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Results: 1-14 |
Results: 14
FAST HUMIDITY SENSOR USING OPTOELECTRONIC DETECTION ON PULSED PELTIERDEVICE
Authors: PASCALDELANNOY F SACKDA A GIANI A FOUCARAN A BOYER A
Citation: F. Pascaldelannoy et al., FAST HUMIDITY SENSOR USING OPTOELECTRONIC DETECTION ON PULSED PELTIERDEVICE, Sensors and actuators. A, Physical, 65(2-3), 1998, pp. 165-170
FLASH EVAPORATED LAYERS OF (BI2TE3-BI2SE3)(N) AND (BI2TE3-SB2TE3)(P)
Authors: FOUCARAN A SACKDA A GIANI A PASCALDELANNOY F BOYER A
Citation: A. Foucaran et al., FLASH EVAPORATED LAYERS OF (BI2TE3-BI2SE3)(N) AND (BI2TE3-SB2TE3)(P), Materials science & engineering. B, Solid-state materials for advanced technology, 52(2-3), 1998, pp. 154-161
MOCVD GROWTH OF BI2TE3 LAYERS USING DIETHYLTELLURIUM AS A PRECURSOR
Authors: GIANI A BOULOUZ A PASCALDELANNOY F FOUCARAN A BOYER A
Citation: A. Giani et al., MOCVD GROWTH OF BI2TE3 LAYERS USING DIETHYLTELLURIUM AS A PRECURSOR, Thin solid films, 315(1-2), 1998, pp. 99-103
THE USE OF EXPERIMENT CHARTS FOR THE FABRICATION OF POROUS SILICON
Authors: BENHIDA A ACHARGUI N COMBETTE P FOUCARAN A
Citation: A. Benhida et al., THE USE OF EXPERIMENT CHARTS FOR THE FABRICATION OF POROUS SILICON, Journal of crystal growth, 186(4), 1998, pp. 565-570
ELABORATION OF BI2TE3 BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: GIANI A PASCALDELANNOY F BOYER A FOUCARAN A GSCHWIND M ANCEY P
Citation: A. Giani et al., ELABORATION OF BI2TE3 BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 303(1-2), 1997, pp. 1-3
POROUS SILICON LAYERS USED FOR GAS SENSOR APPLICATIONS
Authors: FOUCARAN A PASCALDELANNOY F GIANI A SACKDA A COMBETTE P BOYER A
Citation: A. Foucaran et al., POROUS SILICON LAYERS USED FOR GAS SENSOR APPLICATIONS, Thin solid films, 297(1-2), 1997, pp. 317-320
A POSITRON-ANNIHILATION INVESTIGATION OF POROUS SILICON
Authors: DANNEFAER S KERR D CRAIGEN D BRETAGNON T TELIERCIO T FOUCARAN A
Citation: S. Dannefaer et al., A POSITRON-ANNIHILATION INVESTIGATION OF POROUS SILICON, Journal of applied physics, 79(12), 1996, pp. 9110-9117
POROUS SILICON MEMBRANES FOR GAS-SENSOR APPLICATIONS
Authors: TALIERCIO T DILHAN M MASSONE E FOUCARAN A GUE AM BRETAGNON T FRAISSE B MONTES L
Citation: T. Taliercio et al., POROUS SILICON MEMBRANES FOR GAS-SENSOR APPLICATIONS, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 43-46
ACOUSTIC MICROSCOPY INVESTIGATION OF POROUS SILICON
Authors: DAFONSECA RJM SAUREL JM FOUCARAN A MASSONE E TALIERCIO T CAMASSEL J
Citation: Rjm. Dafonseca et al., ACOUSTIC MICROSCOPY INVESTIGATION OF POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 155-158
POSITRON LIFETIME SPECTROSCOPY OF N-TYPE AND P-TYPE POROUS SILICON
Authors: DANNEFAER S BRETAGNON T FOUCARAN A TALIERCIO T KERR D
Citation: S. Dannefaer et al., POSITRON LIFETIME SPECTROSCOPY OF N-TYPE AND P-TYPE POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 171-173
REALIZATION OF POROUS SILICON MEMBRANES FOR GAS SENSOR APPLICATIONS
Authors: TALIERCIO T DILHAN M MASSONE E GUE AM FRAISSE B FOUCARAN A
Citation: T. Taliercio et al., REALIZATION OF POROUS SILICON MEMBRANES FOR GAS SENSOR APPLICATIONS, Thin solid films, 255(1-2), 1995, pp. 310-312
ACOUSTIC INVESTIGATION OF POROUS SILICON LAYERS
Authors: DAFONSECA RJM SAUREL JM FOUCARAN A CAMASSEL J MASSONE E TALIERCIO T BOUMAIZA Y
Citation: Rjm. Dafonseca et al., ACOUSTIC INVESTIGATION OF POROUS SILICON LAYERS, Journal of Materials Science, 30(1), 1995, pp. 35-39
ELASTIC CHARACTERIZATION OF POROUS SILICON BY ACOUSTIC MICROSCOPY
Authors: DAFONSECA RJM SAUREL JM DESPAUX G FOUCARAN A MASSONNE E TALIERCIO T LEFEBVRE P
Citation: Rjm. Dafonseca et al., ELASTIC CHARACTERIZATION OF POROUS SILICON BY ACOUSTIC MICROSCOPY, Superlattices and microstructures, 16(1), 1994, pp. 21-23
OPTICAL INVESTIGATION OF POROUS SILICON MEMBRANES
Authors: MASSONE E FOUCARAN A CAMASSEL J
Citation: E. Massone et al., OPTICAL INVESTIGATION OF POROUS SILICON MEMBRANES, Journal of luminescence, 57(1-6), 1993, pp. 51-55
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