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Results: 1-7 |
Results: 7
2ND-HARMONIC GENERATION AT THE INTERFACE BETWEEN SI(100) AND THIN SIO2 LAYERS
Authors: CUNDIFF ST KNOX WH BAUMANN FH EVANSLUTTERODT KW GREEN ML
Citation: St. Cundiff et al., 2ND-HARMONIC GENERATION AT THE INTERFACE BETWEEN SI(100) AND THIN SIO2 LAYERS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1730-1734
SI SIO2 INTERFACE ROUGHNESS - COMPARISON BETWEEN SURFACE 2ND-HARMONICGENERATION AND X-RAY-SCATTERING/
Authors: CUNDIFF ST KNOX WH BAUMANN FH EVANSLUTTERODT KW TANG MT GREEN ML VANDRIEL HM
Citation: St. Cundiff et al., SI SIO2 INTERFACE ROUGHNESS - COMPARISON BETWEEN SURFACE 2ND-HARMONICGENERATION AND X-RAY-SCATTERING/, Applied physics letters, 70(11), 1997, pp. 1414-1416
KINETIC SMOOTHENING - GROWTH THICKNESS DEPENDENCE OF THE INTERFACE WIDTH OF THE SI(001) SIO2 INTERFACE/
Authors: DAWSON JL KRISCH K EVANSLUTTERODT KW TANG MT MANCHANDA L GREEN ML BRASEN D HIGASHI GS BOONE T
Citation: Jl. Dawson et al., KINETIC SMOOTHENING - GROWTH THICKNESS DEPENDENCE OF THE INTERFACE WIDTH OF THE SI(001) SIO2 INTERFACE/, Journal of applied physics, 77(9), 1995, pp. 4746-4749
ANGLE CALCULATIONS FOR A 2-RAY DIFFRACTOMETER(2 SURFACE X)
Authors: EVANSLUTTERODT KW TANG MT
Citation: Kw. Evanslutterodt et Mt. Tang, ANGLE CALCULATIONS FOR A 2-RAY DIFFRACTOMETER(2 SURFACE X), Journal of applied crystallography, 28, 1995, pp. 318-326
RAPID THERMAL-OXIDATION OF SILICON IN N2O BETWEEN 800-DEGREES AND 1200-DEGREES-C - INCORPORATED NITROGEN AND INTERFACIAL ROUGHNESS
Authors: GREEN ML BRASEN D EVANSLUTTERODT KW FELDMAN LC KRISCH K LENNARD W TANG HT MANCHANDA L TANG MT
Citation: Ml. Green et al., RAPID THERMAL-OXIDATION OF SILICON IN N2O BETWEEN 800-DEGREES AND 1200-DEGREES-C - INCORPORATED NITROGEN AND INTERFACIAL ROUGHNESS, Applied physics letters, 65(7), 1994, pp. 848-850
GROWTH TEMPERATURE-DEPENDENCE OF THE SI(001) SIO2 INTERFACE WIDTH/
Authors: TANG MT EVANSLUTTERODT KW GREEN ML BRASEN D KRISCH K MANCHANDA L HIGASHI GS BOONE T
Citation: Mt. Tang et al., GROWTH TEMPERATURE-DEPENDENCE OF THE SI(001) SIO2 INTERFACE WIDTH/, Applied physics letters, 64(6), 1994, pp. 748-750
ROUGHNESS OF THE SILICON (001) SIO2 INTERFACE
Authors: TANG MT EVANSLUTTERODT KW HIGASHI GS BOONE T
Citation: Mt. Tang et al., ROUGHNESS OF THE SILICON (001) SIO2 INTERFACE, Applied physics letters, 62(24), 1993, pp. 3144-3146
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