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Results: 1-14 |
Results: 14
A highly stable SiC based microhotplate NO2 gas-sensor
Authors: Solzbacher, F Imawan, C Steffes, H Obermeier, E Eickhoff, M
Citation: F. Solzbacher et al., A highly stable SiC based microhotplate NO2 gas-sensor, SENS ACTU-B, 78(1-3), 2001, pp. 216-220
A new SiC/HfB2 based low power gas sensor
Authors: Solzbacher, F Imawan, C Steffes, H Obermeier, E Eickhoff, M
Citation: F. Solzbacher et al., A new SiC/HfB2 based low power gas sensor, SENS ACTU-B, 77(1-2), 2001, pp. 111-115
Etching characteristics and mechanical properties of a-SiC : H thin films
Authors: Schmid, U Eickhoff, M Richter, C Krotz, G Schmitt-Landsiedel, D
Citation: U. Schmid et al., Etching characteristics and mechanical properties of a-SiC : H thin films, SENS ACTU-A, 94(1-2), 2001, pp. 87-94
Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterostructures
Authors: Eickhoff, M Ambacher, O Krotz, G Stutzmann, M
Citation: M. Eickhoff et al., Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterostructures, J APPL PHYS, 90(7), 2001, pp. 3383-3386
Oxidation dependence on defect density in 3C-SiC films
Authors: Eickhoff, M Vouroutzis, N Nielsen, A Krotz, G Stoemenos, J
Citation: M. Eickhoff et al., Oxidation dependence on defect density in 3C-SiC films, J ELCHEM SO, 148(6), 2001, pp. G336-G343
Suppression of Si cavities at the SiC/Si interface during epitaxial growthof 3C-SiC on silicon-on-insulator
Authors: Moller, H Krotz, G Eickhoff, M Nielsen, A Papaioannou, V Stoemenos, J
Citation: H. Moller et al., Suppression of Si cavities at the SiC/Si interface during epitaxial growthof 3C-SiC on silicon-on-insulator, J ELCHEM SO, 148(1), 2001, pp. G16-G24
High quality beta-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step
Authors: Moller, H Eickhoff, M Rapp, M Grueninger, HW Krotz, G
Citation: H. Moller et al., High quality beta-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step, APPL PHYS A, 68(4), 1999, pp. 461-465
A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates
Authors: Eickhoff, M Moller, H Kroetz, G Berg, JV Ziermann, R
Citation: M. Eickhoff et al., A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates, SENS ACTU-A, 74(1-3), 1999, pp. 56-59
Heteroepitaxial growth of 3C-SiC on SOI for sensor applications
Authors: Krotz, G Moller, H Eickhoff, M Zappe, S Ziermann, R Obermeier, E Stoemenos, J
Citation: G. Krotz et al., Heteroepitaxial growth of 3C-SiC on SOI for sensor applications, MAT SCI E B, 61-2, 1999, pp. 516-521
The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD
Authors: Papaioannou, V Moller, H Rapp, M Veoglmeier, L Eickhoff, M Krotz, G Stoemenos, J
Citation: V. Papaioannou et al., The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD, MAT SCI E B, 61-2, 1999, pp. 539-543
Influence of the silicon overlayer thickness of SOI unibond substrates on beta-SIC heteroepitaxy
Authors: Moller, H Eickhoff, M Vogelmeier, L Rapp, M Krotz, G Papaioannou, V Stoemenos, J
Citation: H. Moller et al., Influence of the silicon overlayer thickness of SOI unibond substrates on beta-SIC heteroepitaxy, MAT SCI E B, 61-2, 1999, pp. 567-570
High temperature piezoresistive beta-SiC-on-SOI pressure sensor with on chip SiC thermistor
Authors: Ziermann, R von Berg, J Obermeier, E Wischmeyer, F Niemann, E Moller, H Eickhoff, M Krotz, G
Citation: R. Ziermann et al., High temperature piezoresistive beta-SiC-on-SOI pressure sensor with on chip SiC thermistor, MAT SCI E B, 61-2, 1999, pp. 576-578
Selective growth of high-quality 3C-SiC using a SiO2 sacrificial-layer technique
Authors: Eickhoff, M Moller, H Rapp, M Kroetz, G
Citation: M. Eickhoff et al., Selective growth of high-quality 3C-SiC using a SiO2 sacrificial-layer technique, THIN SOL FI, 345(2), 1999, pp. 197-199
SOL thickness dependence of residual strain in SOI material
Authors: Camassel, J Planes, N Falkovsky, L Moller, H Eickhoff, M Krotz, G
Citation: J. Camassel et al., SOL thickness dependence of residual strain in SOI material, ELECTR LETT, 35(15), 1999, pp. 1284-1286
Risultati: 1-14 |