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Results:
1-19
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Results: 19
Authors:
HADJADJ A
FAVRE M
EQUER B
CABARROCAS PRI
Citation: A. Hadjadj et al., IN-SITU KELVIN PROBE AND ELLIPSOMETRY STUDY OF THE DOPING OF A-SI-H AND A-SIC-H LAYERS - CORRELATION WITH SOLAR-CELL PARAMETERS, Solar energy materials and solar cells, 51(2), 1998, pp. 145-153
Authors:
ILIE A
EQUER B
Citation: A. Ilie et B. Equer, FIELD-ENHANCED GENERATION IN HYDROGENATED AMORPHOUS-SILICON, Physical review. B, Condensed matter, 57(24), 1998, pp. 15349-15359
Authors:
JUSKA G
ARLAUSKAS K
EQUER B
VANDERHAGHEN R
Citation: G. Juska et al., HIGH-ELECTRIC-FIELD HOLE MOBILITY IN A-SI-H, Journal of non-crystalline solids, 230, 1998, pp. 176-179
Authors:
HADJADJ A
CABARROCAS PRI
EQUER B
Citation: A. Hadjadj et al., QUANTITATIVE IN-SITU KELVIN PROBE STUDY OF BORON DOPING IN HYDROGENATED AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON CARBIDE, Philosophical magazine. B. Physics of condensed matter.Statistical mechanics, electronic, optical and magnetic, 76(6), 1997, pp. 941-950
Authors:
NABHAN W
EQUER B
BRONIATOWSKI A
DEROSNY G
Citation: W. Nabhan et al., A HIGH-RESOLUTION SCANNING KELVIN-PROBE MICROSCOPE FOR CONTACT POTENTIAL MEASUREMENTS ON THE 100-NM SCALE, Review of scientific instruments, 68(8), 1997, pp. 3108-3111
Authors:
EBOTHE J
CABARROCAS PRI
GODET C
EQUER B
Citation: J. Ebothe et al., DEPOSITION PARAMETERS AND SURFACE-TOPOGRAPHY OF A-SI-H THIN-FILMS OBTAINED BY THE RF GLOW-DISCHARGE PROCESS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 105-109
Authors:
ILIE A
EQUER B
POCHET T
Citation: A. Ilie et al., LEAKAGE CURRENT STUDIES OF THICK A-SI-H DETECTORS UNDER HIGH-ELECTRIC-FIELD CONDITIONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 18-22
Authors:
GU Q
SCHIFF EA
CHEVRIER JB
EQUER B
Citation: Q. Gu et al., FUNDAMENTAL TRANSPORT MECHANISMS AND HIGH-FIELD MOBILITY MEASUREMENTSIN AMORPHOUS-SILICON, Journal of non-crystalline solids, 200, 1996, pp. 194-197
Authors:
POCHET T
ILIE A
BRAMBILLA A
EQUER B
Citation: T. Pochet et al., SENSITIVITY MEASUREMENTS OF THICK AMORPHOUS-SILICON P-I-N NUCLEAR-DETECTORS, IEEE transactions on nuclear science, 43(3), 1996, pp. 1452-1457
Authors:
GU Q
SCHIFF EA
CHEVRIER JB
EQUER B
Citation: Q. Gu et al., HIGH-FIELD ELECTRON-DRIFT MEASUREMENTS AND THE MOBILITY EDGE IN HYDROGENATED AMORPHOUS-SILICON, Physical review. B, Condensed matter, 52(8), 1995, pp. 5695-5707
Authors:
VANDERHAGHEN R
EQUER B
FRANGIA JP
DEROSNY G
Citation: R. Vanderhaghen et al., THIN-FILM OPTICAL SENSOR WITH SPECTRAL SE LECTIVITY - ATMOSPHERIC TURBIDITY MEASUREMENT APPLICATION, Annales de chimie, 20(7-8), 1995, pp. 491-494
Authors:
HADJADJ A
CABARROCAS PR
EQUER B
Citation: A. Hadjadj et al., ANALYTICAL COMPENSATION OF STRAY CAPACITANCE EFFECT IN KELVIN PROBE MEASUREMENTS, Review of scientific instruments, 66(11), 1995, pp. 5272-5276
Authors:
EQUER B
ILIE A
Citation: B. Equer et A. Ilie, HIGH-ELECTRIC-FIELD FORMING OF A-SI-H P-I-N-DIODES, Journal of non-crystalline solids, 190(1-2), 1995, pp. 67-73
Authors:
NABHAN W
BRONIATOWSKI A
DEROSNY G
EQUER B
Citation: W. Nabhan et al., DESIGN AND IMPLEMENTATION OF A KELVIN MICROPROBE FOR CONTACT POTENTIAL MEASUREMENTS AT THE SUBMICRON SCALE, Microscopy microanalysis microstructures, 5(4-6), 1994, pp. 509-517
Authors:
NAJAR S
EQUER B
Citation: S. Najar et B. Equer, EBIC STUDY OF ELECTRON GENERATION FUNCTION IN A-SI-H, Microscopy research and technique, 28(6), 1994, pp. 527-534
Authors:
MALAMUD G
MINE P
VARTSKY D
EQUER B
BESSON P
BOURGEOIS P
BRESKJIN A
CHECHIK R
Citation: G. Malamud et al., MEASUREMENT OF THE QUANTUM EFFICIENCY OF CSI, AMORPHOUS-SILICON AND ORGANOMETALLIC REFLECTIVE PHOTOCATHODES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 348(2-3), 1994, pp. 275-279
Authors:
MALAMUD G
MINE P
VARTSKY D
EQUER B
BRESKIN A
CHECHIK R
Citation: G. Malamud et al., THE PHOTOYIELD OF CSI, AMORPHOUS-SILICON AND ORGANOMETALLIC REFLECTIVE PHOTOCATHODE MATERIALS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 343(1), 1994, pp. 121-128
Authors:
CHEVRIER JB
EQUER B
Citation: Jb. Chevrier et B. Equer, HIGH-ELECTRIC-FIELD AMORPHOUS-SILICON P-I-N-DIODES - EFFECT OF THE P-LAYER THICKNESS, Journal of applied physics, 76(11), 1994, pp. 7415-7422
Authors:
POCHET T
ILIE A
FOULON F
EQUER B
Citation: T. Pochet et al., CHARACTERIZATION OF A NEW A-SI H DETECTORS FABRICATED FROM AMORPHOUS-SILICON DEPOSITED AT HIGH-RATE BY HELIUM ENHANCED PECVD, IEEE transactions on nuclear science, 41(4), 1994, pp. 1014-1018
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1-19
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