Citation: Zq. Fang et Dc. Look, ELECTRICAL-FIELD ENHANCED THERMAL QUENCHING OF A PROMINENT THERMALLY STIMULATED CURRENT PEAK IN SEMIINSULATING GAAS, Applied physics letters, 66(22), 1995, pp. 3033-3035
Authors:
LOOK DC
FANG ZQ
YAMAMOTO H
SIZELOVE JR
MIER MG
STUTZ CE
Citation: Dc. Look et al., DEEP TRAPS IN MOLECULAR-BEAM-EPITAXIAL GAAS GROWN AT LOW-TEMPERATURES, Journal of applied physics, 76(2), 1994, pp. 1029-1032
Citation: Dc. Look et al., HOPPING CONDUCTION IN MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT VERY-LOWTEMPERATURES, Journal of the Electrochemical Society, 141(3), 1994, pp. 747-750
Citation: Zq. Fang et Dc. Look, HOPPING CONDUCTION AND ITS PHOTOQUENCHING IN MOLECULAR-BEAM EPITAXIALGAAS GROWN AT LOW-TEMPERATURES, Journal of electronic materials, 22(12), 1993, pp. 1429-1432
Citation: Zq. Fang et Dc. Look, EXCESS DARK CURRENT DUE TO SAW DAMAGE IN SEMIINSULATING GAAS, Journal of electronic materials, 22(11), 1993, pp. 1361-1363
Citation: Zq. Fang et Dc. Look, PHOTOQUENCHING AND THERMAL RECOVERY OF A THERMALLY STIMULATED CURRENTPEAK IN SEMIINSULATING GAAS, Journal of applied physics, 73(10), 1993, pp. 4971-4974