Authors:
HART L
ASHWIN MJ
FEWSTER PF
ZHANG X
FAHY MR
NEWMAN RC
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Citation: P. Kidd et al., INTERPRETATION OF THE DIFFRACTION PROFILE RESULTING FROM STRAIN RELAXATION IN EPILAYERS, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 133-138
Citation: L. Hart et al., MEASUREMENT OF INTERFACE ROUGHNESS IN A SUPERLATTICE OF DELTA-BARRIERS OF AL IN GAAS USING HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 154-158
Citation: J. Birch et al., MEASUREMENT OF THE LATTICE-PARAMETERS IN THE INDIVIDUAL LAYERS OF SINGLE-CRYSTAL SUPERLATTICES, Journal of applied physics, 78(11), 1995, pp. 6562-6568
Citation: Jge. Klappe et Pf. Fewster, FITTING OF ROCKING CURVES FROM ION-IMPLANTED SEMICONDUCTORS, Journal of applied crystallography, 27, 1994, pp. 103-110
Citation: Pf. Fewster, STRUCTURAL CHARACTERIZATION OF MATERIALS BY COMBINING X-RAY-DIFFRACTION SPACE MAPPING AND TOPOGRAPHY, Philips journal of research, 47(3-5), 1993, pp. 235-245
Citation: Pf. Fewster et Nl. Andrew, DETERMINING THE LATTICE-RELAXATION IN SEMICONDUCTOR LAYER SYSTEMS BY X-RAY-DIFFRACTION, Journal of applied physics, 74(5), 1993, pp. 3121-3125
Citation: Pf. Fewster et Nl. Andrew, INTERPRETATION OF THE DIFFUSE-SCATTERING CLOSE TO BRAGG PEAKS BY X-RAY TOPOGRAPHY, Journal of applied crystallography, 26, 1993, pp. 812-819