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Results:
1-14
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Results: 14
Authors:
TAKEGAWA Y
ENTA Y
SUEMITSU M
MIYAMOTO N
KATO H
Citation: Y. Takegawa et al., GROWTH MODE AND CHARACTERISTICS OF THE O-2-OXIDIZED SI(100) SURFACE OXIDE LAYER OBSERVED BY REAL-TIME PHOTOEMISSION MEASUREMENT, JPN J A P 1, 37(1), 1998, pp. 261-265
Authors:
SAKAMOTO H
TAKAKUWA Y
HORI T
ENTA Y
KATO H
MIYAMOTO N
Citation: H. Sakamoto et al., DEVELOPMENT OF A 3-ELECTRODE-LENS DRIFT-TUBE FOR TIME-OF-FLIGHT MASS-SPECTROMETRY, Journal of synchrotron radiation, 5, 1998, pp. 612-614
Authors:
ENTA Y
MIYANISHI Y
IRIMACHI H
NIWANO M
SUEMITSU M
MIYAMOTO N
SHIGEMASA E
KATO H
Citation: Y. Enta et al., REAL-TIME CORE-LEVEL SPECTROSCOPY OF INITIAL THERMAL OXIDE ON SI(110), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1716-1720
Authors:
SUEMITSU M
TSUKIDATE Y
NAKAZAWA H
ENTA Y
Citation: M. Suemitsu et al., EFFECTS OF SURFACE PHOSPHORUS ON THE KINETICS OF HYDROGEN DESORPTION FROM SILANE-ADSORBED SI(100) SURFACE AT ROOM TEMPERATURES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1772-1774
Authors:
TAKAKUWA Y
YAMAGUCHI T
HORI T
HORIE T
ENTA Y
SAKAMOTO H
KATO H
MIYAMOTO N
Citation: Y. Takakuwa et al., IN-SITU OBSERVATION OF THERMAL AND PHOTON-INDUCED REACTIONS ON SI SURFACES BY ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY, Journal of electron spectroscopy and related phenomena, 88, 1998, pp. 747-755
Authors:
ENTA Y
MIYANISHI Y
IRIMACHI H
NIWANO M
SUEMITSU M
MIYAMOTO N
SHIGEMASA E
KATO H
Citation: Y. Enta et al., REAL-TIME MEASUREMENTS OF SI 2P CORE-LEVEL DURING DRY OXIDATION OF SI(100), Physical review. B, Condensed matter, 57(11), 1998, pp. 6294-6296
Authors:
ENTA Y
IRIMACHI H
SUEMITSU M
MIYAMOTO N
Citation: Y. Enta et al., COMPARISON BETWEEN ULTRAVIOLET-PHOTOELECTRON SPECTROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING SI EPITAXIAL-GROWTH ON SI(100), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 911-914
Authors:
SAKAMOTO H
TAKAKUWA Y
ENTA Y
HORIE T
HORI T
YAMAGUCHI T
MIYAMOTO N
KATO H
Citation: H. Sakamoto et al., IN-SITU MONITORING OF GAS-SOURCE MOLECULAR-BEAM EPITAXY OF SILICON WITH DISILANE BY ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY, Applied surface science, 117, 1997, pp. 77-81
Authors:
TAKAKUWA Y
ENTA Y
MIYAMOTO N
Citation: Y. Takakuwa et al., IN-SITU OBSERVATION OF THE SURFACE-REACTION DURING SYNCHROTRON RADIATION-ASSISTED GAS-SOURCE MOLECULAR-BEAM EPITAXY OF SILICON, Optoelectronics, 11(1), 1996, pp. 3-22
Authors:
ENTA Y
TAKEGAWA Y
SHOJI D
SUEMITSU M
TAKAKUWA Y
KATO H
MIYAMOTO N
Citation: Y. Enta et al., BAND-DISPERSION-ORIGINATED PHOTOELECTRON INTENSITY OSCILLATIONS DURING SI EPITAXIAL-GROWTH ON SI(100), Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 173-176
Authors:
ENTA Y
TAKEGAWA Y
SUEMITSU M
MIYAMOTO N
Citation: Y. Enta et al., GROWTH-KINETICS OF THERMAL-OXIDATION PROCESS ON SI(100) BY REAL-TIME ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY, Applied surface science, 101, 1996, pp. 449-453
Authors:
ENTA Y
MIYAMOTO N
TAKAKUWA Y
KATO H
Citation: Y. Enta et al., PHOTOELECTRON INTENSITY OSCILLATION AS A PROBE TO MONITOR SI LAYER-BY-LAYER GROWTH, Applied surface science, 82-3, 1994, pp. 327-331
Authors:
ENTA Y
HORIE T
MIYAMOTO N
TAKAKUWA Y
SAKAMOTO H
KATO H
Citation: Y. Enta et al., ORIGIN OF SURFACE-STATE PHOTOEMISSION INTENSITY OSCILLATION DURING SIEPITAXIAL-GROWTH ON A SI(100) SURFACE, Surface science, 313(1-2), 1994, pp. 120000797-120000800
Authors:
TAKAKUWA Y
ENTA Y
YAMAGUCHI T
HORI T
NIWANO M
MIYAMOTO N
ISHIDA H
SAKAMOTO H
NISHIMORI T
Citation: Y. Takakuwa et al., PHOTOELECTRON INTENSITY OSCILLATION DURING CHEMICAL-VAPOR-DEPOSITION ON SI(100) SURFACE WITH SI2H6, Applied physics letters, 64(15), 1994, pp. 2013-2015
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