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Results:
1-8
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Results: 8
Authors:
Seaford, ML
Tomich, DH
Eyink, KG
Grazulis, L
Mahalingham, K
Yang, Z
Wang, WI
Citation: Ml. Seaford et al., Comparison of GaAs grown on standard Si (511) and compliant SOI (511), J ELEC MAT, 29(7), 2000, pp. 906-908
Authors:
Tomich, DH
Eyink, KG
Grazulis, L
Brown, GL
Szmulowicz, F
Mahalingam, K
Seaford, ML
Kuo, CH
Hwang, WY
Lin, CH
Citation: Dh. Tomich et al., Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates, J ELEC MAT, 29(7), 2000, pp. 940-943
Authors:
Grazulis, L
Kelly, DL
Walker, DE
Tomich, DH
Eyink, KG
Lampert, WV
Citation: L. Grazulis et al., Comparison of nanomachined III-V semiconductor substrates, J VAC SCI B, 17(4), 1999, pp. 1852-1855
Authors:
Taferner, WT
Mahalingam, K
Dorsey, DL
Eyink, KG
Citation: Wt. Taferner et al., In situ monitoring of AlGaAs compositions and GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy, J VAC SCI B, 17(3), 1999, pp. 1218-1222
Authors:
Seaford, ML
Solomon, JS
Tomich, DH
Eyink, KG
Citation: Ml. Seaford et al., The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices, J ELEC MAT, 28(8), 1999, pp. 955-958
Authors:
Seaford, ML
Hesse, PJ
Tomich, DH
Eyink, KG
Citation: Ml. Seaford et al., Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates, J ELEC MAT, 28(7), 1999, pp. 878-880
Authors:
Taferner, WT
Mahalingam, K
Dorsey, DL
Eyink, KG
Citation: Wt. Taferner et al., In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy, J CRYST GR, 202, 1999, pp. 128-131
Authors:
Meng, Z
Yang, Q
Yip, PC
Eyink, KG
Taferner, WT
Igelnik, B
Citation: Z. Meng et al., Combined use of computational intelligence and materials data for on-line monitoring and control of MBE experiments, ENG APP ART, 11(5), 1998, pp. 587-595
Risultati:
1-8
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