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Results: 1-18 |
Results: 18
LIMITED POTENTIAL MODEL FOR UNSCREENED IONIZED IMPURITY SCATTERING INMULTIPLE-QUANTUM-WELL STRUCTURES
Authors: MAIMON S BAHIR G FINKMAN E SCHACHAM SE
Citation: S. Maimon et al., LIMITED POTENTIAL MODEL FOR UNSCREENED IONIZED IMPURITY SCATTERING INMULTIPLE-QUANTUM-WELL STRUCTURES, Superlattices and microstructures, 23(2), 1998, pp. 323-329
MEASUREMENT OF LASER ANNEALED SICGE BY NUCLEAR MICROPROBE ANALYSIS
Authors: CAMBPELL MM MAZHOORE N LEE KK JAMIESON DN FINKMAN E
Citation: Mm. Cambpell et al., MEASUREMENT OF LASER ANNEALED SICGE BY NUCLEAR MICROPROBE ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 415-420
STRAIN COMPENSATED INGAAS INGAP QUANTUM-WELL INFRARED DETECTOR FOR MIDWAVELENGTH BAND DETECTION/
Authors: MAIMON S COHEN GM FINKMAN E BAHIR G RITTER D SCHACHAM SE
Citation: S. Maimon et al., STRAIN COMPENSATED INGAAS INGAP QUANTUM-WELL INFRARED DETECTOR FOR MIDWAVELENGTH BAND DETECTION/, Applied physics letters, 73(6), 1998, pp. 800-802
INTERSUBLEVEL TRANSITIONS IN INAS GAAS QUANTUM DOTS INFRARED PHOTODETECTORS/
Authors: MAIMON S FINKMAN E BAHIR G SCHACHAM SE GARCIA JM PETROFF PM
Citation: S. Maimon et al., INTERSUBLEVEL TRANSITIONS IN INAS GAAS QUANTUM DOTS INFRARED PHOTODETECTORS/, Applied physics letters, 73(14), 1998, pp. 2003-2005
PHOTOLUMINESCENCE NONLINEARITIES IN MIXED-TYPE-I-TYPE-II QUANTUM-WELLHETEROSTRUCTURES
Authors: FINKMAN E PLANEL R
Citation: E. Finkman et R. Planel, PHOTOLUMINESCENCE NONLINEARITIES IN MIXED-TYPE-I-TYPE-II QUANTUM-WELLHETEROSTRUCTURES, Applied physics letters, 72(20), 1998, pp. 2604-2606
LOCAL STRAINS IN SI1-X-YGEXCY ALLOYS AS DEDUCED FROM VIBRATIONAL FREQUENCIES
Authors: FINKMAN E RUCKER H MEYER F PRAWER SD BOUCHIER D BOULMER J BODNAR S REGOLINI JL
Citation: E. Finkman et al., LOCAL STRAINS IN SI1-X-YGEXCY ALLOYS AS DEDUCED FROM VIBRATIONAL FREQUENCIES, Thin solid films, 294(1-2), 1997, pp. 118-121
RAMAN-SPECTROSCOPY OF SI1-X-YGEXCY LAYERS OBTAINED BY PULSED-LASER INDUCED EPITAXY
Authors: FINKMAN E BOULMER J BOUCAUD P GUEDJ C BOUCHIER D NUGENT K PRAWER S
Citation: E. Finkman et al., RAMAN-SPECTROSCOPY OF SI1-X-YGEXCY LAYERS OBTAINED BY PULSED-LASER INDUCED EPITAXY, Applied surface science, 106, 1996, pp. 171-178
SCHOTTKY DIODES ON SI1-X-YGEXCY ALLOYS - EFFECT OF THE C-INCORPORATION
Authors: MAMOR M MEYER F BOUCHIER D VIALARET G FINKMAN E BODNAR S REGOLINI JL
Citation: M. Mamor et al., SCHOTTKY DIODES ON SI1-X-YGEXCY ALLOYS - EFFECT OF THE C-INCORPORATION, Applied surface science, 102, 1996, pp. 134-137
MOBILITY MODULATION IN VERTICAL TRANSPORT OF HOT-ELECTRONS IN MULTI-QUANTUM-WELL STRUCTURES
Authors: MAIMON S SCHACHAM SE BAHIR G FINKMAN E RITTER D
Citation: S. Maimon et al., MOBILITY MODULATION IN VERTICAL TRANSPORT OF HOT-ELECTRONS IN MULTI-QUANTUM-WELL STRUCTURES, Physical review. B, Condensed matter, 54(8), 1996, pp. 5696-5699
GROWTH OF SI1-X-YGEXCY MULTIQUANTUM WELLS - STRUCTURAL AND OPTICAL-PROPERTIES
Authors: BOUCAUD P GUEDJ C JULIEN FH FINKMAN E BODNAR S REGOLINI JL
Citation: P. Boucaud et al., GROWTH OF SI1-X-YGEXCY MULTIQUANTUM WELLS - STRUCTURAL AND OPTICAL-PROPERTIES, Thin solid films, 278(1-2), 1996, pp. 114-117
X-GAMMA INDIRECT INTERSUBBAND TRANSITIONS IN TYPE-II GAAS ALAS SUPERLATTICES/
Authors: FENIGSTEIN A FINKMAN E BAHIR G SCHACHAM SE
Citation: A. Fenigstein et al., X-GAMMA INDIRECT INTERSUBBAND TRANSITIONS IN TYPE-II GAAS ALAS SUPERLATTICES/, Applied physics letters, 69(12), 1996, pp. 1758-1760
OPTICAL-PROPERTIES OF BULK AND MULTIQUANTUM-WELL SIGE-C HETEROSTRUCTURES
Authors: BOUCAUD P GUEDJ C BOUCHIER D JULIEN FH LOURTIOZ JM BODNAR S REGOLINI JL FINKMAN E
Citation: P. Boucaud et al., OPTICAL-PROPERTIES OF BULK AND MULTIQUANTUM-WELL SIGE-C HETEROSTRUCTURES, Journal of crystal growth, 157(1-4), 1995, pp. 410-413
REALIZATION OF SI1-X-YGEXCY SI HETEROSTRUCTURES BY PULSED-LASER INDUCED EPITAXY OF C+ IMPLANTED PSEUDOMORPHIC SIGE FILMS AND OF A-SIGEC-H FILMS DEPOSITED ON SI(100)/
Authors: BOULMER J BOUCAUD P GUEDJ C DEBARRE D BOUCHIER D FINKMAN E PRAWER S NUGENT K DESMURLARRE A GODET C CABARROCAS PRI
Citation: J. Boulmer et al., REALIZATION OF SI1-X-YGEXCY SI HETEROSTRUCTURES BY PULSED-LASER INDUCED EPITAXY OF C+ IMPLANTED PSEUDOMORPHIC SIGE FILMS AND OF A-SIGEC-H FILMS DEPOSITED ON SI(100)/, Journal of crystal growth, 157(1-4), 1995, pp. 436-441
CURRENT-INDUCED INTERSUBBAND ABSORPTION IN GAAS GAALAS QUANTUM-WELLS/
Authors: FENIGSTEIN A FRAENKEL A FINKMAN E BAHIR G SCHACHAM SE
Citation: A. Fenigstein et al., CURRENT-INDUCED INTERSUBBAND ABSORPTION IN GAAS GAALAS QUANTUM-WELLS/, Applied physics letters, 66(19), 1995, pp. 2513-2515
ATMOSPHERIC AND LOW-PRESSURE SHADOW MASKED MOVPE GROWTH OF INGAAS(P) INP AND (IN)GAAS/(AL)GAAS HETEROSTRUCTURES AND QUANTUM-WELLS/
Authors: COUDENYS G MOERMAN I VERMEIRE G VERMAERKE F ZHU Y VANDAELE P DEMEESTER P MAAYAN E ELSNER B SALZMAN J FINKMAN E
Citation: G. Coudenys et al., ATMOSPHERIC AND LOW-PRESSURE SHADOW MASKED MOVPE GROWTH OF INGAAS(P) INP AND (IN)GAAS/(AL)GAAS HETEROSTRUCTURES AND QUANTUM-WELLS/, Journal of electronic materials, 23(2), 1994, pp. 225-232
POLARIZATION DEPENDENCE OF SPECTRAL TRANSMISSION AND PHOTOCONDUCTIVE RESPONSE OF A P-DOPED MULTIPLE-QUANTUM-WELL STRUCTURE
Authors: FENIGSTEIN A FINKMAN E BAHIR G SCHACHAM SE
Citation: A. Fenigstein et al., POLARIZATION DEPENDENCE OF SPECTRAL TRANSMISSION AND PHOTOCONDUCTIVE RESPONSE OF A P-DOPED MULTIPLE-QUANTUM-WELL STRUCTURE, Journal of applied physics, 76(3), 1994, pp. 1998-2000
VERTICAL DRIFT MOBILITY OF EXCITED CARRIERS IN MULTIQUANTUM-WELL STRUCTURES
Authors: FRAENKEL A FINKMAN E MAIMON S BAHIR G
Citation: A. Fraenkel et al., VERTICAL DRIFT MOBILITY OF EXCITED CARRIERS IN MULTIQUANTUM-WELL STRUCTURES, Journal of applied physics, 75(7), 1994, pp. 3536-3543
ENHANCEMENT OF PHOTOLUMINESCENCE FROM DX CENTERS IN ALGAAS HETEROSTRUCTURES
Authors: LIVESCU G ASOM MT LUTHER L ZILKO JL TRAPP KDC FINKMAN E
Citation: G. Livescu et al., ENHANCEMENT OF PHOTOLUMINESCENCE FROM DX CENTERS IN ALGAAS HETEROSTRUCTURES, Applied physics letters, 62(16), 1993, pp. 1979-1981
Risultati: 1-18 |