Authors: PERSHENKOV VS MASLOV VB CHEREPKO SV SHVETZOVSHILOVSKY IN BELYAKOV VV SOGOYAN AV RUSANOVSKY VI ULIMOV VN EMELIANOV VV NASIBULLIN VS

Citation: Vs. Pershenkov et al., THE EFFECT OF EMITTER JUNCTION BIAS ON THE LOW DOSE-RATE RADIATION RESPONSE OF BIPOLAR-DEVICES, IEEE transactions on nuclear science, 44(6), 1997, pp. 1840-1848

Authors: EMELIANOV VV SOGOYAN AV MESHUROV OV ULIMOV VN PERSHENKOV VS

Citation: Vv. Emelianov et al., MODELING THE FIELD AND THERMAL-DEPENDENCE OF RADIATION-INDUCED CHARGEANNEALING IN MOS DEVICES, IEEE transactions on nuclear science, 43(6), 1996, pp. 2572-2578

Authors: EMELIANOV VV ZEBREV GI ULIMOV VN USEINOV RG BELYAKOV VV PERSHENKOV VS

Citation: Vv. Emelianov et al., REVERSIBLE POSITIVE CHARGE ANNEALING IN MOS-TRANSISTOR DURING VARIETYOF ELECTRICAL AND THERMAL-STRESSES, IEEE transactions on nuclear science, 43(3), 1996, pp. 805-809

Authors: PERSHENKOV VS BELYAKOV VV CHEREPKO SV NIKIFOROV AY SOGOYAN AV ULIMOV VN EMELIANOV VV

Citation: Vs. Pershenkov et al., EFFECT OF ELECTRON TRAPS ON REVERSIBILITY OF ANNEALING, IEEE transactions on nuclear science, 42(6), 1995, pp. 1750-1757