATION ON DEEP STATES IN MBE GAAS, Journal of crystal growth, 127(1-4), 1993, pp. 703-706
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