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Results: 1-11 |
Results: 11
The National Birth Defects Prevention Study
Authors: Yoon, PW Rasmussen, SA Lynberg, MC Moore, CA Anderka, M Carmichael, SL Costa, P Druschel, C Hobbs, CA Romitti, PA Langlois, PH Edmonds, LD
Citation: Pw. Yoon et al., The National Birth Defects Prevention Study, PUBL HEA RE, 116, 2001, pp. 32-40
A time-dependent charge-collection efficiency for diffusion
Authors: Edmonds, LD
Citation: Ld. Edmonds, A time-dependent charge-collection efficiency for diffusion, IEEE NUCL S, 48(5), 2001, pp. 1609-1622
Angular dependence of DRAM upset susceptibility and implications for testing and analysis
Authors: Guertin, SM Edmonds, LD Swift, GM
Citation: Sm. Guertin et al., Angular dependence of DRAM upset susceptibility and implications for testing and analysis, IEEE NUCL S, 47(6), 2000, pp. 2380-2385
A model for single-event transients in comparators
Authors: Johnston, AH Swift, GM Miyahira, TF Edmonds, LD
Citation: Ah. Johnston et al., A model for single-event transients in comparators, IEEE NUCL S, 47(6), 2000, pp. 2624-2633
Proton SEU cross sections derived from heavy-ion test data
Authors: Edmonds, LD
Citation: Ld. Edmonds, Proton SEU cross sections derived from heavy-ion test data, IEEE NUCL S, 47(5), 2000, pp. 1713-1728
Angular and energy dependence of proton upset in optocouplers
Authors: Johnston, AH Miyahira, T Swift, GP Guertin, SM Edmonds, LD
Citation: Ah. Johnston et al., Angular and energy dependence of proton upset in optocouplers, IEEE NUCL S, 46(6), 1999, pp. 1335-1341
On the role of energy deposition in triggering SEGR in power MOSFETs
Authors: Selva, LE Swift, GM Taylor, WA Edmonds, LD
Citation: Le. Selva et al., On the role of energy deposition in triggering SEGR in power MOSFETs, IEEE NUCL S, 46(6), 1999, pp. 1403-1409
Electric currents through ion tracks in silicon devices
Authors: Edmonds, LD
Citation: Ld. Edmonds, Electric currents through ion tracks in silicon devices, IEEE NUCL S, 45(6), 1998, pp. 3153-3164
Breakdown of gate oxides during irradiation with heavy ions
Authors: Johnston, AH Swift, GM Miyahira, T Edmonds, LD
Citation: Ah. Johnston et al., Breakdown of gate oxides during irradiation with heavy ions, IEEE NUCL S, 45(6), 1998, pp. 2500-2508
Radiation response of a MEMS accelerometer: An electrostatic force
Authors: Edmonds, LD Swift, GM Lee, CI
Citation: Ld. Edmonds et al., Radiation response of a MEMS accelerometer: An electrostatic force, IEEE NUCL S, 45(6), 1998, pp. 2779-2788
Single-event upset effects in optocouplers
Authors: Johnston, AH Swift, GM Miyahira, T Guertin, S Edmonds, LD
Citation: Ah. Johnston et al., Single-event upset effects in optocouplers, IEEE NUCL S, 45(6), 1998, pp. 2867-2875
Risultati: 1-11 |