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Results: 1-17 |
Results: 17
OPTICAL CHARACTERISTICS OF MICROBOLOMETRIC ELEMENTS FOR UNCOOLED IR ARRAYS
Authors: LEONOV VN MALYAROV VG KHREBTOV IA SHAGANOV II FEOKTISTOV NA
Citation: Vn. Leonov et al., OPTICAL CHARACTERISTICS OF MICROBOLOMETRIC ELEMENTS FOR UNCOOLED IR ARRAYS, Journal of optical technology, 65(1), 1998, pp. 13-16
FILMS OF A-SI-H DOPED WITH ERBIUM FROM THE METALORGANIC COMPOUND ER(HFA)(3)ASTERISK-DME, EMITTING AT 1.54 MU-M
Authors: VORONKOV VB GOLUBEV VG GORSHKOV NI MEDVEDEV AV PEVTSOV AB SUGLOBOV DN FEOKTISTOV NA
Citation: Vb. Voronkov et al., FILMS OF A-SI-H DOPED WITH ERBIUM FROM THE METALORGANIC COMPOUND ER(HFA)(3)ASTERISK-DME, EMITTING AT 1.54 MU-M, Technical physics letters, 24(7), 1998, pp. 502-503
FABRICATION OF REGULAR 3-DIMENSIONAL LATTICES OF SUBMICRON SILICON CLUSTERS IN AN SIO2 OPAL MATRIX
Authors: BOGOMOLOV VN GOLUBEV VG KARTENKO NF KURDYUKOV DA PEVTSOV AB PROKOFEV AV RATNIKOV VV FEOKTISTOV NA SHARENKOVA NV
Citation: Vn. Bogomolov et al., FABRICATION OF REGULAR 3-DIMENSIONAL LATTICES OF SUBMICRON SILICON CLUSTERS IN AN SIO2 OPAL MATRIX, Technical physics letters, 24(4), 1998, pp. 326-327
MODIFIED METHOD OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF NANOCRYSTALLINE SILICON
Authors: GOLUBEV VG MEDVEDEV AV PEVTSOV AB FEOKTISTOV NA
Citation: Vg. Golubev et al., MODIFIED METHOD OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF NANOCRYSTALLINE SILICON, Technical physics letters, 24(10), 1998, pp. 758-759
PHOTOLUMINESCENCE OF A-SI-H FILMS GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION AND DOPED WITH ERBIUM FROM THE METALLORGANIC COMPOUND ER(HFA)(3)CENTER-DOT-DME
Authors: VORONKOV VB GOLUBEV VG MEDVEDEV AV PEVTSOV AB FEOKTISTOV NA GORSHKOV NI SUGLOBOV DN
Citation: Vb. Voronkov et al., PHOTOLUMINESCENCE OF A-SI-H FILMS GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION AND DOPED WITH ERBIUM FROM THE METALLORGANIC COMPOUND ER(HFA)(3)CENTER-DOT-DME, Physics of the solid state, 40(8), 1998, pp. 1301-1304
EXCITONS IN ZNP2 CRYSTALS IN THE ELECTRIC-FIELD OF A SCHOTTKY-BARRIER
Authors: ROMANOVSKII SO SELKIN AV STAMOV IG FEOKTISTOV NA
Citation: So. Romanovskii et al., EXCITONS IN ZNP2 CRYSTALS IN THE ELECTRIC-FIELD OF A SCHOTTKY-BARRIER, Physics of the solid state, 40(5), 1998, pp. 814-815
BOLOMETRIC PROPERTIES OF SILICON THIN-FILM STRUCTURES FABRICATED BY PLASMACHEMICAL VAPOR-PHASE DEPOSITION
Authors: ZEROV VY KULIKOV YV MALYAROV VG FEOKTISTOV NA KHREBTOV IA
Citation: Vy. Zerov et al., BOLOMETRIC PROPERTIES OF SILICON THIN-FILM STRUCTURES FABRICATED BY PLASMACHEMICAL VAPOR-PHASE DEPOSITION, Technical physics letters, 23(6), 1997, pp. 481-483
RAMAN-SCATTERING SPECTRA AND ELECTRICAL-CONDUCTIVITY OF THIN SILICON FILMS WITH A MIXED AMORPHOUS-NANOCRYSTALLINE PHASE-COMPOSITION - DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION
Authors: GOLUBEV VG DAVYDOV VY MEDVEDEV AV PEVTSOV AB FEOKTISTOV NA
Citation: Vg. Golubev et al., RAMAN-SCATTERING SPECTRA AND ELECTRICAL-CONDUCTIVITY OF THIN SILICON FILMS WITH A MIXED AMORPHOUS-NANOCRYSTALLINE PHASE-COMPOSITION - DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION, Physics of the solid state, 39(8), 1997, pp. 1197-1201
STUDY OF THE SURFACE RECOMBINATION IN P-I-N STRUCTURES BASED ON AMORPHOUS HYDROGENATED SILICON
Authors: FEOKTISTOV NA PEVTSOV AB KOSAREV AI
Citation: Na. Feoktistov et al., STUDY OF THE SURFACE RECOMBINATION IN P-I-N STRUCTURES BASED ON AMORPHOUS HYDROGENATED SILICON, Semiconductors, 30(7), 1996, pp. 702-705
OPTICALLY ADDRESSED SPATIAL LIGHT-MODULATOR WITH HIGHLY SENSITIVE LAYER OF AMORPHOUS HYDROGENATED SILICON-CARBIDE
Authors: IVANOVA NL FEOKTISTOV NA CHAIKA AN ONOKHOV AP PEVTSOV AB
Citation: Nl. Ivanova et al., OPTICALLY ADDRESSED SPATIAL LIGHT-MODULATOR WITH HIGHLY SENSITIVE LAYER OF AMORPHOUS HYDROGENATED SILICON-CARBIDE, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 282, 1996, pp. 315-322
USE OF AMORPHOUS HYDRATED SILICON-CARBIDE (A-SI-C-H) LAYERS IN SPACE-TIME LIGHT MODULATORS
Authors: IVANOVA NL MOROZOVA LE ONOKHOV AP PEVTSOV AB FEOKTISTOV NA
Citation: Nl. Ivanova et al., USE OF AMORPHOUS HYDRATED SILICON-CARBIDE (A-SI-C-H) LAYERS IN SPACE-TIME LIGHT MODULATORS, Pis'ma v Zurnal tehniceskoj fiziki, 22(4), 1996, pp. 7-11
NANOSCALE-CRYSTALLITE NUCLEATION AND GROWTH IN AMORPHOUS SOLIDS
Authors: PEVTSOV AB DAVYDOV VY FEOKTISTOV NA
Citation: Ab. Pevtsov et al., NANOSCALE-CRYSTALLITE NUCLEATION AND GROWTH IN AMORPHOUS SOLIDS, Physical review. B, Condensed matter, 52(2), 1995, pp. 955-966
AMORPHOUS SILICON-CARBON BASED P-I-N STRUCTURES FOR ELECTRON FLUX CONVERSION
Authors: FEOKTISTOV NA FLORINSKII VY MOROZOVA LE PEVTSOV AB
Citation: Na. Feoktistov et al., AMORPHOUS SILICON-CARBON BASED P-I-N STRUCTURES FOR ELECTRON FLUX CONVERSION, International journal of electronics, 78(3), 1995, pp. 533-538
ELECTROLUMINESCENCE IN A-SI1-XCX-H P-I-N STRUCTURES
Authors: PEVTSOV AB ZHERZDEV AV FEOKTISTOV NA JUSKA G MUSCHIK T SCHWARZ R
Citation: Ab. Pevtsov et al., ELECTROLUMINESCENCE IN A-SI1-XCX-H P-I-N STRUCTURES, International journal of electronics, 78(2), 1995, pp. 289-295
COLLECTION OF NONEQUILIBRIUM CARRIERS GENERATED IN A-SI H AND A-SI/C/H STRUCTURES BY AN ELECTRON-BEAM/
Authors: GOLUBEV VG MOROZOVA LE PEVTSOV AB FEOKTISTOV NA FLORINSKII VY
Citation: Vg. Golubev et al., COLLECTION OF NONEQUILIBRIUM CARRIERS GENERATED IN A-SI H AND A-SI/C/H STRUCTURES BY AN ELECTRON-BEAM/, Semiconductors, 28(3), 1994, pp. 274-277
MULTILAYERED SYSTEMS BASED ON A SICH-FILM S AS DIELECTRIC AND CONDUCTING OPTICAL MIRRORS AND FILTERS
Authors: FEOKTISTOV NA MOROZOVA LE
Citation: Na. Feoktistov et Le. Morozova, MULTILAYERED SYSTEMS BASED ON A SICH-FILM S AS DIELECTRIC AND CONDUCTING OPTICAL MIRRORS AND FILTERS, Pis'ma v Zurnal tehniceskoj fiziki, 20(5), 1994, pp. 12-16
SPECTRAL AND LOADING CHARACTERISTICS OF P -I-N TRANSDUCORS OF BETA-IRRADIATION ENERGY-BASED ON A-SIH
Authors: FLORINSKII VY FEOKTISTOV NA PEVTSOV AB KOSAREV AI VINOGRADOV AY PILATOV AG MOROZOV LE GOLOKOZ PP CHERVINSKII VN GANSHIN VM PETRENKO NS
Citation: Vy. Florinskii et al., SPECTRAL AND LOADING CHARACTERISTICS OF P -I-N TRANSDUCORS OF BETA-IRRADIATION ENERGY-BASED ON A-SIH, Pis'ma v Zurnal tehniceskoj fiziki, 19(16), 1993, pp. 23-27
Risultati: 1-17 |