Authors:
Ribeiro, E
Cerdeira, F
Brasil, MJSP
Heinzel, T
Ensslin, K
Medeiros-Ribeiro, G
Petroff, PM
Citation: E. Ribeiro et al., An optical study of self-assembled InxGa1-xAs/GaAs quantum dots embedded in a two-dimensional electron gas, J APPL PHYS, 87(11), 2000, pp. 7994-7998
Authors:
Studenikin, SA
Chaplik, AV
Panaev, IA
Salis, G
Ensslin, K
Maranowski, K
Gossard, AC
Citation: Sa. Studenikin et al., Classical magnetotransport in a parabolic quantum well with a strong intersubband scattering, SEMIC SCI T, 14(7), 1999, pp. 604-610
Authors:
Ribeiro, E
Jaggi, R
Heinzel, T
Ensslin, K
Medeiros-Ribeiro, TG
Petroff, PM
Citation: E. Ribeiro et al., Transport properties of two-dimensional electron gases in Ga[Al]As heterostructures containing InAs self-assembled quantum dots, MICROEL ENG, 47(1-4), 1999, pp. 73-75
Authors:
Acremann, Y
Heinzel, T
Ensslin, K
Gini, E
Melchior, H
Holland, M
Citation: Y. Acremann et al., Individual scatterers as microscopic origin of equilibration between spin-polarized edge channels in the quantum Hall regime, PHYS REV B, 59(3), 1999, pp. 2116-2119
Citation: L. Bremme et al., Magnetization of a two-dimensional electron gas and the role of one-dimensional edge currents, PHYS REV B, 59(11), 1999, pp. 7305-7307
Authors:
Ribeiro, E
Jaggi, R
Heinzel, T
Ensslin, K
Medeiros-Ribeiro, G
Petroff, PM
Citation: E. Ribeiro et al., Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots, BRAZ J PHYS, 29(4), 1999, pp. 742-745
Authors:
Rychen, J
Ihn, T
Studerus, P
Herrmann, A
Ensslin, K
Citation: J. Rychen et al., A low-temperature dynamic mode scanning force microscope operating in highmagnetic fields, REV SCI INS, 70(6), 1999, pp. 2765-2768
Authors:
Ribeiro, E
Jaggi, RD
Heinzel, T
Ensslin, K
Medeiros-Ribeiro, G
Petroff, PM
Citation: E. Ribeiro et al., Metal-insulator transition in a disordered two-dimensional electron gas inGaAs-AlGaAs at zero magnetic field, PHYS REV L, 82(5), 1999, pp. 996-999
Authors:
Luscher, S
Fuhrer, A
Held, R
Heinzel, T
Ensslin, K
Wegscheider, W
Citation: S. Luscher et al., In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography, APPL PHYS L, 75(16), 1999, pp. 2452-2454
Authors:
Brosig, S
Ensslin, K
Brar, B
Thomas, M
Kroemer, H
Citation: S. Brosig et al., Landau and spin levels in InAs quantum wells resolved with inplane and parallel magnetic fields, PHYSICA B, 258, 1998, pp. 239-242
Authors:
Heinzel, T
Salis, G
Wirth, P
Ensslin, K
Maranowski, K
Gossard, AC
Citation: T. Heinzel et al., Investigation of the spatial variation of scattering centers in parabolic quantum wells, PHYSICA B, 258, 1998, pp. 252-255
Authors:
Ihn, T
Huberty, M
Salis, G
Ensslin, K
Maranowski, K
Gossard, AC
Citation: T. Ihn et al., Universal conductance fluctuations in a parabolic quantum well tunable from two- to three-dimensional behavior, PHYSICA B, 258, 1998, pp. 401-404
Authors:
Hartmann, R
Gennser, U
Sigg, H
Grutzmacher, D
Ensslin, K
Citation: R. Hartmann et al., Band gap and band alignment of strain reduced Si/Si1-x-yGexCy multiple quantum well structures obtained by photoluminescence measurements, APPL PHYS L, 73(9), 1998, pp. 1257-1259