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Results: 1-25 | 26-50 | 51-58 |
Results: 51-58/58
PREPARATION AND ANALYSIS OF THE NEGATIVE-RESISTANCE CHARACTERISTIC INAN AMORPHOUS-SILICON AND SILICON-CARBIDE SINGLE-BARRIER DEVICE
Authors: CHEN KH FANG YK SHIEH KH LIOU WR
Citation: Kh. Chen et al., PREPARATION AND ANALYSIS OF THE NEGATIVE-RESISTANCE CHARACTERISTIC INAN AMORPHOUS-SILICON AND SILICON-CARBIDE SINGLE-BARRIER DEVICE, Applied physics letters, 65(22), 1994, pp. 2815-2817
HIGH-CURRENT DENSITY IN AMORPHOUS-SILICON SILICONCARBIDE DOUBLE-BARRIER RESONANT-TUNNELING DEVICE ON ALUMINUM-SILICON SUBSTRATE
Authors: CHEN KH FANG YK LIU CR HWANG JD WU KS
Citation: Kh. Chen et al., HIGH-CURRENT DENSITY IN AMORPHOUS-SILICON SILICONCARBIDE DOUBLE-BARRIER RESONANT-TUNNELING DEVICE ON ALUMINUM-SILICON SUBSTRATE, JPN J A P 2, 32(6A), 1993, pp. 761-763
A NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH DOUBLE SWITCHING CHARACTERISTICS FOR MULTIPLE-VALUED LOGIC APPLICATIONS
Authors: LIU CR FANG YK HWANG JD CHEN KH
Citation: Cr. Liu et al., A NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH DOUBLE SWITCHING CHARACTERISTICS FOR MULTIPLE-VALUED LOGIC APPLICATIONS, IEEE electron device letters, 14(8), 1993, pp. 391-393
CHARACTERISTICS OF MOS CAPACITORS OF BF2 OR B-IMPLANTED POLYSILICON GATE WITH AND WITHOUT POCL3 CO-DOPED
Authors: HSIEH JC FANG YK CHEN CW TSAI NS LIN MS TSENG FC
Citation: Jc. Hsieh et al., CHARACTERISTICS OF MOS CAPACITORS OF BF2 OR B-IMPLANTED POLYSILICON GATE WITH AND WITHOUT POCL3 CO-DOPED, IEEE electron device letters, 14(5), 1993, pp. 222-224
STUDY AND IMPROVEMENT OF ANOMALOUS INTERFACE STATES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES INDUCED BY RAPID THERMAL POST-OXIDE ANNEALING
Authors: HSIEH JC FANG YK CHEN CW TSAI NS LIN MS TSENG FC
Citation: Jc. Hsieh et al., STUDY AND IMPROVEMENT OF ANOMALOUS INTERFACE STATES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES INDUCED BY RAPID THERMAL POST-OXIDE ANNEALING, Journal of applied physics, 73(10), 1993, pp. 5038-5042
A SILICON DOUBLE SWITCHING INVERSION-CONTROLLED SWITCH FOR MULTIPLE-VALUED LOGIC APPLICATIONS
Authors: FANG YK LIU CR CHEN KH HWANG JD
Citation: Yk. Fang et al., A SILICON DOUBLE SWITCHING INVERSION-CONTROLLED SWITCH FOR MULTIPLE-VALUED LOGIC APPLICATIONS, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 918-922
EFFECT OF RAPID THERMAL ANNEALING ON GATE INDUCED DRAIN LEAKAGE IN A N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
Authors: HSIEH JC FANG YK CHEN CW TSAI NS LIN MS TSENG FC
Citation: Jc. Hsieh et al., EFFECT OF RAPID THERMAL ANNEALING ON GATE INDUCED DRAIN LEAKAGE IN A N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, Applied physics letters, 63(22), 1993, pp. 3058-3059
NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH BIDIRECTIONALS-SHAPED NEGATIVE DIFFERENTIAL CHARACTERISTICS
Authors: LIU CR FANG YK CHEN KH HWANG JD KUO LC
Citation: Cr. Liu et al., NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH BIDIRECTIONALS-SHAPED NEGATIVE DIFFERENTIAL CHARACTERISTICS, Applied physics letters, 63(2), 1993, pp. 177-179
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