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Results:
1-9
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Results: 9
Authors:
EDIRISINGHE SP
STATONBEVAN A
FAWCETT PN
JOYCE BA
Citation: Sp. Edirisinghe et al., TRANSMISSION ELECTRON-MICROSCOPY STUDY OF IN0.25GA0.75AS EPILAYERS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY - THE EFFECT OF EPILAYER THICKNESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 967-973
Authors:
JOYCE BA
SHITARA T
FAHY MR
SATO K
NEAVE JH
FAWCETT PN
KAMIYA I
ZHANG XM
Citation: Ba. Joyce et al., MECHANISMS OF LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF SEMICONDUCTOR-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 30(2-3), 1995, pp. 87-97
Authors:
JOYCE BA
ZHANG XM
NEAVE JH
FAWCETT PN
FAHY MR
SATO K
KAMIYA I
Citation: Ba. Joyce et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) INTENSITY OSCILLATIONS - GROWTH MODES AND GROWTH-RATES - A CRITIQUE, Scanning microscopy, 8(4), 1994, pp. 913-924
Authors:
FAWCETT PN
NEAVE JH
ZHANG J
JOYCE BA
Citation: Pn. Fawcett et al., STUDY OF THE EPITAXIAL-GROWTH OF GAAS(110) FILMS BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1201-1203
Authors:
PARKER TR
FAWCETT AH
PHILLIPS CC
MAJUMDAR S
FAWCETT PN
Citation: Tr. Parker et al., GATABLE ULTRAFAST FIELD-ASSISTED PHOTOEMISSION TO LAMBDA=1.55 MU-M FROM IN0.5GA0.5AS HETEROSTRUCTURES, Applied physics letters, 65(21), 1994, pp. 2711-2713
Authors:
JOYCE BA
OHTANI N
MOKLER SM
SHITARA T
ZHANG J
NEAVE JH
FAWCETT PN
Citation: Ba. Joyce et al., APPLICATIONS OF RHEED TO THE STUDY OF GROWTH DYNAMICS AND SURFACE-CHEMISTRY DURING MBE, Surface science, 298(2-3), 1993, pp. 399-407
Authors:
FAWCETT PN
NEAVE JH
ZHANG J
JOYCE BA
Citation: Pn. Fawcett et al., THE OBSERVATION OF MONOLAYER AND BILAYER GROWTH DURING THE DEPOSITIONOF GAAS(110) FILMS BY MOLECULAR-BEAM EPITAXY, Surface science, 296(1), 1993, pp. 67-74
Authors:
ZHANG X
PASHLEY DW
NEAVE JH
FAWCETT PN
ZHANG J
JOYCE BA
Citation: X. Zhang et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF GROWTH OF INAS ON GAAS(110) BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 132(1-2), 1993, pp. 331-334
Authors:
ZHANG X
PASHLEY DW
HART L
NEAVE JH
FAWCETT PN
JOYCE BA
Citation: X. Zhang et al., THE MORPHOLOGY AND ASYMMETRIC STRAIN RELIEF BEHAVIOR OF INAS FILMS ONGAAS (110) GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 131(3-4), 1993, pp. 300-308
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1-9
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