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Results: 1-9 |
Results: 9
STRESS-FIELD POLARITY EFFECT ON DEFECTS GENERATION IN THIN SILICON DIOXIDE FILMS
Authors: ELHDIY A SALACE G JOURDAIN M MEINERTZHAGEN A VUILLAUME D
Citation: A. Elhdiy et al., STRESS-FIELD POLARITY EFFECT ON DEFECTS GENERATION IN THIN SILICON DIOXIDE FILMS, Thin solid films, 296(1-2), 1997, pp. 106-109
ON THE POSITIVE CHARGE AND INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: MEINERTZHAGEN A PETIT C YARD G JOURDAIN M ELHDIY A
Citation: A. Meinertzhagen et al., ON THE POSITIVE CHARGE AND INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 80(1), 1996, pp. 271-277
COMPARISON OF THE GENERATED OXIDE CHARGE BY INJECTION OF ELECTRONS FOR BOTH POLARITIES
Authors: MEINERTZHAGEN A YARD G PETIT C JOURDAIN M ELHDIY A SALACE G REIMBOLD G
Citation: A. Meinertzhagen et al., COMPARISON OF THE GENERATED OXIDE CHARGE BY INJECTION OF ELECTRONS FOR BOTH POLARITIES, Journal of non-crystalline solids, 187, 1995, pp. 181-185
THE NO-THERMAL ACTIVATION OF THE DEFECT GENERATION MECHANISM IN A MOSSTRUCTURE
Authors: ELHDIY A SALACE G MEINERTZHAGEN A JOURDAIN M PETIT C AASSIME A
Citation: A. Elhdiy et al., THE NO-THERMAL ACTIVATION OF THE DEFECT GENERATION MECHANISM IN A MOSSTRUCTURE, Journal of non-crystalline solids, 187, 1995, pp. 216-220
CHARGE GENERATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS DURING FOWLER-NORDHEIM STRESS
Authors: ELRHARBI S JOURDAIN M MEINERTZHAGEN A ELHDIY A PETIT C
Citation: S. Elrharbi et al., CHARGE GENERATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS DURING FOWLER-NORDHEIM STRESS, Journal de physique. III, 4(6), 1994, pp. 1045-1051
ON THE RELAXATION OF FIELD-INDUCED OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: MEINERTZHAGEN A HENRY V PETIT C ELHDIY A JOURDAIN M
Citation: A. Meinertzhagen et al., ON THE RELAXATION OF FIELD-INDUCED OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Solid-state electronics, 37(8), 1994, pp. 1553-1556
POSITIVE CHARGE AND INTERFACE STATE GENERATION IN A THIN GATE OXIDE (30 NM) METAL-OXIDE-SEMICONDUCTOR CAPACITOR
Authors: ELHDIY A
Citation: A. Elhdiy, POSITIVE CHARGE AND INTERFACE STATE GENERATION IN A THIN GATE OXIDE (30 NM) METAL-OXIDE-SEMICONDUCTOR CAPACITOR, Journal of applied physics, 75(3), 1994, pp. 1592-1598
STUDY OF DEFECTS INDUCED BY HIGH-ELECTRIC-FIELD STRESS INTO A THIN GATE OXIDE (11 NM) OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: ELHDIY A SALACE G PETIT C JOURDAIN M VUILLAUME D
Citation: A. Elhdiy et al., STUDY OF DEFECTS INDUCED BY HIGH-ELECTRIC-FIELD STRESS INTO A THIN GATE OXIDE (11 NM) OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 74(2), 1993, pp. 1124-1130
STUDY OF THE INTERFACE-STATE FORMATION AT DIFFERENT TEMPERATURES
Authors: ELHDIY A
Citation: A. Elhdiy, STUDY OF THE INTERFACE-STATE FORMATION AT DIFFERENT TEMPERATURES, Applied physics letters, 63(24), 1993, pp. 3338-3340
Risultati: 1-9 |