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Results: 1-19 |
Results: 19

Authors: FEWSTER PF ANDREW NL
Citation: Pf. Fewster et Nl. Andrew, STRAIN ANALYSIS BY X-RAY-DIFFRACTION, Thin solid films, 319(1-2), 1998, pp. 1-8

Authors: FEWSTER PF
Citation: Pf. Fewster, RECIPROCAL SPACE MAPPING, Critical reviews in solid state and materials sciences, 22(2), 1997, pp. 69-110

Authors: FEWSTER PF
Citation: Pf. Fewster, X-RAY-ANALYSIS OF THIN-FILMS AND MULTILAYERS, Reports on progress in physics, 59(11), 1996, pp. 1339-1407

Authors: HART L ASHWIN MJ FEWSTER PF ZHANG X FAHY MR NEWMAN RC
Citation: L. Hart et al., SI DELTA-DOPING IN GAAS - INVESTIGATION OF THE DEGREE OF CONFINEMENT AND THE EFFECTS OF POSTGROWTH ANNEALING, Semiconductor science and technology, 10(1), 1995, pp. 32-40

Authors: FEWSTER PF ANDREW NL
Citation: Pf. Fewster et Nl. Andrew, APPLICATIONS OF MULTIPLE-CRYSTAL DIFFRACTOMETRY, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 97-103

Authors: KIDD P FEWSTER PF ANDREW NL
Citation: P. Kidd et al., INTERPRETATION OF THE DIFFRACTION PROFILE RESULTING FROM STRAIN RELAXATION IN EPILAYERS, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 133-138

Authors: HART L FEWSTER PF ASHWIN MJ FAHY MR NEWMAN RC
Citation: L. Hart et al., MEASUREMENT OF INTERFACE ROUGHNESS IN A SUPERLATTICE OF DELTA-BARRIERS OF AL IN GAAS USING HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 154-158

Authors: BIRCH J SUNDGREN JE FEWSTER PF
Citation: J. Birch et al., MEASUREMENT OF THE LATTICE-PARAMETERS IN THE INDIVIDUAL LAYERS OF SINGLE-CRYSTAL SUPERLATTICES, Journal of applied physics, 78(11), 1995, pp. 6562-6568

Authors: FEWSTER PF ANDREW NL
Citation: Pf. Fewster et Nl. Andrew, ABSOLUTE LATTICE-PARAMETER MEASUREMENT, Journal of applied crystallography, 28, 1995, pp. 451-458

Authors: FEWSTER PF
Citation: Pf. Fewster, THIN-LAYER DIFFRACTION, Journal de physique. III, 4(9), 1994, pp. 1533-1542

Authors: FEWSTER PF
Citation: Pf. Fewster, HIGH-RESOLUTION DIFFRACTION-SPACE MAPPING AND TOPOGRAPHY, Applied physics. A, Solids and surfaces, 58(3), 1994, pp. 121-127

Authors: KLAPPE JGE FEWSTER PF
Citation: Jge. Klappe et Pf. Fewster, FITTING OF ROCKING CURVES FROM ION-IMPLANTED SEMICONDUCTORS, Journal of applied crystallography, 27, 1994, pp. 103-110

Authors: DUNSTAN DJ KIDD P FEWSTER PF ANDREW NL GREY R DAVID JPR GONZALEZ L GONZALEZ Y SACEDON A GONZALEZSANZ F
Citation: Dj. Dunstan et al., PLASTIC RELAXATION OF METAMORPHIC SINGLE-LAYER AND MULTILAYER INGAAS GAAS STRUCTURES/, Applied physics letters, 65(7), 1994, pp. 839-841

Authors: FEWSTER PF
Citation: Pf. Fewster, X-RAY-DIFFRACTION FROM LOW-DIMENSIONAL STRUCTURES, Semiconductor science and technology, 8(11), 1993, pp. 1915-1934

Authors: FEWSTER PF
Citation: Pf. Fewster, STRUCTURAL CHARACTERIZATION OF MATERIALS BY COMBINING X-RAY-DIFFRACTION SPACE MAPPING AND TOPOGRAPHY, Philips journal of research, 47(3-5), 1993, pp. 235-245

Authors: FEWSTER PF
Citation: Pf. Fewster, CHARACTERIZATION OF QUANTUM-WELLS BY X-RAY-DIFFRACTION, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 142-145

Authors: FEWSTER PF ANDREW NL
Citation: Pf. Fewster et Nl. Andrew, DETERMINING THE LATTICE-RELAXATION IN SEMICONDUCTOR LAYER SYSTEMS BY X-RAY-DIFFRACTION, Journal of applied physics, 74(5), 1993, pp. 3121-3125

Authors: FEWSTER PF ANDREW NL
Citation: Pf. Fewster et Nl. Andrew, INTERPRETATION OF THE DIFFUSE-SCATTERING CLOSE TO BRAGG PEAKS BY X-RAY TOPOGRAPHY, Journal of applied crystallography, 26, 1993, pp. 812-819

Authors: HART L FAHY MR NEWMAN RC FEWSTER PF
Citation: L. Hart et al., X-RAY CHARACTERIZATION OF SI DELTA-DOPING IN GAAS, Applied physics letters, 62(18), 1993, pp. 2218-2220
Risultati: 1-19 |