ACNP - Italian Periodicals Catalogue

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Results: 1-13 |

Results: 13

NONRADIATIVE CURRENT IN INGAAS ALGAAS LASER-DIODES AS A MEASURE OF FACET STABILITY/

Authors: BEISTER G MAEGE J ERBERT G TRANKLE G

Citation: G. Beister et al., NONRADIATIVE CURRENT IN INGAAS ALGAAS LASER-DIODES AS A MEASURE OF FACET STABILITY/, Solid-state electronics, 42(11), 1998, pp. 1939-1945

MONOMODE EMISSION AT 350 MW AND HIGH-RELIABILITY WITH INGAAS ALGAAS (LAMBDA=1020 NM) RIDGE-WAVE-GUIDE LASER-DIODES/

Authors: BEISTER G BUGGE F ERBERT G MAEGE J RESSEL P SEBASTIAN J THIES A WENZEL H

Citation: G. Beister et al., MONOMODE EMISSION AT 350 MW AND HIGH-RELIABILITY WITH INGAAS ALGAAS (LAMBDA=1020 NM) RIDGE-WAVE-GUIDE LASER-DIODES/, Electronics Letters, 34(8), 1998, pp. 778-779

CRYSTALLINE PERFECTION IN GAINASP GAAS LASER STRUCTURES WITH GAINP ORALGAAS CLADDING LAYERS/

Authors: RECHENBERG I KNAUER A BUGGE F RICHTER U ERBERT G VOGEL K KLEIN A ZEIMER U WEYERS M

Citation: I. Rechenberg et al., CRYSTALLINE PERFECTION IN GAINASP GAAS LASER STRUCTURES WITH GAINP ORALGAAS CLADDING LAYERS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 368-372

STABLE OPERATION OF INGAAS INGAP/ALGAAS (LAMBDA=1020 NM) LASER-DIODES/

Authors: ERBERT G BEISTER G BUGGE F MAEGE J RESSEL P SEBASTIAN J VOGEL K WENZEL H WEYERS M

Citation: G. Erbert et al., STABLE OPERATION OF INGAAS INGAP/ALGAAS (LAMBDA=1020 NM) LASER-DIODES/, Electronics Letters, 33(9), 1997, pp. 778-779

GAIN SPECTRA MEASUREMENTS BY A VARIABLE STRIPE LENGTH METHOD WITH CURRENT INJECTION

Authors: OSTER A ERBERT G WENZEL H

Citation: A. Oster et al., GAIN SPECTRA MEASUREMENTS BY A VARIABLE STRIPE LENGTH METHOD WITH CURRENT INJECTION, Electronics Letters, 33(10), 1997, pp. 864-866

STABILITY OF SULFUR-PASSIVATED FACETS OF INGAAS-ALGAAS LASER-DIODES

Authors: BEISTER G MAEGE J SEBASTIAN J ERBERT G WEIXELBAUM L WEYERS M WURFL J DAGA OP

Citation: G. Beister et al., STABILITY OF SULFUR-PASSIVATED FACETS OF INGAAS-ALGAAS LASER-DIODES, IEEE photonics technology letters, 8(9), 1996, pp. 1124-1126

EFFECT OF GROWTH TEMPERATURE ON PERFORMANCE OF ALGAAS INGAAS/GAAS QW LASER-DIODES/

Authors: BUGGE F ERBERT G PROCOP M RECHENBERG I ZEIMER U WEYERS M

Citation: F. Bugge et al., EFFECT OF GROWTH TEMPERATURE ON PERFORMANCE OF ALGAAS INGAAS/GAAS QW LASER-DIODES/, Journal of electronic materials, 25(2), 1996, pp. 309-312

SIMPLE METHOD FOR EXAMINING SULFUR PASSIVATION OF FACETS IN INGAAS-ALGAAS (LAMBDA=0.98 MU-M) LASER-DIODES

Authors: BEISTER G MAEGE J GUTSCHE D ERBERT G SEBASTIAN J VOGEL K WEYERS M WURFL J DAGA OP

Citation: G. Beister et al., SIMPLE METHOD FOR EXAMINING SULFUR PASSIVATION OF FACETS IN INGAAS-ALGAAS (LAMBDA=0.98 MU-M) LASER-DIODES, Applied physics letters, 68(18), 1996, pp. 2467-2468

POWER HYSTERESIS AND WAVE-GUIDE BISTABILI TY OF STRIPE QUANTUM-WELL INGAAS GAAS/GAALAS HETEROLASERS WITH A STRAINED ACTIVE LAYER/

Authors: ELISEEV PG BEISTER G DRAKIN AE AKIMOVA IV ERBERT G MAEGE J SEBASTIAN J

Citation: Pg. Eliseev et al., POWER HYSTERESIS AND WAVE-GUIDE BISTABILI TY OF STRIPE QUANTUM-WELL INGAAS GAAS/GAALAS HETEROLASERS WITH A STRAINED ACTIVE LAYER/, Kvantovaa elektronika, 22(4), 1995, pp. 309-320

THRESHOLD DROP OF THE DIFFERENTIAL RESIST ANCE OF STRIPE QUANTUM-WELLINGAAS GAALAS LASERS/

Authors: ELISEEV PG MAEGE J ERBERT G BEISTER G

Citation: Pg. Eliseev et al., THRESHOLD DROP OF THE DIFFERENTIAL RESIST ANCE OF STRIPE QUANTUM-WELLINGAAS GAALAS LASERS/, Kvantovaa elektronika, 22(2), 1995, pp. 108-110

METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAINASP GAAS/

Authors: KNAUER A ERBERT G GRAMLICH S OSTER A RICHTER E ZEIMER U WEYERS M

Citation: A. Knauer et al., METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAINASP GAAS/, Journal of electronic materials, 24(11), 1995, pp. 1655-1658

POTENTIAL SOURCES OF DEGRADATION IN INGAAS GAAS LASER-DIODES/

Authors: RECHENBERG I BEISTER G BUGGE F ERBERT G GRAMLICH S KLEIN A MAEGE J PILATZEK M RICHTER U RUVIMOV SS TREPTOW H WEYERS M

Citation: I. Rechenberg et al., POTENTIAL SOURCES OF DEGRADATION IN INGAAS GAAS LASER-DIODES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 310-313

EFFECT OF GROWTH INTERRUPTION ON PERFORMANCE OF ALGAAS INGAAS/GAAS QUANTUM-WELL LASERS/

Authors: BUGGE F BEISTER G ERBERT G GRAMLICH S RECHENBERG I TREPTOW H WEYERS M

Citation: F. Bugge et al., EFFECT OF GROWTH INTERRUPTION ON PERFORMANCE OF ALGAAS INGAAS/GAAS QUANTUM-WELL LASERS/, Journal of crystal growth, 145(1-4), 1994, pp. 907-910

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